• Progress in Superconductivity
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• v.11 no.1
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• pp.47-51
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• 2009

For many large-scale applications of high-temperature superconducting materials, large critical current density ($J_c$) in high applied magnetic fields are required. A number of methods have been reported to introduce artificial pinning centers in $YBa_2Cu_3O_{7-{\delta}}$ films for enhancement of their $J_c$. We studied the microstructures and characteristic of $YBa_2Cu_3O_{7-{\delta}}$ films fabricated on $SrTiO_3$ (100) substrates with ZnO nanorods as pinning centers. Au catalyst nanoparticles were synthesized on STO substrates with self assembled monolayer to control the number of ZnO nanorods. The density of Au nanoparticles is approximately $240{\sim}260{\mu}m^{-2}$ with diameters of $41{\sim}49nm$. ZnO nanorods were grown on STO by hot-walled PLD with Au nanoparticles. Typical size of ZnO nanorod was around 179 nm in diameter and $2{\sim}6{\mu}m$ in length respectively. YBCO films deposited directly on STO substrates show the c-axis orientation, while YBCO films with ZnO nanorods exhibit any mixed phases without any typical crystal orientation.

• The Journal of the Petrological Society of Korea
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• v.20 no.1
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• pp.1-21
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• 2011

Eoil basalt in the Eoil basin and Yeonil basalt and its related volcanic rocks in Guryongpo and Daebo area were researched and analyzed to purse the tectonic settings and magma characteristics of those Tertiary volcanic rocks in the south-east Korean peninsula. It is highly suggested that zoning, resorption and sieve texture in plagioclase and reaction rim in pyroxene indicate unstable tectonic environments and complex volcanism in the study area. Volcanic rocks from Janggi basin are identified as basalt and basaltic andesite in TAS diagram and sub-alkaline series in terms of magma differentiation. $Na_2O$ and $K_2O$ show positive trend however FeO, CaO, MgO and $P_2O_5$ indicate negative trend in Harker variation diagram with $SiO_2$. Basaltic rocks from Eoil area are identified as calc-alkaline series in AFM diagram and show medium K series calc-alkaline in $K_2O-SiO_2$ diagram. Compatible trace elements of Co, Ni, V, Zn, and Sc in Yeonil basalt show negative trend with crystallization but incompatible trace element of Ba, Rb show positive trend with $SiO_2$ 0.81~1.00 of $Eu/Eu^*$ value suggests minor effect of plagioclase fractionation in Yeonil basaltic rocks. Plagioclase composition of Eoil basalt ranges from $An_{63.46-98.38}\;Ab_{1.62-32.96}\;Or_{0-3.58}$ (anorthite-labradorite) in core to $An_{40.89-82.44}\;Ab_{17.10-46.43}\;Or_{0-12.68}$ (bytownite-labradorite) in rim. $^{87}Sr/^{86}Sr$ and 143Nd;t44Nd ranges 0.704090~0.704717 and 0.512705~0.512822 respectively. Negative linear trends in 87Sr/86Sr and $^{143}Nd/^{144}Nd$ correlation diagram indicate that magma produced Yeonil basalt and basaltic andesite has been originated as partial melting product of mantle wedge by subducting Pacific plate affected by oceanic crust with less effect of continental crust indicating calc-alkaline magma characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.623-626
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• 2004

[ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.291-293
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• 1997

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.171-172
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• 2008

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ (BSCT) thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ ($0.1{\sim}0.7$ mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The lattice constants of the BSCT thick film doped with 0.1 mol% is 0.3955 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about 6.3 mm. The thickness of all BSCT thick films was approximately 60 mm. The Curie temperature of the BSCT specimen doped with 0.1 mol% $Yb_2O_3$ was $18^{\circ}C$, and the dielectric constantand dielectric loss at this temperature was 4637 and 4.2%, respectively. The BSCT specimen doped with 0.1 mol% $Yb_2O_3$ showed the maximum value of $349{\times}10^{-9}C/cm^2K$ at Curie temperature. The figure of merit $F_D$ for specific detectivity of the specimens doped with 0.1 mol% $Yb_2O_3$ showed the highest value of $10.9{\times}10^{-9}Ccm/J$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.3 s.94
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• pp.253-259
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• 2005

In this paper, BaSrTiO$_{3}$(BST) thin film tunable interdigital capacitor using low cost silicon substrate instead of expensive single-crystalline substrate is presented. The tunable capacitor in which BST thin film is deposited by PLD has operation frequency and applied bias up to 4 GHz and 50 V, respectively. The maximum tunability in capacitance is found to be 30$\%$, for an applied field of 5 kV/cm at a bias of 50 V. Therefore, it has been shown that the BST microwave tunable capacitor can be integrated onto Si substrate.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Korean Journal of Mineralogy and Petrology
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• v.35 no.2
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• pp.83-100
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• 2022

