• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 춘계종합학술대회
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• pp.517-520
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• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.39-42
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• 2004

The $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the sputtering method was compared with the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the evaporation method. In doing the ultra-low deposition because each element can exist on the substrate surface, both the sputtering method and the evaporation method could easily fabricate single phase of the Bi2212 phase. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 한국초전도ㆍ저온공학회논문지
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• 제21권4호
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• pp.1-5
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• 2019

We investigated the effect of Fe₃O₄ addition on the critical temperature of (Bi, Pb)-2223 polycrystalline samples. Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_10+δ + x wt. % Fe₃O₄ (x = 0.0, 0.2, 0.4, 0.6, and 0.8) samples were prepared by using a solid-state reaction method. The analysis of X-ray diffraction data indicates that as Fe₃O₄ is added, dominant phase of the sample changes from Bi-2223 to Bi-2212 with an increasing Bi-2201 phase. The transition temperature of the samples drastically decreased with the Fe₃O₄ addition. The resistance data of samples with x = 0.2 and 0.4 showed a double transition indicating a coexistence of Bi-2223 and Bi-2212 phase while the samples with x = 0.6 and 0.8 showed a single transition with a semiconducting behavior. This phase transition may originate from changes in local structure of the Bi-2223 system by Fe₃O₄ addition. Analysis of the pair distribution function of the Cu-O pair in the CuO₂ plane calculated from extended X-ray absorption fine structure data revealed that the oxygen coordination of copper ion changes from CuO₄ planar type (x = 0.0 - 0.4) to CuO₅ pyramidal type (x = 0.6, 0.8). The correlated Debye-Waller factor, providing information on the atomic disorder within the CuO₂ plane, shows an inverse relation to the coordination number. These results indicate that addition of Fe₃O₄ changes the oxygen distribution around Cu in the CuO₂ plane, causing a phase transition from Bi-2223 to more stable Bi-2212/Bi-2201 phases.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 춘계종합학술대회
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• pp.623-626
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• 2002

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, Tsub, and ozone gas pressures, pO$_3$. The correlation diagrams of the BSCCO phases with Tsub and pO$_3$are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputterina Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on Tsub and pO$_3$. From these results, the thermodynamic evaluation of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.304-307
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• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO Phases appeared against T7ub and PO3 are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable Phases depending on T$\sub$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.64-68
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• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\_$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO phases appeared against T$\_$sub/ and PO$_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$\_$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• 한국정보통신학회논문지
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• 제11권1호
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• pp.89-94
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• 2007

다양한 기판 온도와 산화 가스 압력 하에서 i-beam 스퍼터링 법으로 BiSrCaCuO 박막을 제작하였다. 기판온도 $T_{sub}$와 산화 가스 압력 $pO_3$를 변화시키며 제작된 Bi2212 및 Bi2223 박막의 생성상도를 작성하였다. Bi2212 조성으로 스퍼터링 하였으나 Bi2212 상 뿐 아니라 Bi2201 상과 Bi2223 상이 모두 생성되었고, Bi2212나 Bi2223 단상은 매우 좁은 온도 영역에서만 형성되었다. 생성 엔탈피의 변화 ${\Delta}{\bar}HO_2$와 생성 엔트로피의 변화 ${\Delta}{\bar}SO_2$에 대한 열역학적인 계산을 통해 Bi2212 단상이 형성된 경우 각각 -260 kJ/mol 및 $-225J/mol{\cdot}K$의 값을 얻었다.

• 한국재료학회지
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• 제6권7호
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• pp.684-691
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• 1996

Bi-계 고온초전도체인 Bi2Sr2Ca2Cu3O10(Bi-2223)단일상을 반응시간을 줄이면서 합성하기 위하여 Bi-Sr-Ca-Cu-O계 내에 존재하는 Bi2Sr2Ca2Cu3O10(Bi-22o1), Bi2Sr2Ca2Cu3O10(Bi-2212), (Ca0.91Sr0.09)-CuO2의 혼합물, 특히 정확한 Bi1.7Pb0.4Sr2Ca2Cu3O10+x의 조성대신 (Ca0.91Sr0.09)CuO2가 많이 첨가된 조성의 혼합물에서 Bi-2223가 가장 쉽게 형성되었다. Bi-2223상은 86$0^{\circ}C$와 87$0^{\circ}C$에서 60시간 이내에 형성되었다. 소량의 Bi-2212상은 장시간의 반응후에도 여전히 존재하였다. 중간화합물을 이용한 합성방법이 통상의 소결방법에 비해 반응시간내에 소량의 불순물상들을 가진 Bi-2223상을 형성시킬 수 있다.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.425-433
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• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1071-1074
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• 2002

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.