• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.292-292
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• 2007

To apply PDP panel, Soda lime glass(SLG) is cheeper than Non-alkali glass and PD-200 glass but has problems such as low strain temperature and ion diffusion by alkali metal oxide. In this paper suggest the methode that prohibits ion diffusion by deposing barrier layer on SLG. Indium thin oxide(ITO) thin films and barrier layers were prepared on SLG substrate by Rf-magnetron sputtering. These films show a high electrical resistivity and rough uniformity as compared with PD-200 glass due to the alkali ion from the SLG on diffuse to the ITO film by the heat treatment. However these properties can be improved by introducing a barrier layer of $SiO_2\;or\;Al_2O_3$ between ITO film and SLG substrate. The characteristics of films were examined by the 4-point probe, SEM, UV-VIS spectrometer, and X-ray diffraction. GDS analysis confirmed that barrier layer inhibited Na and Ka ion diffusion from SLG. Especially ITO films deposited on the $Al_2O_3$ barrier layer had higher properties than those deposited on the $SiO_2$ barrier layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.179.2-179.2
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• 2014

Carbon nanotubes (CNT)-metal contacts play an important role in nanoelectronics applications such as field-effect transistor (FET) devices. Using Al and (10,0) CNT, we have recently showed that the CNT-metal contacts mediated via topological defects within CNT exhibits intrinsically low contact resistance, thanks to the preservation of the sp2 bonding network at the metal-CNT contacts.[1] It is well-established that metals with good wetting property such as Pd consistently yield good contacts to both metallic and semiconducting CNTs. In this work, the electronic and charge transport properties of the interfaces between capped CNT and Pd will be investigated based on first-principles computations and compared with previous results obtained for the Al electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.571-574
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• 2009

Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.2_1
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• pp.107-113
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• 2020

Additive manufacturing(AM) can create complex shapes directly in 3D CAD models with internal geometry compared to conventional subtraction manufacturing. AM technology has the advantage of adopting various materials as well as the reduction of material. However, the high cost of AM is still a significant barrier preventing the wider adoption of AM in industries. This paper analyzes the technical application cases for solving these entry barriers and proposes a bi-metal 3D printing technology as an anticipated application to overcome the difficulty. The paper investigates the complications for current 3D metal printing technology to conduct bi-metal 3D printing and addresses ongoing solution research based on laser technology.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.20 no.2
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• pp.191-198
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• 2010

The noise by the construction activities is one of the main issues in Korea. To prevent the noise from construction site, construction company installs temporary noise barriers along the construction site boundary. Normally sound insulation performance ($R_w$) of the temporary noise barriers made by metal or plastic is between 18 and 31 dB and metallic noise barriers are around 5 dB higher than plastic noise barriers. Sound absorption performance (NRC) of the temporary noise barriers are between 0.20 and 0.59 so it's difficult to characterize their acoustic performance. In this study, it has founded that sound insulation performance of the temporary noise barrier has been improved about 3dB by stick the high density acoustic sheet and insertion loss of noise barrier is getting increased as the source and receiver approached the temporary noise barriers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.458-458
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• 2012

Fuel Cell is used stacking metal or polymer substrate. This hydro property of substrate surface is very important. Usually, surface property is hydrophilic. The surface oxidation of SUS is investigated through plasma treatments with an atmospheric-pressure dielectric barrier discharge (DBD) for increasing hydrophilic property. The plasma process makes an experiment under various operating conditions of the DBD, which operating conditions are treatment time, plasma gas mixture ratio, the plasma source supply frequency. Two kinds of SUS substrate, SUS-304 and SUS 316L, were used. Discharge frequency has a crucial impact on equipment performance and gas treatment. After the plasma treatment of a SUS plate, highly improved wettability was noted. But, when high oxygen supply, the substrate damaged seriously.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.261-265
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• 2011

This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to $800^{\circ}C$. At annealing temperature of $600^{\circ}C$, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of $800^{\circ}C$ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at $200^{\circ}C$.

• International Journal of Advanced Culture Technology
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• v.8 no.2
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• pp.283-288
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• 2020

This study investigated the purification process of groundwater contaminated with zinc and arsenic using a permeable reactive barrier with a zero-valent iron/pumice mixture. We determined the removal rates of the contaminants for 30 days. In this study, column reactor filled with the zero-valent iron/pumice reactive mixture was used. Experimental results showed that the mixture exhibited an almost complete removal of the zinc and arsenic ions. Arsenic was removed via co-precipitation and adsorption processes while zinc ions were asorbed in active sites.The purification process of water from the metal ionscontinued for 30 days with constant hydraulic conductivity because of the enhanced porosity of the pumice and interparticle distance between the zero-valent iron and pumice. Contaminants removal rates and the remediation mechanism for each reactive system are described in this paper.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1763-1768
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• 2006

Low work function alkali metals and alkaline earths successfully lower the electron injection barrier and increase electron injection into the organic layer in OLED displays, but their implementation is not easy. AlkaMax technology can ensure the required metal evaporation rate in a fast, homogeneous and easily controllable way.