• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.46-46
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• 2002

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.15-17
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• 2005

In this study, tunable dielectric materials are important for resonator, variable capacitor, phased array antenna and other devices application. In this paper, Dielectric constant increased and tuning range increased with the increased of $BaSrTiO_3/Li_{2}CO_{3}$ content, which probably can be explained by the substitution of Ba3+, Li1+ on BaTiO3 lattice. The tunability and dielectric loss of the $BaSrTiO_2/Li_{2}CO_{3}$ thick film, sintered at $1150^{\circ}C$, were about 43 % and 0.234 at 10$\sim$15 MHz, respectively. In case of BaSrTi/MgO, Dielectric constant decreased and tenability increased with the added of $BaSrTiO_3/MgO$. The ferroelectrics properties were distinct when adding Li to BST ceramic thick film, and paraelectrics pattern was distinct when adding Mg.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.30-39
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• 2000

The variation of electrical properties of (Ba, Sr)TiO$_3$[BST] thin films deposited of RuO$_2$electrode with (Ba+Sr)/Tr ration was investigated. BST thin films with various (Ba+Sr)/Tr ration were deposited on RuO$_2$/Si substrates using in-situ RF magnetron sputtering. It was found that the electrical properties of BST films depends on the composition in the film. The dielectric constant of the BST films is about 190 at the (Ba+Sr)/Tr ration of 1.0, 1,025 and does not change markedly. But , the dielectric constant degraded to 145 as the (Ba+Sr)/Tr ratio increase to 1.0. In particular, the leakage current mechanism of the films shows the strong dependence on the (Ba+Sr)/Tr ration in the films. At the ration (Ba+Sr)/Tr=1,025, the Al/BST/RuO$_2$ capacitor show the most asymmetric behavior in the leakage current density, vs, electric field plot. It is considered that the leakage current of the (Ba+Sr)/Tr=1,025 thin films is controlled by the battier-Iimited process, i,e, Schottky emission.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.638-642
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• 2010

The spinel material $Li_4Ti_5O_{12}$ has attracted considerable attention as an anode electrode material for many battery applications owing to its light weight and high energy density. However, the real capacity of $Li_4Ti_5O_{12}$ powder as determined by the solid-state method is lower than the ideal capacity. In this study, we investigated the effect of the dopants in M-doped spinel $Ba_xLi_{4-2x}Ti_5O_{12}$(x=0.005, 0.05, 0.1) powders prepared by the solid-state reaction method and used as the anode material in lithiumion batteries. The results confirmed the effect of the Ba and Sr dopants on the powder properties of the spinel $Li_4Ti_5O_{12}$, which exhibited a pure spinel structure without any secondary phase in its XRD pattern. Moreover, the electrochemical properties of the spinel M-LTO materials were investigated using a half cell. The electrochemical data show that cells with anodes made of undoped $Li_4Ti_5O_{12}$ and Ba- and Sr-doped $Li_4Ti_5O_{12}$ have discharge capacities of 97, 130, and 112 mAh/g, respectively, at the first cycle. Moreover, the Ba- and Sr-doped spinel $Li_4Ti_5O_{12}$ demonstrated good properties in the mid-voltage range at 1.55 V, showing stable cyclic voltammogram properties which surpassed those of the same material without Ba or Sr at 1 C after 100 cycles.

• Applied Chemistry for Engineering
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• v.3 no.3
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• pp.412-421
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• 1992

The superconducting thin films have shown a growing possibility for practical application in microelectronic fields in recent years. In this study, the high Tc superconducting Y-Ba-Cu-O thin films were prepared on various substrates by chemical vapor deposition method using organic metal chelates of $Y(thd)_3$, $Ba(thd)_2$, and $Cu(thd)_2$ as source materials. The deposition reactions were carried out on single crystalline MgO(100), YSZ(100), $SrTiO_3(100)$, and polycrystalline $SrTiO_3$ substrates. Deposition thickness of thin films was linearly increased with the increase of deposition time. It turned out that the Y-Ba-Cu-O thin films on MgO(100), YSZ(100), and $SrTiO_3(100)$ single crystal substrates showed superconductivities above liquid nitrogen temperature($T_{c,onset}=87{\sim}89K$, $T_{c,zero}=85{\sim}86K$), but the one on polycrystalline $SrTiO_3$ substrate did not.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.370-374
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• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.217-220
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• 1997

(Ba,Sr)TiO$_3$ thin film capacitors were prepared on SiO$_3$/Si(100)wafer by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Microstructural properties of (Ba,Sr)TiO$_3$ thin films were investigated by the SEM, XRD. The thickness and grain size were studied for the varying of RF power and temperature.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1432-1433
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• 2006

$Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were fabrication by sol-gel method. Sintering temperature must be suited to the LTCC technology. Structure and dielectric properties were investigated for effect of $Li_{2}CO_3$ dopants at BST. Structure of $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were dense and homogeneous with almost no pore. Relative permittivity was decreased and dielectric loss was increased with increasing $Li_{2}CO_3$ doping rations. In the case of the 3wt% $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics sintered at $900^{\circ}C$, relative permittivity and dielectric loss were 907 and 0.003 at 100 kHz.