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Dependence of $O_2$ Plasma Treatment of ITO Electrode on Electrical and Optical Properties of Polymer Light Emitting Diodes (ITO 투명전극의 $O_2$ 플라즈마 처리가 고분자 유기발광다이오드의 전기.광학적 특성에 미치는 영향)

  • Gong, Su-Cheol;Back, In-Jea;Yoo, Jea-Huyk;Lim, Hun-Sung;Yang, Sin-Huyk;Shin, Sang-Bea;Shin, Ik-Seup;Chang, Gee-Keun;Chang, Ho-Jung
    • Journal of the Korean institute of surface engineering
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    • v.39 no.3
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    • pp.93-97
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    • 2006
  • Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

Fabrication and Evaluation of NMOS Devices (NMOS 소자의 제작 및 평가)

  • 이종덕
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.16 no.4
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    • pp.36-46
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    • 1979
  • Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

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Design of Compact and Broadband Quasi-Yagi Antenna Using Balance Analysis of the Balun (발룬의 평형도 해석을 이용한 소형화된 광대역 Quasi-Yagi 안테나 설계)

  • Woo, Dong Sik;Kim, In-Bok;Kim, Young-Gon;Kim, Kang Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.1
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    • pp.27-35
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    • 2013
  • In this paper, a compact, broadband quasi-Yagi antenna utilizing balance analysis of the ultra-wideband microstrip-to-coplanar stripline(MS-to-CPS) balun is proposed. The antenna size was reduced by removing the reflector on bottom layer and ground plane is used as a reflector. A planar balun that transforms from microstrip(MS) to balanced coplanar stripline(CPS) is characterized in the amplitude and phase imbalances at CPS output ports are investigated and discussed. As compared with the conventional balun, the proposed MS-to-CPS balun demonstrated very wideband performance from 7 to over 20 GHz. From the simulation study, amplitude and phase imbalances are within 1 dB and ${\pm}5^{\circ}$, respectively. The implemented antenna provides very wide bandwidth from 6.9 to 15.1 GHz(74.5 %). The gain of the antenna is from 3.7 to 5.5 dBi, the front-to-back ratio is more than 10 dB, and the nominal radiation efficiency is about 94 %.

Development of Neural Network Model for Estimation of Undrained Shear Strength of Korean Soft Soil Based on UU Triaxial Test and Piezocone Test Results (비압밀-비배수(UU) 삼축실험과 피에조콘 실험결과를 이용한 국내 연약지반의 비배수전단강도 추정 인공신경망 모델 개발)

  • Kim Young-Sang
    • Journal of the Korean Geotechnical Society
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    • v.21 no.8
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    • pp.73-84
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    • 2005
  • A three layered neural network model was developed using back propagation algorithm to estimate the UU undrained shear strength of Korean soft soil based on the database of actual undrained shear strengths and piezocone measurements compiled from 8 sites over the Korea. The developed model was validated by comparing model predictions with measured values about new piezocone data, which were not previously employed during development of model. Performance of the neural network model was also compared with conventional empirical methods. It was found that the number of neuron in hidden layer is different for the different combination of transfer functions of neural network models. However, all piezocone neural network models are successful in inferring a complex relationship between piezocone measurements and the undrained shear strength of Korean soft soils, which give relatively high coefficients of determination ranging from 0.69 to 0.72. Since neural network model has been generalized by self-learning from database of piezocone measurements and undrained shear strength over the various sites, the developed neural network models give more precise and generally reliable undrained shear strengths than empirical approaches which still need site specific calibration.

