• 제목/요약/키워드: BeO

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액체카드뮴음금용 세라믹 소재의 화학적 안정성 평가 (Chemical Stability Evaluation of Ceramic Materials for Liquid Cadmium Cathode)

  • 구광모;류홍열;김승현;김대영;황일순;심준보;이종현
    • 방사성폐기물학회지
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    • 제11권1호
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    • pp.23-29
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    • 2013
  • 경제적이고 우수한 핵확산저항성을 갖는 파이로공정의 핵심 단위공정인 전해제련 공정에서 U와 TRU를 동시에 회수하기 위해 환원전극으로써 LCC가 사용된다. 한가지 원소만을 회수하는 금속음극과는 달리 LCC는 전기화학적으로 U와 TRU의 선택적 분리가 어려워 핵확산저항성을 높이는 기술의 핵심이라고 할 수 있다. LCC를 담아놓는 LCC 도가니는 U나 TRU로만 전착되어야하기 때문에 도가니는 전기적으로 절연되어야 한다. LCC와의 안정성과 회수된 TRU 및 용융염과의 화학적 안전성은 물론 공정 중 전착될 수 있는 금속 Li과의 반응성도 고려되어야하므로 LCC 도가니의 소재 특성은 매우 중요하다. 본 연구에서는 $Al_2O_3$, MgO, $Y_2O_3$, BeO 네 가지 대체 세라믹 소재의 화학적 안정성을 $500^{\circ}C$에서 모의 LCC로 열역학적 및 실험적으로 평가하였다. 세라믹 기판 위의 LCC 접촉각은 화학적 반응성을 예측하기 위해 시간에 따라 측정하였다. $Al_2O_3$는 가장 낮은 화학적 안정성 갖고 BeO는 재료 내에 존재하는 기공은 접촉각감소에 영향을 주었다. MgO, $Y_2O_3$는 우수한 화학적 안정성을 나타내었다.

Thermal Evolution of BaO-CuO Flux as Sintering Aid for Proton Conducting Ceramic Fuel Cells

  • Biswas, Mridula;Hong, Jongsup;Kim, Hyoungchul;Son, Ji-Won;Lee, Jong-Ho;Kim, Byung-Kook;Lee, Hae-Weon;Yoon, Kyung Joong
    • 한국세라믹학회지
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    • 제53권5호
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    • pp.506-510
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    • 2016
  • The eutectic melt of BaO-CuO flux is known to be a potential sintering aid for $Ba(Zr,Y)O_3$ (BZY) electrolyte for proton-conducting ceramic fuel cells (PCFCs). A density of BZY higher than 97% of theoretical density can be achieved via sintering at $1300^{\circ}C$ for 2 h using a flux composed of 28 mol% BaO and 72 mol% CuO. In the present study, chemical and structural evolution of BaO-CuO flux throughout the sintering process was investigated. An intermediate holding step at $1100^{\circ}C$ leads to formation of various impurity compounds such as $BaCuO_{1.977}$, $Ba_{0.92}Cu_{1.06}O_{2.28}$ and $Cu_{16}O_{14.15}$, which exhibit significantly larger unit cell volumes than the matrix. The presence of such secondary compounds with large lattice mismatch can potentially lead to mechanical failure. On the other hand, direct heating to the final sintering temperature produced CuO and $Cu_2O$ as secondary phases, whose unit cell volumes are close to that of the matrix. Therefore, the final composition of the flux is strongly affected by the thermal history, and a proper sintering schedule should be used to obtain the desired properties of the final product.

Analytical characterization of O3 samples prepared for investigation of tropospheric heterogeneous reactions

  • Kim, Mihyeon;Park, Jong-Ho
    • 분석과학
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    • 제35권5호
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    • pp.212-217
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    • 2022
  • In this study, ozone (O3) samples were prepared for investigating the heterogeneous reactions between O3 and tropospheric aerosols and were characterized by spectroscopic methods. O3 generated from an ozone generator was purified by selective adsorption on refrigerated silica gel, followed by transfer to a sample bulb. The amount of UV light (λ = 256 nm) absorbed by O3 was measured as a function of time at two different temperatures (room temperature and 50 ℃) and under different irradiation conditions. A correlation plot of 1/[O3] versus time showed that O3 decomposition follows the 2nd order reaction rate under a steady-state approximation. The initial concentration of O3, observed rate constants (kobs), and the half-life of O3 in the sample stored at room temperature were determined to be 2.74 [±0.14] × 1016 molecules·cm-3, 4.47 [±0.64] × 10-23 molecules-1·cm3·s-1, and 9.5 [±1.4] days, respectively. The evaluation of O3 stability under various conditions indicated that special care should be taken to prevent the exposure of the O3 samples to hightemperature environment and/or UV radiation. This study established a protocol for the preparation of highly purified O3 samples and confirmed that the O3 samples can be stored for a day after preparation for further experiments.

