• Title/Summary/Keyword: Bairier $Si_3N_4$

Search Result 1, Processing Time 0.016 seconds

Tunneling Magnetoresistance of a Ramp-edge Type Junction With Si3N4 Barrier (Si3N4장벽층을 이용한 경사형 모서리 접합의 터널링 자기저항 특성)

  • Kim, Young-Ii;Hwang, Do-Guwn;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
    • /
    • v.12 no.6
    • /
    • pp.201-205
    • /
    • 2002
  • The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and +90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.