Comparison of Skin Injury Induced by β- and γ-irradiation in the Minipig Model

  • Kim, Joong-Sun;Jang, Hyosun;Bae, Min-Ji;Shim, Sehwan;Jang, Won-Seok;Lee, Sun-Joo;Park, Sunhoo;Lee, Seung-Sook
    • Journal of Radiation Protection and Research
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    • v.42 no.4
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    • pp.189-196
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    • 2017
  • Background: The effects of radiation on tissues vary depending on the radiation type. In this study, a minipig model was used to compare the effects of ${\beta}$-rays from $^{166}Ho$ and ${\gamma}$-rays from $^{60}Co$ on the skin. Materials and Methods: In this study, the detrimental effects of ${\beta}$- and ${\gamma}$-irradiation on the skin were assessed in minipigs. The histopathological changes in the skin from 1 to 12 weeks after exposure to 50 Gy of either ${\beta}$- (using $^{166}Ho$ patches) or ${\gamma}$- (using $^{60}Co$) irradiation were assessed. Results and Discussion: The skin irradiated by ${\beta}$-rays was shown to exhibit more severe skin injury than that irradiated by ${\gamma}$-rays at 1-3 weeks post-exposure; however, while the skin lesions caused by ${\beta}$-rays recovered after 8 weeks, the ${\gamma}$-irradiated skin lesions were not repaired after this time. The observed histopathological changes corresponded with gross appearance scores. Seven days post-irradiation, apoptotic cells in the basal layer were detected more frequently in ${\beta}$-irradiated skin than in ${\gamma}$-irradiated skin. The basal cell density and skin thickness gradually decreased until 4 weeks after ${\gamma}$- and ${\beta}$- irradiation. In ${\beta}$-irradiated skin lesions, and the density and thickness increased sharply back to control levels by 6-9 weeks. However, this was not the case in ${\gamma}$-irradiated skin lesions. In ${\gamma}$-irradiated skin, cyclooxygenase-2 (COX-2) was shown to be expressed in the epidermis, endothelial cells of vessels, and fibroblasts, while ${\beta}$-irradiated lesions exhibited COX-2 expression that was mostly limited to the epidermis. Conclusion: In this study, ${\beta}$-rays were shown to induce more severe skin injury than ${\gamma}$-rays; however, the ${\beta}$-rays-induced injury was largely repaired over time, while the ${\gamma}$-rays-induced injury was not repaired and instead progressed to necrosis. These findings reveal the differential effects of ${\gamma}$- and ${\beta}$-irradiation on skin and demonstrate the use of minipigs as a beneficial experimental model for studying irradiation-induced skin damage.

Effect of Cross-flow Velocity and TMP on Membrane Fouling in Thermophilic Anaerobic Membrane Bioreactor Treating Food Waste Leachate (음식물 침출수를 처리하는 막결합 고온혐기성 소화시스템에서 교차여과와 막간압력이 파울링에 미치는 영향)

  • Kim, Young-O;Jun, Duk-Woo;Yoon, Seong-Kyu;Chang, Chung-Hee;Bae, Jae-Ho;Yoo, Kwan-Sun;Kim, Jeong-Hwan
    • Membrane Journal
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    • v.21 no.4
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    • pp.360-366
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    • 2011
  • The effect of cross-flow velocity and transmembrane pressure (TMP) on membrane fouling was observed from pilot-scale operation of thermophilic anaerobic membrane bioreactor (AnMBR) treating food waste leachate. It was found that fouling rate was reduced significantly as cross-flow velocity increased at constant TMP mode of operation while this effectiveness was more pronounced at lower TMP. Higher TMP resulted in less permeable fouling layer possibly due to compressibility of foulant material on membrane surface. Particle sizes of membrane concentrate ranged from 10 to $100{\mu}m$, implying that shear-induced diffusion enhance back transport of these particle sizes away from the membrane effectively. From the continuous operation of AnMBR, it was confirmed that shear rate played an important role in the reduction of membrane fouling. Membrane autopsy works at the end of operation of AnMBR showed clearly that both organic and inorganic fouling were significant on membrane surface. Surface shear by cross-flow velocity was expected to be less effective to remove irreversible fouling which can be mainly caused by the adsorption of organic colloidal materials into membrane pores.

