• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.287-292
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• 1982

Nonohmic properties of ZnO ceramics with various small amounts of additives were studied in relation to experimental methods, additive contant and sintaring temperature. The kinds of additives used to following chemicals were basic additives ($0.5Bi_2O_3$, $0.3BaCO_3$, $0.5MnCO_3$, $0.5Cr_2O_3$, $0.1KNO_3$), $TiO_2$ and $Al(OH)_3$. Expecially, this study has focused on the effectsof $TiO_2$ and $Al(OH)_3$ in ZnO ceramics with the basic additives. SEM studies indicated that the addition of TiO2 promoted grain growth but retarded grain growth with the addition of $Al(OH)_3$. Also, in the case of calcination of ZnO with $TiO_2$ and ZnO with $Al(OH)_3$ previously, grain size of ZnO with $TiO_2$ was larger and that of ZnO with Al(OH)3 was smaller in comparison to the case with out calcination. From the viewpoint of nonohmic exponent and nonohimic resistance, electrical characteristics of ZnO, $TiO_2$ and the basic additives was more effective than that of ZnO, $Al(OH)_3$ and the basic additives. Nonohmic exponent and nonohmic resistance of ZnO, $TiO_2$ and the basic additives was 11-13 and 40-65 respectively.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.211-219
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• 1991

본 논문은 고주파에서의 Ni-Zn페라이트의 첨가물에 따른 소결특성에 관하여 연구한 것이다. 연구에서 사용한 시편은 20mol% NiO, 30mol% ZnO 및 50mol% Fe$_{2}$ $O_{3}$이 조성으로된 페라이트를 모재로 하고 첨가물로서 각각 0.0025mol%, 0.005mol% 및 0.001mol%의 비율로 Nb$_{2}$ $O_{5}$, Bi$_{2}$ $O_{3}$ 및 V$_{2}$ $O_{5}$를 첨가하였다. 그리고 소결을 1100.deg.C에서 이루어졌다. 초투자율은 V$_{2}$ $O_{2}$가 첨가된 시편의 100KHz-1000KHz주파수대에서 4*$10^{2}$~8*$10^{2}$의 높은 값을 얻었다. 손실계수는 100KHz~500KHz주파수대에서 1*10~3*$10^{-2}$이었다. 1/(.mu.*Q)값은 0.005mo;% Bi$_{2}$ $O_{3}$가 첨가된 시편에서 가장 높은 값을 나타내었다. 자기저항은 초유자율과 반비례의 관계를 나타내었다. 실험의 결과 첨가물에 의한 소결특성은 액상형성에 의하여 고른 입자성장을 확인할 수 있었다. 따라서 0.01mol% V$_{2}$ $O_{5}$를 첨가한 시편이 가장 우수한 자기특성을 나타내고 있음을 확인하였다.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1679-1681
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• 1996

ZnO varistor with composition of 89wt%-ZnO, 3.0wt%-$Bi_{2}O_{3}$, 3.6wt%-$Sb_{2}O_{3}$, 1.16wt%-CoO, 0.88wt%-NiO, 0.71wt%-$MnO_2$, 0.93wt%-$Cr_{2}O_{3}$, 0.013wt%-$Al_{2}O_{3}$ was fabricated by sintering methods. The effects of annealing on the J-E characteristics of ZnO varistors were investigated. These changes of electric properties were found to be caused by the variation of grains and grain boundary related to annealing. And the conductive mechanism and micostructure of ZnO varistor were researched using I-V meter, SEM and XRD.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.534-534
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• 2013