The Zhenzigou Pb-Zn deposit, which is one of the largest Pb-Zn deposit in the northeast of China, is located at the Qingchengzi mineral field in Jiao Liao Ji belt. The geology of this deposit consists of Archean granulite, Paleoproterozoinc migmatitic granite, Paleo-Mesoproterozoic sodic granite, Paleoproterozoic Liaohe group, Mesozoic diorite and Mesozoic monzoritic granite. The Zhenzigou deposit which is a strata bound SEDEX or SEDEX type deposit occurs as layer ore and vein ore in Langzishan formation and Dashiqiao formation of the Paleoproterozoic Liaohe group. White mica from this deposit are occured only in layer ore and are classified four type (Type I : weak alteration (clastic dolomitic marble), Type II : strong alteration (dolomitic clastic rock), Type III : layer ore (dolomitic clastic rock), Type IV : layer ore (clastic dolomitic marble)). Type I white mica in weak alteration zone is associated with dolomite that is formed by dolomitization of hydrothermal metasomatism. Type II white mica in strong alteration zone is associated with dolomite, ankerite, quartz and alteration of K-feldspar by hydrothermal metasomatism. Type III white mica in layer ore is associated with dolomite, ankerite, calcite, quartz and alteration of K-feldspar by hydrothermal metasomatism. And type IV white mica in layer ore is associated with dolomite, quartz and alteration of K-feldspar by hydrothermal metasomatism. The structural formulars of white micas are determined to be (K_0.92-0.80Na_0.01-0.00Ca_0.02-0.01Ba_0.00Sr_0.01-0.00)_0.95-0.83(Al_1.72-1.57Mg_0.33-0.20Fe_0.01-0.00Mn_0.00Ti_0.02-0.00Cr_0.01-0.00V_0.00Sb_0.02-0.00Ni_0.00Co_0.02-0.00)_1.99-1.90(Si_3.40-3.29Al_0.71-0.60)_4.00O₁₀(OH_2.00-1.83F_0.17-0.00)_2.00, (K_1.03-0.84Na_0.03-0.00Ca_0.08-0.00Ba_0.00Sr_0.01-0.00)_1.08-0.85(Al_1.85-1.65Mg_0.20-0.06Fe_0.10-0.03Mn_0.00Ti_0.05-0.00Cr_0.03-0.00V_0.01-0.00Sb_0.02-0.00Ni_0.00Co_0.03-0.00)_1.99-1.93(Si_3.28-2.99Al_1.01-0.72)_4.00O₁₀(OH_1.96-1.90F_0.10-0.04)_2.00, (K_1.06-0.90Na_0.01-0.00Ca_0.01-0.00Ba_0.00Sr_0.02-0.01)_1.10-0.93(Al_1.93-1.64Mg_0.19-0.00Fe_0.12-0.01Mn_0.00Ti_0.01-0.00Cr_0.01-0.00V_0.00Sb_0.00Ni_0.00Co_0.05-0.01)_2.01-1.94(Si_3.32-2.96Al_1.04-0.68)_4.00O₁₀(OH_2.00-1.91F_0.09-0.00)_2.00 and (K_0.91-0.83Na_0.02-0.01Ca_0.02-0.00Ba_0.01-0.00Sr_0.00)_0.93-0.83(Al_1.84-1.67Mg_0.15-0.08Fe_0.07-0.02Mn_0.00Ti_0.04-0.00Cr_0.06-0.00V_0.02-0.00Sb_0.02-0.01Ni_0.00Co_0.00)_2.00-1.92(Si_3.27-3.16Al_0.84-0.73)_4.00O₁₀(OH_1.97-1.88F_0.12-0.03)_2.00, respectively. It indicated that white mica of from the Zhenzigou deposit has less K, Na and Ca, and more Si than theoretical dioctahedral mica. Compositional variations in white mica from the Zhenzigou deposit are caused by phengitic or Tschermark substitution [(Al³⁺)^VI+(Al³⁺)^IV <-> (Fe²⁺ or Mg²⁺)^VI+(Si⁴⁺)^IV] substitution. It means that the Fe in white mica exists as Fe²⁺ and Fe³⁺, but mainly as Fe²⁺. Therefore, white mica from layer ore of the Zhenzigou deposit was formed in the process of remelting and re-precipitation of pre-existed minerals by hydrothermal metasomatism origined metamorphism (greenschist facies) associated with Paleoproterozoic intrusion. And compositional variations in white mica from the Zhenzigou deposit are caused by phengitic or Tschermark substitution [(Al³⁺)^VI+(Al³⁺)^IV <-> (Fe²⁺ or Mg²⁺)^VI+(Si⁴⁺)^IV] substitution during hydrothermal metasomatism depending on wallrock type, alteration degree and ore/gangue mineral occurrence frequency.

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.527-530
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• 2009

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.