Cyclic Oxidation Behavior of Vacuum Plasma Sprayed NiCoCrAlY Overlay Coatings (진공 플라즈마 용사법을 통해 형성된 NiCoCrAlY 오버레이 코팅의 반복 산화 거동)

  • Yoo, Yeon Woo;Nam, Uk Hee;Park, Hunkwan;Park, Youngjin;Lee, Sunghun;Byon, Eungsun
    • Journal of the Korean institute of surface engineering
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    • v.52 no.6
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    • pp.283-288
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    • 2019
  • MCrAlY overaly coatings are used as oxidation barrier coatings to prevent degradation of the underlying substrate in high temperature and oxidizing environment of the hot section of gas turbines. Therefore, oxidation resistance in high temperature is important property of MCrAlY coatings. Also, coefficients of thermal expansion (CTE) of MCrAlY have middle value of that of Ni-based superalloys and oxides, which have the effect of preventing the delamination of the surface oxides. Cyclic oxidation test is one of the most useful methods for evaluating the high temperature durability of coatings used in gas turbines. In this study, NiCoCrAlY overlay coatings were formed on Inconel 792(IN 792) substrates by vacuum plasma spraying process. Vacuum plasma sprayed NiCoCrAlY coatings and IN 792 susbstrates were exposed to 1000℃ one-hour cyclic oxidation environment. NiCoCrAlY coatings showed lower weight gain in short-term oxidation. In long-term oxidation, IN 792 substrates showed higher weight loss due to delamination of surface oxide but NiCoCrAlY coatings showed lower weight loss. X-ray diffraction (XRD) analysis showed α-Al2O3 and NiCr2O4 was formed during the cyclic oxidation test. Through cross-section observation using scanning electron microscopy (SEM) and electron back scatter diffraction (EBSD) analysis, thermally grown oxide (TGO) layer composed of α-Al2O3 and NiCr2O4 was formed and the thickness of TGO increased during 1000℃ cyclic oxidation test. β phase in upper side of NiCoCrAlY coating was depleted due to oxidation of Al and outer beta depletion zone thickness also increased as the cyclic oxidation time increased.

Effects of the Thickness and the Morphology of a ZnO Buffer Layer in Inverted Organic Solar Cells

  • Lee, Hyeon-U;O, Jin-Yeong;Baek, Hong-Gu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.151-151
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    • 2013
  • 무기물 기반, Si-based 태양전지에 비해 가볍고 저렴하다는 관점에서 유기태양전지에 대한 연구가 진행되고 있다. 유기태양전지는 Si-based 태양전지에 비해 그 효율이 낮다는 점이 문제로 제기되어 왔지만, 억셉터와 도너의 nanocomposite 구조인 bulk-heterojunction (BHJ) 구조가 개발이 되면서 유기물의 짧은 엑시톤(exciton) 거리를 극복할 수 있게 되어 그 효율이 비약적으로 증가되는 결과를 낳았다. 또한 넓은 범위의 파장을 흡수 할 수 있는 작은 band-gap을 갖는 물질이 개발됨으로써 유기 태양전지의 효율은 점차 증가하고 있다. 최근에는 독일 회사인 Heliatek에서 12%가 넘는 유기태양전지를 발표함으로써 유기태양전지가 Si-based 태양전지를 대체할 수 있는 차세대 에너지 공급원으로의 가능성을 충분히 보였다. 이런 유기 태양전지는 하부 투명전극인 인듐주석산화물(ITO)/정공이동층(PEDOT:PSS)/광흡수층/전자이동층(LiF)/낮은 일함수를 갖는 상부전극인 Al 구조의 일반적인 구조; ITO/전자이동층/광흡수층/정공이동층/높은 일함수를 갖는 상부전극(Ag), 전하의 이동방향이 반대인 역구조 태양전지, 두 가지로 분류할 수 있다. 하지만 소자 안정성의 관점에서 일반적인 구조의 태양전지는 ITO/PEDOT:PSS 계면에서의 화학적 불안정성과, 낮을 일함수를 갖는 상부전극이 쉽게 산화되는 등의 문제가 있어 상부전극으로 높은 일함수를 갖는 전극을 사용하는 역구조 태양전지가 더 유리하다. 이러한 역구조 태양전지에서 효율을 높일 수 있는 요인 중 하나는 전자이동층에 있다. 광흡수층에서 형성되어 분리된 전자가 전극으로 이동하기위해서는 전자이동층을 거쳐야 한다. 하지만 이 전자이동층 내에서의 전자 이동속도가 느리다면, 즉 저항이 크다면 광흡수증과의 계면에서 Back electron trasnfer현상으로 재결합이 일어나게 되어 전극으로 도달하는 전자의 양이 줄어들게 되고, 이는 유기태양전지 효율을 낮추는 요인이 된다. 전자이동층 자체의 저항뿐만 아니라, 전자이동층의 표면 거칠기(morphology) 또한 유기 태양전지의 효율을 좌우하는 요인 중 하나이다. 광흡수층과 전자이동층의 계면에서 전자의 이동이 일어나는데, 전자이동층의 표면 거칠기가 크게되면 그 위에 박막으로 형성되는 광흡수층과의 계면저항이 증가하게 되고, 이는 광흡수층에서 전자이동층으로의 원활한 전자이동을 저해함으로써 소자 효율의 감소를 일으키게 된다. 따라서 우리는 전자이동층인 ZnO 박막의 스퍼터링 조건을 변화시킴으로써 ZnO 층의 두께에 따른 광투과도, 전기전도성 변화 및 유기태양전지의 효율변화와, 표면 거칠기에 따른 광변환 효율 변화를 관찰하고자 한다.