스크린 프린팅 기법을 이용한 $SnO_2-Ag_2O-PtO_x$계 반도체식 마이크로 수소 가스센서에 관한 연구 (Semiconductor type micro gas sensor for $H_2$ detection using a $SnO_2-Ag_2O-PtO_x$ system by screen printing technique)

  • 김일진;한상도;이희덕;왕진석
    • 한국수소및신에너지학회논문집
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    • 제17권1호
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    • pp.69-74
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    • 2006
  • Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

$Bi_4Ti_3O_{12}{\cdot}nBaTiO_3(n=1&2)$ 박막에서 $Bi_4Ti_3O_{12}$ 에 대한 $BaTiO_3$의 복합효과 (The Complexing Effect of $BaTiO_3\;for\;Bi_4Ti_3O_{12}$ on Layered Perovskite $Bi_4Ti_3O_{12}{\cdot}nBaTiO_3(n=1&2)$ Thin Films)

  • 신정묵;고태경
    • 한국세라믹학회지
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    • 제35권11호
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    • pp.1130-1140
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    • 1998
  • Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

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유전성 glass-ceramics 제조에 관한 연구 (A study on the manufacture of dielectric glass-ceramics)

  • 이종근;박용완;이병하;현동석;이준영
    • 한국세라믹학회지
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    • 제19권4호
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    • pp.281-286
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    • 1982
  • The composition of glasses to be suitable for crystallisation of $BaTiO_3$ by heat-treatment and the dielectric properties of the glass-ceramics were investigated. The composition of the family of glasses was defined by the formula $\chi$ $BaTiO_3 + (100-$\chi$)Al_2O_3$.$2SiO_2$ and excess BaO. Data were presented on dielectric constant and loss tangent at various frequencies. The effects of excess BaO on dielectric properties were investigated. The additions of $Na_2O$ and $Nb_2O_5$ shifted the Curite temperature of these glass-ceramics. The glass composition which was able to be melted at 145$0^{\circ}C$ and moulded as homogeneous glass phase without devitrification should contain $Al_2O_3$.$2SiO_2$ more than 30 mole %. The more the amount of additive BaO increased, the more dielectric constant increased. When the maximum heat-treatment temperature was 105$0^{\circ}C$, we obtained higher dielectric constant than that of 95$0^{\circ}C$. The dielectric constant and the dielectric loss were stable at frequencies between 5$\times$104 and 107 cycle per second. When $Na_2O$ and $Nb_2O_5$ were added, the Curie temperature, presented at 14$0^{\circ}C$ to 15$0^{\circ}C$, shifted to lower temperature. Therefore, the glass-ceramics having high dielectric constant at room temperature were obtained.

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FBAR용 ZnO/SiO2Si 박막의 결정학적 특성에 관한 연구 (A Study or the Crystallographic Properties or ZnO/SiO2/Si Thin Film for FBAR)

  • 금민종;손인환;최명규;추순남;최형욱;신영화;김경환
    • 한국전기전자재료학회논문지
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    • 제16권8호
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    • pp.711-715
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    • 2003
  • In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

반도성 $BaTiO_3$ 세라믹스의 미세구조 및 PTCR 특성에 미치는 $MnO_2$ 첨가 효과 (Effect of $MnO_2$ Addition on the MIcrostructure and PTCR Characteristics in Semiconducting $BaTiO_3$ Ceramics)

  • 김준수;김홍수;백남석;이병하
    • 한국세라믹학회지
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    • 제32권5호
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    • pp.567-574
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    • 1995
  • The effect of MnO2 addition to 0.1mol% Sb2O3-doped BaTiO3 ceramics on microstructure and PTCR characteristics was studied. The PTCR characteristics was observed when 0.01 and 0.02 wt% MnO2 were added and sintered at 132$0^{\circ}C$ for 1 hour. The characteristics can be explained by the changes in the number and size of the abnormal grain growth due to the liquid phase during sintering. when the amount of MnO2 addition was 0.03 wt%, the sample showed NTCR characteristics with room-temperature resistivity over 109 Ωm regardless of the sintering temperature. This behavior can be described by the microstructure change due to the abnormal grain growth and charge compensation effect by MnO2 added. The room-temperature resistivity was increased as the amount of MnO2 was increased. And the specific resistivity ratio (pmax/pmin) showed maximum at 0.02wt% MnO2.

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SiC와 $ZrO_2$를 함유하는 ${Al_2}{O_3}$ 입자복합체의 균열저항거동: II. 이론적 분석 (R-Curve Behavior of Particulate Composites of ${Al_2}{O_3}$ Containing SiC and $ZrO_2$: II. Theoretical Analysis)

  • 나상웅;이재형
    • 한국세라믹학회지
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    • 제37권4호
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    • pp.368-375
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    • 2000
  • Fracture toughness of particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC was analysed theoretically. According to the suggested particle bridging model for obtaining the R-curve height, the crack extension resistance for the long crack was linearly proportional to the residual calmping stress at the interface between the second phase and the matrix. It was also a function of the particle size and the content. It was confirmed that the rising R-curve behavior of Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ was owing to the strong crack bridging by SiC particles. For Al2O3/ZrO2/SiC composites, the tensional stress from the 3${\mu}{\textrm}{m}$ SiC particles was large enough to activate the spontaneous transformation of the ZrO2. The crack extension resistance due to the particle bridging mechanism did not seem to be affected much by the coupled toughening, but its resultant toughness increase could be significantly smaller due to the dependency on the matrix toughness.

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$SiO_2$계의 Monte Carlo 시뮬레이션 (Monte Carlo Simulation of $SiO_2$ Systems)

  • 이종무
    • 한국세라믹학회지
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    • 제23권5호
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    • pp.47-54
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    • 1986
  • The structures of crystalline vitreous and liquid $SiO_2$ were Monte carlo simulated employing the potential energy function comprising Lennard-Jones 2-body and Axilrod-Teller 3-body potentials. Although the Si-O-Si angular distribution functions obtained in the simulation appear to be higher than the experimental results the other simulation results including SiO, O-O and Si-Si radial distribution functions and O-Si-O anglular distribution functions agree well with experimental data within acceptable limits. Themost important outcome in this study is that various $SiO_2$forms were successfully reproduced with the same potential energy function.

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