• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.304-304
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• 2010

최근 생활에 편리하며 휴대하기 좋은 전자기기들이 개발되고 있다. 휴대폰이나 MP3와 같은 전자기기들은 거의 필수품이라고 할 정도로 우리의 일상생활에 근접하여 있다. 그 종 대표적으로 휴대폰의 종류로 스마트폰과 같은 터치스크린을 이용한 사례는 점차 상승하고 있으며 시간이 지날수록 그 수요는 더욱 많아지고 있다. 때문에 몰입감 제공을 위하여 햅틱장치의 채용이 일반화 되고 있다. 햅틱장치란 가상환경이나 원거리에 있는 환경과 사용자가 상호 작용할 때 사용자에게 촉감이나 힘의 정보를 전달하여 주는 장치로 진동 및 회동 저항에 의해 사용자로 하여금 촉감들 느낄 수 있도록 하는 장치를 뜻한다. 즉, 현실감을 전달을 중점으로 하는 햅틱장치는 빠른 응답 속도와, 진동의 주파수와 크기는 독립적으로 제어가 가능해야 하며 기계적 수용기들을 직접적으로 자극할 수 있어야 한다. 하지만 모바일 햅틱장치의 경우 크기 및 소비전력의 문제로 모든 스펙을 만족하기에는 어려워 좀 더 한정적인 느낌을 제공할 수 없다. 현재까지 모바일 장치에서 햅틱 피드백을 위하여 진동모터나, 솔레노이드, 압전 액츄에이터 등이 많이 사용되어 지고 있다. 그 중 압전 액츄에이터는 입력에너지를 기계적 출력에너지로 변환되는 효과를 이용 한 것으로 압력 센서, 초음파 센서 등 많은 분야에서 응용되고 있으며 변위 범위는 작지만, 크기가 매우 작고 변위 정밀도가 높으며 발생력과 응답속도가 빠르다는 장점이 존재한다. 이를 이용한 햅틱 압전 엑츄에이터의 제작에 사용되는 압전 세라믹스는 높은 전기적 특성을 가질수록 더 졸은 효율을 가지며 이로 인하여 보다 좋은 전기적 특성을 가지는 압전 세라믹스를 필요로 한다. 현재 많이 사용되는 PZT계 세라믹스는 우수한 전기적 특성으로 많이 사용되고 있지만 Pb의 유독성으로 인한 환경문제로 Pb가 포함된 제품을 제한하고 있어 현재 Lead-free의 연구가 이루어지고 있다. Lead-free중 Ba$(Ti_{0.8}Zr_{0.2})O_3$(BZT)는 PZT계 세라믹스를 대체할 차세대 압전 재료로 주목받고 있다. 일반적으로 Lead-free의 압전계수($d_{33}$=100~300pC/N)는 비교적 낮은 값을 보이지만 BZT의 압전계수(BZT $d_{33}$~620pC/N)는 PZT계 세라믹스의 압전계수($d_{33}$=500~600pC/N)와 비교하여 부족하지 않은 압전계수를 보여주며 PZT를 대체할 재료로 주목받고 있다. 본 실험은 햅틱 압전 엑츄에이터용 무연 압전세라믹스의 제작을 위하여 Ba$(Ti_{0.8}Zr_{0.2})O_3-(Ba_{0.7}Ca_{0.3})-TiO_3$(BZT -BCT)의 조성으로 유전 및 압전 특성을 조사하였다.

• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.157-162
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• 2013

The need for lead-free piezoceramics has caused a renewal of interest in $BaTiO_3$-based systems. Recently, it was found that ceramics in the $(Ba,Ca)(Zr,Ti)O_3$ system have properties comparable to those of $Pb(Zr,Ti)O_3$. However, these ceramics require rather high sintering temperatures of $1450-1550^{\circ}C$. In this work, the effect of $TiO_2$ and CuO addition on the sintering behavior, microstructure, dielectric and piezoelectric properties of $(Ba_{0.85}Ca_{0.15})(Zr_{0.1}Ti_{0.9})O_3$ (BCTZ) ceramics will be discussed. BCTZ ceramics were prepared by the mixed oxide route and 1 mol % of $TiO_2$ or CuO was added. Undoped and doped ceramics were sintered at $1350^{\circ}C$ for 1-5 h. CuO was found to be a very effective sintering aid, with samples sintered for 1 h at $1350^{\circ}C$ having a bulk density of 95% theoretical density; however the piezoelectric properties were greatly reduced, probably due to the small grain size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.22-26
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• 2014

