• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.222-227
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• 2020

Pb(Zr,Ti)O₃(denoted as PZT) in the perovskite phase is used as a dielectric, piezoelectric, and super appetizer material owing to its ferroelectric properties. A PZT film was formed by an RF magnetron sputtering process by preparing a target composed of Pb_1.3(Zr_0.52Ti_0.48)O₃. The PZT film was formed by dividing the material into a mono-layer PZT produced continuously with the same sputtering power and a bi-layer PZT produced with two-stage sputtering power. The bi-layer PZT consisted of a lower layer produced under low-power sputtering conditions and an upper layer produced under the same conditions as the mono-layer PZT. XRD revealed small amounts of pyrochlore phase in the mono-layer PZT, but only the perovskite phase was detected in the bi-layer PZT. SEM and AFM revealed the upper part of the bi-layer PZT to be more compact and smooth. Moreover, the bi-layered PZT showed superior symmetry polarization and a significantly reduced leakage current of less than 1×10-5 A/cm². This phenomenon observed in bi-layer PZT was attributed to the induction of growth into a pure perovskite phase by suppressing the formation of a pyrochlore phase in the upper PZT layer where the densely formed lower PZT layer was produced sequentially.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.196-196
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• 2009

$Pb_1(Zr_x,\;Ti_{1-x})O_3$ (PZT)는 강유전체 기억소자(FRAM)와 초고감도 압전센서 등 다방면의 활용성으로 인해 신뢰성 높은 박막을 제조하기 위한 많은 연구가 진행되고 있다. 본 연구에서는 RF-magnetron Sputtering System을 이용하여 mono-layer PZT박막과 Bi-layer PZT박막을 제조하여 각 sample의 전기적 특성을 비교 하였으며, 그 결과 Bi-layer PZT박막이 더 우수한 전기적 특성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.198-199
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• 2002

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.212.1-212.1
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• 2009

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.76-76
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• 2009

PZT세라믹스는 높은 압전특성과 우수한 큐리온도($400^{\circ}C$)를 보유하고 있어 오래시간에 걸쳐 주목받고 있다. 현재 압전변압기, 액츄에이터, 센서등의 압전소자는 PZT를 이용하여 제작하고 있지만 PZT는 고온 소결시 PbO의 휘발이 환경오염을 초래하며 인체의 유해하다는 연구결과가 나왔다. 이에 최근에는 PbO가 포함 되지않은 무연(lead-free)계 압전세라믹스가 주목받고 있다. 무연 압전 세라믹스의 종류로는 Bi-layer-structured ceramics, Bi-perovskite type ceramics, NKN base ceramics 가 존재하고 있다. 그 중 $(Na_{0.5}K_{0.5})NbO_3(NKN)$ 세라믹스는 높은 큐리온도와($400^{\circ}C$)와 높은 전기기계 결합계수(약 36%)를 보유하고 있어 많은 연구가 이루어 지고 있다. 하지만 NKN은 PZT에 비하여 치밀성이 낮으며 일반적인 산화물 소결방법으로는 밀도를 높이기가 어려운 단점이 존재한다. 이를 개선하기 위한 방법으로 hot pressing와 spak plasma sintering, RTGG와 같은 방법으로 밀도를 높일수 있지만 비용이 많이 들어 일반적으로 사용이 어렵다. 다른 방법으로 NKN에 첨가물을 넣는 방법을 사용하고 있는데 방법으로 $LiNbO_3$, $LiTiO_3$, $LiSbO_5$를 첨가하여 개선하는 방법이 있다. 본 실험은 첨가물을 넣는 방식으로 비화학양론적 $(Na_{0.5}K_{0.5})_{0.97}(Nb_{0.9}Ta_{0.1})O_3(NKNT)$조성에 CuO를 mol%로 변화주어 유전 및 압전 특성을 조사하였다.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.