• Journal of the Korean institute of surface engineering
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• v.33 no.5
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• pp.356-364
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• 2000

Factors that affect the hardness of the zinc electrodeposits in the sulfate electrolyte were investigated. The hardness of zinc deposit was enhanced by increasing the concentration of impurities such as iron and nickel in the bath that changed the crystallographic orientation of the zinc deposit from the strong basal plane to the random orientation. The increase of the concentration of sodium sulfate and current density in iron contained bath improved the hardness of zinc deposit because those were easily codeposited in zinc layer. However the increase of the concentration of sodium sulfate up to 80g/$\ell$ in the bath darkened the surface of zinc electrodeposits due to change of morphology by the codeposition of iron.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.1049-1051
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• 2000

A chromia-pillared clay has been prepared by ion exchange type intercalation reaction between the sodium ion in montmorillonite and the trimeric chromium oxyformate (TCF) ion, and by subsequent heat-treatment. The structural and thermal properties have been systematically studied by thermal analysis, powder XRD, IR spec-troscopy, and XAS. The gallery height of~6.8 $\AA$ upon intercalation of the TCF ion suggests that the $Cr_3O$ plane is parallel to the aluminosilicate layers. Even though the basal spacing of TCF intercalated clay decreases slightly upon heating, the layer structure was retained up to $550^{\circ}C$ as confirmed by XRD and TG/DTA. Ac-cording to the EXAFS spectroscopic analysis, it is identified that the (Cr-Cr) distance of 3.28 $\AA$ between vertex-linked CrO6 octahedra in TCF splits into 2.64 $\AA$, 2.98 $\AA$, and 3.77 $\AA$ due to the face-, edge-, and corner-shared CrO6 octahedra after heating at $400^{\circ}C$, implying that a nano-sized chromium oxide phase was stabilized within the interlayer space of clay.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.54-61
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• 1991

YBCO films deposited on MgO(100) and Si(100) by rf-magnetron sputtering using stoichiometric single target were annealed under oxygen atmosphere at $880^{\circ}C$ for 1 hr. The microstructure and superconducting properties of YBCO thin films depended on the composition of pre-annealed thin films. Basal planesuperconducting particles grown on MgO(100) substrate had small and rod-like shade due to preferred orientation, while superconducting film grown on the basal plane-superconducting particles showed round-shape particles. If pre-annealed thin film had nonstoichiometric composition, liquid phase was formed during the heat treatment, which made it easy for particles to grow in the preferred orientation and thus to form textured structure. But the thin films with the textured structure did not show good superconducting properties, especially $T_c$, since the liquid phase transformed into second phase in the grain boundary during the cooling. The effect of the second phase on $T_{c, \;zero}$ was greater than that on $T_{c, \;on}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.152-158
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• 2018

PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.1041-1043
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• 2000

We present the effects of temperature (between 10 K and 298 K) and of hole concentration on the frequency and intensity of characteristic phonons in polycrystalline $La_2CuO_4-related$ compounds using FT-IR spectros-copy. The influences of the concentration of carrier doped on the phonon modes are prominent in the IR spectra of $La_2CuO_4-related$ compounds. For $La_2-xSrxCuO_4({\chi}=$ 0.00, 0.03, 0.07, 0.10, and 0.15) and electrochemically (or chemically) oxidized $La_2CuO_4$, the intensities of the transverse oxygen mode around 680cm $-^1$ which cor-responds mainly to Cu-O(1) stretching vibration in the basal plane of CuO6 octahedron, are decreased and dis-appeared depending on the Sr-substitution rate and the amount of excess oxygen, while the longitudinal oxygen mode around 510 cm $-^1$ corresponding to the Cu-O(2) stretching in the basal plane of CuO6 octahedron are near-ly invariable. In particular, after two cycles of cooling-heating between 10 K and 298 K for these sample, the phonons around 680 cm $-^1$ are blue shif 13-15 cm $-^1$, while the phonons around 510 cm $-^1$ are nearly constant. The introduction of the charge carrier by doping would give rise to the small contraction of CuO6 oc-tahedron as Cu $^3+$ requires a smaller site than Cu $^2+$, which results in the shortening of the Cu-O(1) bond length and Cu-O(2) bond length with the increased La-O(2) bond length. These results in the frequency shift of the characteristic phonons. The IR spectra of $La_2Li0.5Cu0.5O_4$ which exhibits an insulator behavior despite the $Cu^3+$ of nearly 100%, corroborate our IR interpretations. The mode around 710 cm $-^1$ corresponding to Cu-O(1) stretching vibration is still strongly remained even at low temperature (10 K). Thus, we conclude that the con-duction electrons formed within $CuO_2$ planes of $La_2CuO_4-related$ superconductors screen more effectively the transverse oxygen breathing mode around 680 $cm-^1$ depending on the concentration of the doped charge carrier in $La_2CuO_4-related$ compounds, which might use as a superconductivity probe.