$(Ba_{0.85}Ca_{0.15})(Ti_{0.9}Zr_{0.1})O_3$ + 0.04 wt% $CeO_2$ lead-free ceramics were prepared by conventional oxide-mixed method and the effect of sintering temperature on microstructure, dielectric and piezoelectric properties were investigated. Improved piezoelectric properties have been observed at $1,400^{\circ}C$ sintering temperature which show the optimal electrical properties, $k_p{\sim}0.412$, $d_{33}{\sim}316pC/N$, $Q_m{\sim}144$, ${\varepsilon}_r{\sim}3,345$ and $T_c{\sim}85^{\circ}C$. These results show that the sintering temperature plays an important role in piezoelectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.651-655
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• 2013

$(Ba_{0.85}Ca_{0.15})(Ti_{0.9}Zr_{0.1})O_3$ + 0.04 wt% $CeO_2$ lead-free ceramics were synthesized by conventional sintering process and the effect of calcination temperature on microstructure, dielectric and piezoelectric properties were investigated. Improved piezoelectric properties have been observed at $1,125^{\circ}C$ calcination temperature which show the optimal electrical properties, $k_p$~0.457, $d_{33}$~367 pC/N, $Q_m$~158 and $T_c$~$85^{\circ}C$. These results show that the piezoelectric properties can be improved by appropriate calcination temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.297-297
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• 2008

Buffer layers play an important role in the development of high critical current density coated conductor. $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ buffer layers were compatible with MgO surfaces and also provide a good template for growing high current density REBCO(RE=Rare earth) films. Systematic studies on the influences of pulsed laser deposition parameters (deposition temperature, deposition pressure, processing gas, laser energy density, etc.) on microstructure and texture properties of $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ films as buffer layer deposited on ion-beam assisted deposition MgO (IBAD_MgO) template by pulse laser deposition method, were carried out. These results will be presented together with the discussion on the possible use of this material in HTS coated conductor as buffer.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.150-154
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• 2019

This study investigates the effect of MnO2 and CuO as acceptor additives on the microstructure and piezoelectric properties of $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$, which has a rhombohedral-tetragonal phase boundary composition. $MnO_2$ and CuO-added $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$ ceramics sintered at a relatively low temperature of $1020^{\circ}C$ show a pure perovskite phase with no secondary phase. As the addition of $MnO_2$ and CuO increases, the sintered density and grain size of the resulting ceramics increases. Due to the difference in the amount of oxygen vacancies produced by B-site substitution, Cu ion doping is more effective for uniform grain growth than Mn ion doping. The formation of oxygen vacancies due to B-site substitution of Cu or Mn ions results in a hardening effect via ferroelectric domain pinning, leading to a reduction in the piezoelectric charge coefficient and improvement of the mechanical quality factor. For the same amount of additive, the addition of CuO is more advantageous for obtaining a high mechanical quality factor than the addition of $MnO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.797-802
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• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.226-229
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• 2014

In this study, lead-free $(Ba_{0.85}Ca_{0.15})(Ti_{1-x}Zr_x)O_3$ ceramics and a bimorph-type piezoelectric actuator were fabricated using the normal oxide-mixed sintering method, and their dielectric properties, microstructure, and displacement properties were investigated. From the results of X-ray diffraction, the pattern of the specimen has a pure perovskite structure. In addition, no secondary impurity phases were found. The excellent piezoelectric coefficient of $d_{33}=454pC/N$, the electromechanical coupling factor $k_p=0.51$, the dielectric constant ${\varepsilon}_r=3,657$, the mechanical quality factor $Q_m=239$, and $T_c$(Tetragonal-Cubic) =$90^{\circ}C$ were shown at x= 0.085. ${\Delta}k_p/k_p20^{\circ}C$ and ${\Delta}f_r/f_r20^{\circ}C$ showed the maximum value of -0.255 and 0.111 at $-20^{\circ}C$ and $80^{\circ}C$, respectively. The maximum total-displacement was $60{\mu}m$ under the input voltage of 50 V. As a result, it is considered that lead-free $(Ba_{0.85}Ca_{0.15})(Ti_{1-x}Zr_x)O_3$ ceramics is a promising candidate for piezoelectric actuator application for x= 0.085.