• Title/Summary/Keyword: Bi 2201

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Electric Characteristics of Bi-2212 HTSC Tubes for Resistive SCFCL (저항형 한류기용 Bi-2212 고온초전도 튜브의 전기적 특성)

  • Lee, Nam-Il;Jang, Gun-Ik;Oh, Il-Sung;Park, Kwun-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.276-277
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    • 2005
  • 본 연구에서는 MCP법을 이용하여 Bi2212 초전도 튜브를 제작하고 공정 변수에 따른 초전도 튜브의 전기적 특성을 평가하였다. 초전도 분말은 $1100^{\circ}C$에서 용융하여 $300\sim500^{\circ}C$로 예열된 몰드 내에 주입하였으며 몰드는 1000 RPM으로 회전시켰다 제작된 초전도 튜브는 $840^{\circ}C$$O_2$ 분위기에서 72시간 열처리 하였다. SEM과 XRD 분석결과 튜브는 약 $40{\mu}m$의 크기를 갖는 Bi2212 초전도 상이 일정한 방향성을 갖으며 XRD 분석 결과 튜브 바깥부문에 Bi2201상이 존재하였다. 전기적 특성은 몰드 회전 속도가 증가할수록, 튜브의 두께가 증가할수록, 길이가 감소할수록 높은 $I_c$ 값을 나타내었으며, 이때 50 mm$\times$70 mm$\times$2.5 mm, 1000 RPM의 튜브에서 전기적 특성은 $I_c$=890 A, $T_c$= 80 K의 값을 나타내었다.

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Controlling the secondary phase of BSCCO 2223 tapes by thermal slide heat treatment(TSHT)

  • Park, Sung-Chang;Yoo, Jai-Moo;Ko, Jae-Woong;Kim, Young-Kuk;Kim, Cheol-Jin
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.1
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    • pp.40-43
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    • 2003
  • The phase transformation, variation of secondary phase, and critical current density $(J_c) for (Bi,Pb)_2Sr_2Ca_2Cu_3O_10 (2223)$ tapes have been studied through the thermal slide heat treatment (TSHT) process. This process consists of a multiple variations of oxygen partial pressures and temperatures at the initial heat treatment During the initial heat treatment some secondary phase such as $(Ca,Sr)_2CuO_3(2/1 AEC), (Ca,Sr)_{14}Cu_{24}O_{41} (14/24 AEC), and (Bi,Pb)_2Sr_2CuO_y$(2201, amorphous phase) farm in Bi-2223 tapes, especially at the 2223 grain boundaries. These secondary phases are detrimental to the phase transformation and final properties. In order to control the secondary phase in Bi-2223 tapes the amount and size of secondary phases among the TSHT process were observed. The results indicate that the amount and particle size of AEC particles were smaller when the TSHT process was used than when the normal process at the initial heat treatment was used which results in the improved $J_c$ properties after the final process.

Single Crystal Formation of BSCCO Thin Films by Epitaxy Growth (에피택시 성장으로 제작한 BSCCO 박막의 단결정 형성)

  • Cheon, Min-Woo;Yang, Sung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.671-674
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    • 2004
  • BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

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Characteristics of $B_2$Sr_2$$Ca_{n-1}$$Cu_n$$O_x$ Superconducting Thin Films Fabricated by Layer-by-Layer Deposition Method (Layer-by-Layer 증착법으로 제작한 $B_2$Sr_2$$Ca_{n-1}$$Cu_n$$O_x$초전도 박막의 특성)

  • 유선종;천민우;박용필
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.518-521
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    • 2003
  • Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.

