• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.145-145
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• 2015

처음 유기물의 인광 발견 이후 Host-dopant 시스템을 이용하여 Emission layer(EML)을 Co-deopsition 하는 방법으로 주로 인광 유기 발광 다이오드를 제작 하였다. [1] co-deposition을 이용해 만든 유기 발광 다이오드에 많은 장점이 있지만, 반대로 소자를 제작하는데 있어서는 많은 문제점을 가지고 있다. [2-4] 이러한 문제점을 개선하기 위하여 co-deposition 대신 non-doped Multi Quantum Well(MQW) 구조를 사용하여 doping 하지 않는 방법을 이용하는 논문들이 보고 되고 있다. Hole, electron, exciton이 MQW 구조를 지나면서, dopant well 안에 갇히게 되고, 그 안에서 다른 layer 간에 energy transfer와, hole-electron leakage가 줄어 들어, 더 효율적인 유기 발광 다이오드를 만들 수 있게 된다. [5-7] 이 연구에서는 CBP를 Potential Barrier로 사용하고, Ir(ppy)3 (Green dopant), Ir(btp)2 (Red dopant) 를 각각 Potential Well로 사용하였고, 두께는 CBP 9nm, dopant 1nm로 하였다. 이러한 소자를 만들고 dopant를 3개의 well에 적당히 배치하여, 각 well에서의 실험적인 발광 량 과, EML 안에서의 발광 mechanism 그리고 각 potential barrier를 줄여가며 dexter, forster에 의한 energy transfer에 대하여 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.319-322
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• 2008

The viability of acetylene addition in each step of aromatic formation initiated by vinyl radical and acetylene also with its competition with structure rearrangement is investigated by determining optimal geometries and barrier and reaction energies using quantum mechanical methods. In principle, the addition reaction has more difficult in term of free energy and enthalpy compared to geometry arrangement. Under combustion conditions, i.e. T = 1200 K, acetylene addition is unfavorable mechanism as the barrier energy values rise much higher than that of geometry arrangement. However, in longer chain hydrocarbon case, e.g. n-CxHx+1 where x ³ 8, C-C bond rotation is rather difficult and requires high energy to form a ring structure, elongation chain is preferable.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1191-1198
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• 2023

Bentonite buffer material is a critical component in an engineered barrier system (EBS) for disposing high-level radioactive waste (HLW). The bentonite buffer material protects the disposal canister from groundwater penetration and releases decay heat to the surrounding rock mass; thus, it should possess high thermal conductivity, low hydraulic conductivity, and moderate swelling pressure to safely dispose the HLWs. Bentonite clay is a suitable buffer material because it satisfies the safety criteria. Several additives have been suggested as mixtures with bentonite to increase the thermal-hydraulic-mechanical-chemical (THMC) properties of bentonite buffer materials. Therefore, this study investigated the geotechnical, mineralogical, and THMC properties of several candidate additives such as sand, graphite, granite, and SiC powders. Datasets obtained in this study can be used to select adequate additives to improve the THMC properties of the buffer material.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.275-275
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.195.2-195.2
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.300.2-300.2
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• 2016

Increasing of the demand for energy savings for buildings, thermal barrier films have more attracted. In particular, as heat loss through the windows have been pointed out to major problems in the construction and automobile industries, the research is consistently conducted for improving the thermal blocking performance for windows. The main theory of the technology is reflect the infrared rays to help the cut off the inflow of the solar energy in summer and outflow of the heat from indoors in winter to save the energy on cooling and heating. Furthermore, this is well known for prevent glare, reduces fading caused by harmful ultraviolet radiation and easy to apply on constructed buildings if it made as a film. In addition to these advantages, apply the transparent electrode to eliminate condensation by heating. Generally ITO is used as a transparent electrode, but is has a low stability in environmental factors. In this study, ITO and its alternative, ATO, is deposited by sputtering system and then the characteristic is evaluated each material based thermal barrier thin film. The optical property was measured on wide range of wavelength (200 nm 2500 nm) to know the transparency in visible wavelength and reflectivity in IR wavelength range. The electrical property was judged by sheet resistivity. Finally the changes of the temperature and current of the deposited film was observed while applying a DC power.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.146-146
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• 2015

We report the enhanced performance of poly(N-vinylcarbozole) (PVK)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)-based quantum-dot light-emitting diodes by inserting the polyaniline:poly (p-styrenesulfonic acid) (PANI:PSS) interlayer. The QD-LED with PANI:PSS interlayer exhibited a higher luminance and luminous current efficiency than that without PANI:PSS. Ultraviolet photoelectron spectroscopy results exhibited different electronic energy alignments of QD-LEDs with/without the PANI:PSS interlayer. By inserting the PANI:PSS interlayer, the hole-injection barrier at the QD layer/PVK interface was reduced from 1.45 to 1.23 eV via the energy level down-shift of the PVK layer. The reduced barrier height alleviated the interface carrier charging responsible for the deterioration of the current and luminance efficiency. This suggests that the insertion of PANI:PSS interlayer in QD-LEDs contributed to (i) increase the p-type conductivity and (ii) reduce the hole barrier height of QDs/PVK, which are critical factors leading to improve the efficiency of QD-LEDs.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.206-209
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• 2006

At present, the cold cathode fluorescent lamp (CCFL) using mercury lamp has been generally used far liquid crystal backlight source of personal computer and car navigation and so on. This kind of lamp is more excellent on luminance performance and cost. However, the requirements of liquid crystal backlight due to a light source without mercury have been strongly increased from a viewpoint of the actual influence on environmental preservation and environmental recycling. As fluorescent lamp without mercury, Dielectric Barrier Discharge based rare gas fluorescent lamp (DBD-FL) using xenon (Xe) gas has been studied so far. This DBD lamp has no influence on the human body and environmental recycle. Its operating life is long because electrode is out. In this paper, the simulation and experimental results of soft switching high frequency inverter with reverse blocking single switch as a high frequency power supply circuit for DBD-FL using Xe gas are comparatively evaluated and discussed from a practical point of view.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.409-417
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• 2003

We have studied electrical properties and luminous efficiency of organic light-emitting diodes(OLEDs) with different buffer layer and cathodes in a temperature range of 10 K and 300 K. Four different device structures were made. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinato) aluminum(III) (Alq$_3$) as an electron transport and omissive layer, and poly(3,4-ethylenedioxythiophene) :poly (styrenesulfonate) (PEDOT:PSS ) as a buffer layer. And LiAl was used as a cathode. Among the devices, the ITO/PEDOT:PSS/TPD/Alq$_3$/LiAl structure has a low energy-barrier height for charge injection and show a good luminous efficiency. We have got a highly efficient and low-voltage operating device using the conductive PEDOT:PSS and low work-function LiAl. From current-voltage characteristics with temperature variation, conduction mechanisms are explained SCLC (space charge limited current) and tunneling one. We have also studied energy barrier height and luminous efficiency at various temperature.