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Study of Tungsten Nitride Diffusion Barrier for Various Nitrogen Gas Flow Rate by Employing Nano-Mechanical Analysis (Nano-Mechanics 분석을 통한 질화 텅스텐 확산방지막의 질소 유량에 따른 연구)

  • Kwon, Ku Eun;Kim, Sung Joon;Kim, Soo In;Lee, Chang Woo
    • Journal of the Korean Vacuum Society
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    • v.22 no.4
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    • pp.188-192
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    • 2013
  • Many studies have been conducted for preventing from diffusion between silicon wafer and metallic thin film due to a decrease of line-width and multi-layer thin film for miniaturization and high integration of semiconductor. This paper has focused on the nano-mechanical property of diffusion barrier which sample is prepared for various gas flow rate of nitrogen with tungsten (W) base from 2.5 to 10 sccm. The deposition rate, resistivity and crystallographic properties were measured by a ${\beta}$-ray back-scattering spectroscopy, 4-point probe and x-ray diffraction (XRD), respectively. We also has investigated the nano-mechanical property using the nano-indenter. As a result, the surface hardness of W-N thin film was increased rapidly from 10.07 to 15.55 GPa when the nitrogen gas flow was increased from 2.5 to 5 sccm. And the surface hardness of W-N thin film had 12.65 and 12.77 GPa at the nitrogen gas flow of 7.5 and 10 sccm respectively. These results were decreased by the comparison with the W-N thin film at nitrogen gas flow of 5 sccm. It was inferred that these severe changes were caused by the stoichiometric difference between the crystalline and amorphous state in W-N thin film. In addition, these results were caused by increased compressive stress.

Liquid Phase Epitaxial Growth of GaAs on InP Substrates (액상에피택시 방법에 의한 InP기판상의 GaAs 이종접합 박막 성장)

  • Kim, Dong-Geun;Lee, Hyeong-Jong;Im, Gi-Yeong;Jang, Seong-Ju;Jang, Seong-Ju;Kim, Jong-Bin;Lee, Byeong-Taek
    • Korean Journal of Materials Research
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    • v.4 no.5
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    • pp.600-607
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    • 1994
  • Optimum exper~mental conditions were established for the growth of heteroepitaxial GaAs layers on InP using liquid phase epitaxy (LPE) technique. Results showed that the optimum growth temperature was $720^{\circ}C$ at a cooling rate of $0.5^{\circ}C$/min. Surface morphology of the grown layers significantly improved by addition of about 0.005wt% Se to the Ga growth melt, which effectively suppressed melt-back of InP substrates into the melt during the initial stage of growth. It was observed that the quality of GaAs layers also improved substantially when the substrates patterned with grating structure were used, as determined by the (400) double crystal X-ray diffraction. The transmission electron microscopy observation indicated t.hat the misfit dislocations interact with each other at the grating region, resulting in a lower dislocation density in the upper GaAs layer.

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