• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.1
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• pp.1-6
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• 2000

In this paper, organic dispersion type back light EL(Electroluminescent) devices were manufactured using Ethyl hydroxy ethyl cellulose as organic binder, ZnS:Cu as phosphor powder and $BaTiO_3$ as dielectrics by screen printing method, which are focused on as a new light source. The properties of the fabricated organic dispersion type back light EL devices were showed $1.98[mA/\m^2]$ of current density, 0.075[W] of power consumption, 7.1[nF] of capacitance at $25[^{\circ}C]$, 100[V], 400[Hz], respectively. Also brightness of the fabricated device was revealed $20~110[cd/\m^2]$ at 50~150[V] and the change of color was shoed bluish green of x=0.1711, y=0.3676 which are color coordinate by CIE.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.87-87
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• 1999

본 연구에서는 Pulsed Laser Deposition(이하 PDL)방법을 이용하여 Si기판에 (Ba,Sr)TiO3(이하 BST)박막을 MFS-FET(Metal-Ferroelectric-Semiconductor Field-effect Transistor)구조로 제조하였으며 BST박막의 강유전성이 BST 박막에 유도되는 응력에 어떤 영향을 받는지 살펴보았다. 본 연구에서는 완충막을 사용함으로써 BST박막과 완충막간의 격자부정합을 이용하여 BST박막에 강유전성을 유도하려고 하였다. 또한 MFS-FET구조의 BST박막에 유도되는 응력조절을 위하여 BST박막과 완충막의 두께를 변화하였으며 XRD를 통한 구조 분석 및 C-V test를 통한 전기적 특성을 관찰을 하였다. PLD법을 통해서 epitaxial 성장된 BST 박막에서는 Si에 epitaxial 성장된 완충막과의 격자부정합에 의한 BST박막내의 자발분극의 발생이 예상된다. 따라서, 본 연구는 강유전체의 자발분극에 의하여 발생되는 C-V 이력현상이 BST박막과 완충막과의 격자부정합에 의한 응력에 의해 발생될 것으로 예상하여, BST 박막에 유도되는 응력과 C-V 이력현상의 관계를 통하여 상온에서 상유전성을 갖는 BST가 응력에 의하여 어느 정도의 강유전성을 나타내는지를 밝히기 위해 진행되었다. 본 연구에서 사용된 완충막은 YSZ(Yttria Stabilized Zirconia)박막으로 0.4mTorrO2 분위기 하에서 600~80$0^{\circ}C$의 온도에서 증착하여 상형성을 살펴보았고 $700^{\circ}C$에서 epitaxial 성장을 확인하였으며 두께는 30~$\AA$으로 변화하였다. 또한 BST박막은 완충막과의 전압분배를 고려해 300~2000$\AA$으로 두께를 변화를 시키며 증착하였다. MFS 구조에서 Al 전극을 사용하여 완충막과 BST박막간의 두께 변화에 따른 Capacitance - Voltage(C-V) 측정을 하였으며 이를 통하여 강유전상의 특성인 C-V 이력현상을 관찰하였다. 그 결과 YSZ 박막에서는 C-V 이력현상이 나타나지 않았으며 BST 박막에서는 약 1.2V의 C-V이력현상이 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.171-174
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• 2002

The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.755-759
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• 2008

For the development of a new white dielectric layer in plasma display panel, different $TiO_2$ types as a filler was add to the $Bi_2O_3$-BaO-ZnO glass matrix. The reflectance and dielectric constant of dielectric have been investigated as a function of the mixing content (rutile and anatase), and sintering temperature. The reflectance of dielectric sintered at the 520$^{\circ}C$ appeared most highly and suitable in terms of the adhesion and reflectance of the soda-lime glasses. Also, the thermal expansion coefficient of dielectric was found to be $85.6\times10^{-7}/K$, which was similar to that of the soda-lime glasses. Especially, the dielectric constants were not increased with increasing of $TiO_2$ filler contents.

• Journal of Information Display
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• v.2 no.3
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• pp.39-43
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• 2001

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.993-996
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• 2001

In the composition of 0.16BaO-0.15(Nd$\_$0.87/,Bi$\_$0.13/)$_2$O$_3$-0.69TiO$_2$$.$Glass [EG-2782] 3wt% addition sintered at 1080$^{\circ}C$, we could obtained microwave properties of dielectric constant $\varepsilon$$\_$r/= 80.1, quality factor Q ${\times}$ f = 810 (at 3.5 GHz]) and temperature coefficient of resonant frequency $\tau$$\_$f/ = -1.3 [ppm/$^{\circ}C$]

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.3-9
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• 1999

The grain morphology, the changes in morphology and Jc with the thermo-mechanical treatment (TMT) history, the field dependence of Jc and the nature of intergranular bonding were studied in $T_{10.8}$$Pb_{.2}$$Bi_{0.2}$$Sr_{1.8}$$Ba_{0.2}$$Ca_{2.2}$$Cu_{3}$$O_{z}$/Ag tapes. As a result, incorporation of intermediate rolling during the final heat-treatment resulted in of plate-like TI-1223 grains, and thus enhanced Jc. Jc's near 2.5$\times$104 A/cm2 at 77 K and 0 T were obtained in just rolled tapes with an excellent reproducibility. The high Jc's seem to grain-connectivity easy recovery of excellent grain-connectivity during final heat-treatment after inter -mediate rolling, probably due to retarded T1 evaporation and excessive Ca content in the present composition. The strong field dependence of Jc even in low fields, however, indicated that there still existed significant weak-links and the degree of directional grain-alignment was far from the desired one. The intergranular binding in the tapes seemed to be mainly dominated by SIS junctions.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.95-101
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• 1990

Parallel optical arithmetic techniques have been developed using the correlation property of optical phase conjugate wave generated by degenerated four wave-mixing. In this paper, conventional rectangular-type coded pattern used for optical logic system is replaced by circular one for effective beam coupling in a photorefractive $BaTiO_3$ material. By adequately adjusting the distance between circular-type pixels of the input pattern and grouping the correlated output, optical binary half addition/subtraction, binary multiplication and, matrix-matrix computation are demonstrated.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.137-137
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.171.1-171.1
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• 2009