• 제목/요약/키워드: Bi-2201

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도가니를 이용해서 IBS법으로 제작한 Bi계 초전도 박막의 상안정 영역 (Phase Stability Region of Bi System Superconducting Thin films Fabricated by Ion Beam Sputtering Method with Crucible)

  • 양승호;김종서;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1204-1207
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    • 2003
  • BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cases, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.

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Bi 초전도 박막에서 단일상 형성을 위한 열역학 분석 (Analysis of Thermodynamics for Formation of Single Phase in Bi-superconducting Thin Films)

  • 천민우;박용필
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2002년도 춘계종합학술대회
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    • pp.623-626
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    • 2002
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, Tsub, and ozone gas pressures, pO$_3$. The correlation diagrams of the BSCCO phases with Tsub and pO$_3$are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputterina Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on Tsub and pO$_3$. From these results, the thermodynamic evaluation of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

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Bi 초전도 박막에서 단일상 형성을 위한 열역학 초건 분석 (Analysis of Thermodynamic Conditions for Formation of Single Phase in Bi-superconductor Thin Films)

  • 안준호;박용필;김정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.304-307
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    • 2001
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO Phases appeared against T7ub and PO3 are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable Phases depending on T$\sub$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

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Bi-sticking Coefficient of Bi-superconducting Thin Film Prepared by IBS Method

  • Lee, Hee-Kab;Lee, Joon-Ung;Park, Yong-Pil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.213-216
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    • 1999
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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이온빔 스퍼터법으로 제작한 Bi 박막의 초전도 특성 (Superconducting Characteristics of Bi Thin Films Fabricated by Ion Beam Sputtering)

  • 이희갑;박용필;오금곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.222-225
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    • 2000
  • BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $Po_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$ (onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a smd amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in d of the obtained films.

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Thermodynamics for Formation of Each Stable Single Phase in BSCCO Thin Films

  • Yang, Sung-Ho;Park, Yong-Pil;Kim, Gwi-Yeol
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2000년도 추계학술대회논문집
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    • pp.104-105
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    • 2000
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$_{sub}$, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO phases appeared against T$_{sub}$ and PO$_3$are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$_{sub}$ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS which are related with Gibbs'free energy change for single Bi2212 or Bi2223 phase are performed.ormed.i2212 or Bi2223 phase are performed.

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Thermodynamics for Formation of Each Stable Single Phase in Bi-superconductor Thin Films

  • Park, Yong-Pil;Kim, Gwi-Yeol
    • 한국전기전자재료학회논문지
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    • 제14권1호
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    • pp.64-68
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    • 2001
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\_$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO phases appeared against T$\_$sub/ and PO$_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$\_$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

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Phase Intergrowth in the Syntheses of Bi-superconducting Thin Films

  • Chun, Min-Woo;An, In-Soon;Park, Yong-Pil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.490-493
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    • 2002
  • Phase intergrowth some kinds of the Bi$_2$Sr$_2$Ca$\_$n-1/Cu$\_$n/O$\_$y/ phases is observed in the thin film fabrication at ultralow co-deposition with multi targets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis.

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Sticking Coefficient in Bi-thin Film Prepared by IBS Method

  • Yang, Sung-Ho;Park, Yong-Pil;Chun, Min-Woo;Park, Sung-Gyun;Park, Woon-Shik
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.193-197
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    • 2000
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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기판온도와 산화가스압에 따른 Bi-2212 초전도 박막의 단상막 형성에 관한 연구 (A Study on Formation of Single-phase Film in the Bi-2212 Superconducting Thin Films Substrate Temperature and Oxide Gas Pressures)

  • 양승호;이희갑;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.484-485
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    • 2007
  • BiSrCaCuO superconducting thin films have been fabricated by co-deposition using the faraday cup. Despite setting the composition of thin film Bi2212, Bi(2201, 2212, 2223) phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.

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