• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.11
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• pp.748-754
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• 1999

Micromirrors supported by S-shape girders were fabricated and their angular deflections were measured using a laser-based system. A micromirror consists of a $50\mum\times50\mum$ aluminum plate, posts and an S-shape girder. Two electrodes were deposited on two corners of the substrate beneath the mirror plate. $50\times50$micromirror array were fabricated using the Al-MEMS process. The electrostatic force caused by the voltage difference between the mirror plate and one of the electrodes causes the mirror plate to tilt until the girder touches the substrate. Bial voltage of the mirror plate is between 25~35V and signal pulse voltage on both electrodes is $\pm5V$. A laser-based system capable of real-time two-dimensional angular deflection measurement of the micromirror was developed. The operation of the system is based on measuring the displacement of a HeNe laser beam reflecting off the micromirror. The resonant frequency of the micromirror is 50kHz when the girder touches the substrate and it is 25 when the micromirror goes back to flat position, since the moving mass is about twice of the former case. The measurement results also revealed that the micromirror slants to the other direction even after the girder touches the substrate.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.235-241
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• 1997

The crystallinity and the structure of heteroepitaxially grown $Y_2O_3$ films on the silicon substrates deposited by Ultra High Vacuum Ionized Cluster Beam(UHV-ICB) were investigated by Back-scattering Spectroscopy(BS)/channeling. The channeling minimum values, $X_{min}$, of the $Y_2O_3$ films deposited by other methods were 0.8~0.95 up to the present, which indicates amorphous or highly polycrystalline nature of the $Y_2O_3$ films. On the contrary, the channeling minimum value of heteroepitaxially grown $Y_2O_3$ films on Si(100) and Si(111) deposited by UHV-ICB are 0.28 and 0.25 respectively. These results point out fairly good crystalline quality. It is also observed that the top region of $Y_2O_3$ films have less crystalline defects than the bottom region regardless of the crystal direction of the Si substrates. The axis of $Y_2O_3$<111> epitaxially grown on Si(111) is tilt by $0.1^{\circ}$ with respect to Si<111>. That of $Y_2O_3$<110> on Si(100) is parallel to the Si<001>. The $Y_2O_3$ film on Si(100) grew with single domain structure and that on Si(111) grew with double domain structure. From the result of oxygen resonance BS/channeling, the oxygen atoms in heteroepitaxially grown $Y_2O_3$ film on Si(111) substrate have the crystallinity, but that on Si(100) shows almost channeling amorphous state.