• Title/Summary/Keyword: Basic materials

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Improved Photolysis of Water from Ti Incorporated Double Perovskite Sr2FeNbO6 Lattice

  • Borse, P.H.;Cho, C.R.;Yu, S.M.;Yoon, J.H.;Hong, T.E.;Bae, J.S.;Jeong, E.D.;Kim, H.G.
    • Bulletin of the Korean Chemical Society
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    • v.33 no.10
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    • pp.3407-3412
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    • 2012

  • The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

  • https://doi.org/10.5012/bkcs.2012.33.10.3407 인용 PDF KSCI

Study of the Magnetic Properties on Py Films by Ferromagnetic Resonance Effect

  • Cho, Jae-Hun;Park, Seung-Young;Jo, Young-Hun;Yoon, Jung-Bum;Kim, Duck-Ho;You, Chun-Yeol
    • Proceedings of the Korean Magnestics Society Conference
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    • 2010.06a
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    • pp.108-109
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    • 2010

  • In summary, the FMR technique was applied to investigate the magnetic properties of Py thin films. Frequency dependence of the resonance field and line width was analyzed using Landau-Lifshitz-Gilbert equation.

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Device characterization and Fabrication Issues for Ferroelectric Gate Field Effect Transistor Device

  • Yu, Byoung-Gon;You, In-Kyu;Lee, Won-Jae;Ryu, Sang-Ouk;Kim, Kwi-Dong;Yoon, Sung-Min;Cho, Seong-Mok;Lee, Nam-Yeal;Shin, Woong-Chul
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.213-225
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    • 2002

  • Metal-Ferroelectric- Insulator- Silicon (MFIS) structured field effect transistor (FET) device was fabricated and characterized. Important issues to realize ferroelectric gate field effect transistor device were summarized in three sections. The choice of interlayer dielectric was made in the consideration of device functionality and chemical reaction between ferroelectric materials and silicon surface during fabrication process. Also, various ferroelectric thin film materials were taken into account to meet desired memory window and process compatibility. Finally, MFIS structured FET device was fabricated and important characteristics were discussed. For feasible integration of current device as random access memory array cell address schemes were also suggested.

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