• Clean Technology
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• v.28 no.3
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• pp.249-257
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• 2022

The adsorption equilibria of nitrogen on a region of nanoporous carbonaceous adsorbent with local molecular orientation (LMO) were calculated by grand canonical Monte Carlo simulation at 77.16 K. Regions of LMO of identical size were arranged on a regular lattice with uniform spacing. Microporosity was predominately introduced to the model by removing successive out-of-plane domains from the regions of LMO and tilting pores were generated by tilting the basic structure units. This pore structure is a more realistic model than slit-shaped pores for studying adsorption in nanoporous carbon adsorbents. Their porosities, surface areas, and pore size distributions according to constrained nonlinear optimization were also reported. The adsorption in slit shaped pores was also reported for reference. In the slit shaped pores, a clear hysteresis loop was observed in pores of greater than 5 times the nitrogen molecule size, and in capillary condensation and reverse condensation, evaporation occurred immediately at one pressure. In the LMO pore model, three series of local condensations at the basal slip plane, armchair slip plane and interconnected channel were observed during adsorption at pore sizes greater than about 6 times the nitrogen molecular size. In the hysteresis loop, on the other hand, evaporation occurred at one or two pressures during desorption.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.162-167
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• 1999

GaN epilayers deposited by the OMVPE method on sapphires with 3 different surface orientations were investigated by TEM and their difference in mucrostructure were compared with each other. GaN epilayers were grown on the all three kinds of sapphire substrates; however, the best interfacial state and crystallinity were observed in the specimen using a {0001} substrate The density of defects in GaN epilayers on {0001} substrates was also less than others. No buffer layer was found at the interfaces of all the specimens; however, it was observed that the region which shows lattice distortion at the interface was only a few nonameter wide. Accordingly, TEM investigation revealed that GaN epilayers having some internal defects could be grown on sapphire {1120} and {1102} planes without a buffer layer, and the hetero-epitaxial GaN films were obtained from the specimen using {0001} substrates with the microstructural point of view.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3615-3620
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• 2013

Two novel copper(II) bromide complexes with pyridine containing Schiff base ligands, $Cu(pmed)Br_2$ and $Cu(pmed)Br_2$ where pmed = N'-((pyridin-2-yl)methylene)ethane-1,2-diamine (pmed) and dpmed = N,N-diethyl-N'-((pyridin-2-yl)methylene)ethane-1,2-diamine (dpmed) were synthesized and characterized using X-ray single crystal structure analysis, optical and magnetic susceptibility measurements. Crystal structural analysis of $Cu(pmed)Br_2$ showed that the copper(II) ion has a distorted square-pyramidal geometry with the trigonality index of ${\tau}=0.35$ and two intermolecular hydrogen bonds, which result in the formation of two dimensional networks in the ab plane. On the other hand, $Cu(pmed)Br_2$ displayed a near square-pyramidal geometry with the value of ${\tau}=0.06$. In both compounds, the NNN Schiff base and one Br atom occupy the basal plane, whereas the fifth apical position is occupied by the other Br atom at a greater Cu-Br apical distance. The reported complexes show $g_{\mid}$ > $g_{\perp}$ > 2.0023 with a $d_{x2-y2}$ ground state and a penta-coordinated square pyramidal geometry. Variable temperature magnetic susceptibility measurements showed that the developed copper(II) complexes follow the Curie-Weiss law, that is there are no magnetic interactions between the copper(II) ions since the Cu--Cu distance is too far for magnetic contact.