• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.5
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• pp.786-793
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• 1987

This paper describes the design and fabrication of the polysilicon selfaligned bipolar transistor with 1.6\ulcorner epitaxy and SWAMI isolation technologies. This transistor has two levels of polysilicon. Also emitter and adjacent edge of polysilicon base contact of this PSA device are defined by the same mask, and emitter feature size is 2x4 \ulcorner. DC characteristic of the fabricated transistor was evaluated and analyzed for the SPICE input parameters. The minimum propagation delay time per gate of 330 ps at 1mW was obtained with 41 stage CML ring oscillator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.759-762
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• 2000

Present transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area, consequently have disadvantage for high speed switching performance. In this paper, a horizontal structure transistor which has minimized parasitic capacitance in virtue of SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics were designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance was proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed horizontal structure transistor was certified through the VCE-lC characteristics curve, $h_{FE}$ -IC characteristics, and GP-plot.

• Earthquakes and Structures
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• v.18 no.2
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• pp.215-222
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• 2020

In this paper, slit steel rubber bearing is presented as an innovative seismic isolator device. In this type of isolator, slit steel damper is an energy dissipation device. Its advantages in comparison with that of the lead rubber bearing are its simplicity in manufacturing process and replacement of its yielding parts. Also, slit steel rubber bearing has the same ability to dissipate energy with smaller value of displacement. Using finite element method in ABAQUS software, a parametric study is done on the performance of this bearing. Three different kinds of isolator with three different values of strut width, 9, 12 and 15 mm, three values of thickness, 4, 6 and 8 mm and two steel types with different yield stress are assessed. Effects of these parameters on the performance characteristics of slit steel rubber bearing are studied. It is shown that by decreasing the thickness and strut width and by selecting the material with lower yield stress, values of effective stiffness, energy dissipation capacity and lateral force in the isolator reduce but equivalent viscous damping is not affected significantly. Thus, by choosing appropriate values for thickness, strut width and slit steel damper yield stress, an isolator with the desired behavior can be achieved. Finally, the performance of an 8-storey frame with the proposed isolator is compared with the same frame equipped with LRB. Results show that SSRB is successful in base shear reduction of structure in a different way from LRB.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.31 no.4A
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• pp.303-309
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• 2011

Laminated rubber bearing is the most commonly used device for seismic base isolation of bridge structures. It is important to know performance and behavior characteristics of the laminated rubber bearings. The main evaluation factors of the rubber bearing are classified as compressive, shear and tensile behavior characteristics. The reference data of compressive and shear characteristics are rich, but the reference data of tensile characteristics is scarce. In this study, tensile test results of the rubber bearing with variation of shape factor and shear deformation are investigated for mechanical property. When tensile deformation in normal condition is increasing, tensile cycle behavior curve becomes non-linear and tensile breaking point is 300%. On the other hand, tensile breaking point is shear deformation condition is about 40%. Furthermore, when shape factor is lower, tensile breaking point is decrease. This results mean that tensile breaking point is decreased in triaxial tensile deformation because of cracks caused by internal void of the rubber bearings. This experimental data can be used as the reference data of tensile characteristics for designing seismic isolation of structures.

• ETRI Journal
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• v.27 no.5
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• Journal of the Earthquake Engineering Society of Korea
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• v.5 no.6
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• pp.1-10
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• 2001

In this study, the horizontal loading tests of 10ton and 200ton capacity of LRB(lead-rubber bearing) were performed for the evaluation of the dynamic properties of the LRB. It is noted from the test results that dynamic properties of the LRB are dependent on the loading frequency, vertical load and shear strain. A Slender bearing subjected to large deformation will tend to develop plastic hinges in the end regions of the lead plug which will cause the failure of the lead plug. It is recommended that the appropriate mechanical properties of LRB considering the level of structural response and input ground motion should be used in the design of base isolated structures.

• Earthquakes and Structures
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• v.9 no.5
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• pp.1029-1044
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• 2015

To investigate the seismic pounding response of long-span bridges with high-piers under strong ground motions, shaking table tests were performed on a 1/10-scaled bridge model consisting of three continuous spans with rigid frames and one simply-supported span. The seismic pounding responses of this bridge model under different earthquake excitations including the uniform excitation and the traveling wave excitations were experimentally studied. The influence of dampers to the seismic pounding effects at the expansion joints was analyzed through nonlinear dynamic analyses in this research. The seismic pounding effects obtained from numerical analyses of the bridge model are in favorable agreement with the experimental results. Seismic pounding effect of bridge superstructures is dependent on the structural dynamic properties of the adjacent spans and characteristics of ground motions. Moreover, supplemental damping can effectively mitigate pounding effects of the bridge superstructures, and reduce the base shear forces of the bridge piers.

• Journal of Korean Association for Spatial Structures
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• v.22 no.1
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• pp.25-32
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• 2022

The seismic behaviors of the arch structure vary according to the rise-span ratio of the arch structure. In this study, the rise-span ratio (H/L) of the example arch structure was set to 1/4, 1/6, and 1/8. And the installation angle of the seismic isolator was set to 15°, 30°, 45°, 60° and 90°. The installation angles of the seismic isolator were set by analyzing the horizontal and vertical reaction forces according to the rise-span ratio of the arch structure. Due to the geometrical and dynamic characteristics of the arch structure, the lower the rise-span ratio, the greater the horizontal reaction force of the static load, but the smaller the horizontal reaction force of the dynamic load. And if the seismic isolator is installed in the direction of the resultant force of the reaction forces caused by the seismic load, the horizontal seismic response becomes small. Also, as the installation angle of the seismic isolator increases, the hysteresis behavior of the seismic isolator shows a plastic behavior, and residual deformation appears even after the seismic load is removed. In the design of seismic isolators for seismic response control of large space structures such as arch structures, horizontal and vertical reaction forces should be considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.