본 연구에서는 RF/DC 마그네트론 스퍼터링 시스템을 이용하여 co-sputtering 방법으로 TiO2와 ZnO를 이용하여 인버티드 유기태양전지용 버퍼층을 제작하고 TiO2와 ZnO의 함량에 따른 인버티드 유기 태양전지 특성을 비교하였다. Ti-Zn-O 버퍼층은 기존의 버퍼층 제작에 사용되던 용액 공정 대신 스퍼터링 시스템을 이용하여 제작하였다. ITO 전극 상부에 곧바로 Ti-Zn-O를 성막하여 Anode와 버퍼층이 일체화된 투명 전극을 제작하고 ZnO와 TiO2 함량이 유기 태양전지의 특성에 미치는 영향을 연구하였다. 버퍼층의 TiO2와 ZnO 함량에 따른 광학적, 구조적특성을 UV/Vis spectrometry와 X-ray diffraction (XRD), TEM 등으로 분석하였으며, Ti-Zn-O 박막의 실제 버퍼 층으로서의 적용 가능성을 알아보기 위해 인버티드 유기태양전지로 제작하여 그 특성을 평가하였다. 기존의 인버티드 유기태양전지의 특성이 fill factor of 55.58%, short circuit current of 8.33 mA/cm2, open circuit voltage of 0.66 V, efficiency 3.06%인데 반해 최적 조건의 Ti-Zn-O 버퍼층을 적용했을 경우 fill factor of 52.05%, short circuit current of 8.81 mA/cm2, open circuit voltage of 0.66 V, efficiency 3.03%인 우수한 유기태양전지의 특성을 보임으로써 스퍼터링 공법으로 제작된 Ti-Zn-O 박막의 인버티드 유기태양전지용 버퍼 층으로서의 적용 가능성을 확인하였다.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2440-2442
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.524-525
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• 2005

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $ZnO-B_2O_3-Bi_2O_3-SiO_2$, DTA, and XRD were used to characterize $ZnO-B_2O_3-Bi_2O_3-SiO$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA transformation point of $470^{\circ}C$, and firing condition of $540^{\circ}C$, 20min.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.286-293
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• 2002

Microstructure and the electrical porperties of a ZnO-based multilayered chip-type varistor(abbreviated as MLV) with Ag/Pd(7:3) inner electrode have been studied as a function of firing of temperature. At 1100$^{\circ}$C, inner electrode layers began to show nonuniform thickness and small voids, which resulted in significant disappearance of the electrode pattern and delamination at 1100$^{\circ}$C. MLVs fired at 950$^{\circ}$C showed large degradation in leakage current, probably due to incomplete redistribution of liquid and transition metal elements in pyrochlore phase decomposition. Those fired at 1100$^{\circ}$C and above, on the other hand, revealed poor varistor characteristics and their reproductibility, which are though to stem from the deformation of inner electrode pattern, the reaction between electrode materials and ZnO-based ceramics, and the volatilization of $Bi_2O_3$. Throughout the firing temperature range of 950∼1100$^{\circ}$C, capacitance and leakage current increased while breakdown voltage and peak current decreased with the increase of firing temperature, but nonlinear coefficient and clamping ratio kept almost constant at ∼30 and 1.4, respectively. In particular, those fired between 1000$^{\circ}$C and 1050$^{\circ}$C showed stable varistor characteristics with high reproducibility. It seems that Ag/Pd(7:3) alloy is one of the electrode materials applicable to most ZnO-based MLVs incorporating with $Bi_2O_3$ when cofired up to 1050$^{\circ}$C.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.345-347
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• 1995

ZnO varistor with composition of ZnO(90wt%)-$Bi_2O_3$(3wt%)-$Sb_2O_3$(3.61wt%)-$CO_2O_3$(1.16wt%)-NiO (0.88wt%)-$MnO_2$(0.71wt%)-$Cr_2O_3$(0.93wt%) according to $Al_2O_3$ addtive was fabricated by sintering methods. The optimal densification were established for the processing conditions of 8000 rpm 190$^{\circ}C$ spray drying and 1200$^{\circ}C$ 2hrs sintering. Then here investigated how additive compotions and processing variables affected the electrical and the phesical properties of these ZnO varistors.