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고온초전도 BSCCO 2223상 형성시 나타나는 여러 가지 이차상들이 선재의 임계전류에 미치는 영향(토요일)

  • 박성창;김철진;유재무;고재웅;김영국
    • Proceedings of the Korea Crystallographic Association Conference
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    • 2003.05a
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    • pp.24-24
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    • 2003
  • 고온초전도 BSCCO 2223 ((Bi, Pb)₂Sr₂Ca₂Cu₃O/sub x/) 선재의 특성을 향상시키기 위해서는 반복적인 인발 및 압연과정을 통한 texturing향상, BSCCO 2223입자의 배향성 증대, 피복재내 초전도체의 충진율(밀도)향상, 이차상의 부피분율 감소등이 이루어져야 한다. 최적 열처리 조건을 통하여 열처리 시에 형성되는 이차상인 (Bi,Pb)₂Sr₂CuO/sub y/ (2201, amorphous phase)를 조절하면서, (Ca,Sr)₂CuO₃ (2/1 AEC), (Ca,Sr)/sub 14/Cu/sub 24/O/sub 41/ (14/24 AEC)와 같은 이차상들의 부피분율 및 크기를 감소시켜야만 한다. 본 실험에서는 BSCCO 2223 선재의 특성을 향상시킬수 있는 최적의 열처리 조건 확립 및 기계적 공정시 나타나는 여러 가지 문제점을 개선하여 높은 임계전류를 가지는 선재의 특성을 분석하고자 하였다. 최종적으로 제조된 선재는 2223상 결정이 피복재(Ag)와 평행하게 길게 성장하며, AEC상의 크기와 부피분율이 감소할수록 더 높은 임계전류특성을 나타내었다(I/sub c/~70A, J/sub c/~42,000 A/㎠). 또한 이 선재에서 나타나는 여러 가지 이차상들을 분석하기 위하여 XRD, SEM, EDS 분석을 행하였다.

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Study on the deposition Characteristics of Bi Thin Film (Bi 박막의 성막 특성에 관한 연구)

  • Yang, Dong-Bok;Park, Yong-Pil;Lee, Hee-Kab
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.61-64
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    • 2003
  • This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. Mg(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $O_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

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Analysis of Stacking-Fault Proportion on the Mixed Phase of the $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) Superconducting Thin Films ($Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) 초전도 박막의 혼합상에 대한 고용비 해석)

  • Yang, Seung-Ho;Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.486-487
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    • 2007
  • $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

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Analysis of the Hi-system Superconducting Thin Films Fabricated by Layer-by-Layer Deposition Method at an Ultra low growth rate (초 저속 순차증착으로 제작한 Bi계 초전도 박막의 생성막 평가)

  • Yang, Seung-Ho;Kim, Young-Pyo;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.503-504
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    • 2007
  • $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2)superconducting thin films have been fabricated by atomic layer-by-layer deposition at an ultra low growth rate using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

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The effect of step heat treatment in the critical current density of BSCCO 2223 tapes (BSCCO 2223선재의 임계전류밀도에 영향을 미치는 단계별 열처리의 효과)

  • 박성창;유재무;고재웅;김영국;김철진
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.90-93
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    • 2002
  • The sintering process of BSCCO 2223 tapes is a complex process that is very sensitive to parameters, such as temperature, oxygen partial pressure, heating and cooling rate and holding time. During the first heat treatment, 2212 phase of precursor powder is partially transformed into 2223 phase and some residual secondary phases, such as $(Bi,Pb)_2$$Sr_2$CuO/sub y/(2201), $(Ca,Sr)_2$CuO/sub y/(2/1AEC), (Ca,Sr)/sub 14/Cu/sub 24/O/sub 41/(14/24 AEC) etc. The secondary phases are difficult to be removed from the BSCCO 2223 matrix on the heat treatment. These secondary phases degrade the critical current density. In order to minimize the amount and size of alkaline earth cuprate(AEC) particles step heat treatment is applied during the first heat treatment under the varying atmosphere. Experimental results showed that by adapting the step heat treatment process, the amount and particle size of the secondary phases in the final tapes are decreased. Consequently, the BSCCO 2223grain texture and Jc properties are improved.

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