• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.91-94
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• 2003

We studied the effect of barrier rib height variation using ray-optics code incorporated with three-dimensional plasma simulation to analyze the effects of cell geometry for varying pressure conditions. The optimal barrier rib height decreased as the Xe partial pressure increased which resulted in due to the formation of local, strong sheath under high Xe partial pressure condition.

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.149-151
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• 1997

Barrier height on the surface was monitored at 77 K by observing the inflection of V-I characteristics of ZnO(1010)-ZnO(1010) contact in the surface reaction of oxygen species with carbon monoxide. The contact showed inflections at 10-20 mV and 10-50 mV for the sample adsorbed oxygen at 298 K and 573 K, respectively. When the sample adsorbed oxygen at 573 K was exposed to carbon monoxide at 298 K and 573 K, inflections were observed at 10-40 mV and 10-30 mV, respectively. The results indicated that the adsorption of oxygen on ZnO increased the surface barrier height, and the reaction of carbon monoxide with the oxygen-preadsorbed (at 573 K) ZnO decreased the surface barrier height.

• Wind and Structures
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• v.31 no.3
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• pp.185-196
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• 2020

A method to reduce the wind pressure at the leading edge of a noise barrier was investigated by gradually lowering the height of a member added to the end of the noise barrier. The shape of the lowered height of the added member was defined by its length and slope, and the optimal variable was determined in wind tunnel testing via the boundary-layer wind profile. The goal of the optimal shape was to reduce the wind pressure at the leading edge of the noise barrier to the level suggested in the Eurocode and to maintain the base-bending moment of the added member at the same level as the noise-barrier section. Using parametric wind tunnel investigation, an added member with a slope of 1:2 that protruded 1.2 times the height of the noise barrier was proposed. This added member is expected to simplify, or at least minimize, the types of column members required to equidistantly support both added members and noise barriers, which should thereby improve the safety and construction convenience of noise-barrier structures.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.151-155
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• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• Journal of IKEEE
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• v.26 no.2
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• pp.306-312
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• 2022

We investigated electrical properties and deep level traps in 4H-SiC merged PiN Schottky (MPS) diodes with different barrier heights by different PN ratios and metallization annealing temperatures. The barrier heights of MPS diodes were obtained in IV and CV characteristics. The leakage current increased with the lowering barrier height, resulting in 10 times larger current. Additionally, the deep level traps (Z_1/2 and RD_1/2) were revealed by deep level transient spectroscopy (DLTS) measurement in four MPS diodes. Based on DLTS results, the trap energy levels were found to be shallow level by 22~28% with lower barrier height It could confirm the dependence of the defect level and concentration determined by DLTS on the Schottky barrier height and may lead to incorrect results regarding deep level trap parameters with small barrier heights.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.30 no.6D
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• pp.605-613
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• 2010

In this study, Impact factors are represented and barrier height of compact car road of safety barrier is suggested through the investigation of applying problems of existed standard of general car road. For this, traffic accidents analysis is performed and based on the analysis, impact vehicle weight, impact Angle, crash velocity, and barrier height are investigated. For the decision of impact angle, analysis is carried out by comparison of RISER and 2-lines expressway accidents data. Through this, higher-impact angle is suggested. Vehicle weight data of sub-compact car, small vehicle, medium and large vehicle, SUV, small truck is surveyed and analyzed. Based on the accident accumulation rate, regression analysis of vehicle weight impact and impact velocity is performed. Also, based on the cumulative rate of vehicle weight on expressways near Seoul, barrier height of compact car road is calculated. It is noted that the results of this study will be contributed to the decision of barrier type.

• Journal of Information Display
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• v.10 no.4
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

• Journal of Information Display
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• v.2 no.4
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• pp.46-51
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• 2001

Using ray-optics code incorporated with three-dimensional PDP cell simulation, we have analysed the energy flow in the PDP cell from the electric power input to the visible light output. Also, the visible light output profile and viewing angle distribution were obtained. We applied our code to the analysis of the barrier rib height effect on the visible light luminance and efficiency of the sustaining discharge. Although cells with higher barrier rib generate more VUV photons, less ratio of visible photons are emitted toward front panel due to the shadow effect. Thus, there exists optimal barrier rib height giving the highest visible luminance and efficiency. This kind of code can be a powerful tool in designing cell geometry.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.209.2-209.2
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• 2015

Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.