• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.59-59
• /
• 2008

Pb(Zr,Ti)$O_3$(PZT)는 현재 가장 우수한 압전특성을 가진 압전 재료로써, 압전효과와 역압전효과를 이용한 압전 액추에이터, 압전 트랜스듀서, 센서, 레조네이터 등의 활동에 대한 연구과 활발하게 이루어 지고 있다. 그러나 압전성이 우수한 PZT 세라믹스들은 Pb 성분이 포함되어 있기 때문에 환경오염뿐 아니라, 경제적인 측면에서도 많은 문제점을 가지고 있어 최근에는 유해원소인 Pb를 포함하지 않는 친환경 압전 세라믹스에 관한 연구가 활발히 진행되고 있다. (Na, K)$NbO_3$은 뛰어난 특성을 가지고 있어 Pb를 기본조성으로 하는 압전세라믹스를 대체할 수 있는 대표적인 물질중의 하나로 알려져 있다. 그러나, potassium의 수분과의 반응성과, 소결시 휘발로 인해 높은 소결밀도의 NKN을 제조하기 어렵다. 이러한 단점을 보안하기 위해 Hot pressing, Hot forging, SPS 등 여러가지 방법을 이용하여 연구가 수행되고 있지만, 고가의 제조공정을 이용해야만 한다. 본 연구에서는 $BaSrTiO_3$의 새로운 고용체를 추가시켜 기본 NKN 조성보다 소결밀도, 유전 및 압전특성을 향상시키고자 하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.200-200
• /
• 2008

This paper reports on electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for I hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function fo electric field (${\pm}40$ KV/cm) at room temperature using interdiigitated Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the finger paris was increased onto $Al_2O_3$, the capacitance increased. The capacitance of 5 pairs finger was 0.3pF and 10 pairs finger was 0.9pF.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.623-626
• /
• 2004

[ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
• /
• pp.34-38
• /
• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.179-179
• /
• 2009

This is for the electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST materials had been chosen for high frequency applications due to it's high permitivity and tunability. The BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700\;^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1 hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function of electric field ($\pm40$ KV/cm) at room temperature using inter-digital Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the 10 pairs finger was the best capacitance onto $Al_2O_3$ substrate. The capacitance was 0.9pF. Also Dielectric constant was been 351 at 100 mTorr and annealing temperature $750^{\circ}C$ for 1 hour. The loss tangent was been 0.00531.

• 마이크로전자및패키징학회지
• /
• 제11권3호
• /
• pp.63-70
• /
• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
• /
• pp.291-293
• /
• 1997

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
• /
• pp.918-920
• /
• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.719-722
• /
• 2004

In this work, we applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film. We compared the structural characteristics of BST $(Ba_{0.6}Sr_{0.4}TiO_3)$ films before and after the CMP process. Their dependence on slurry composition was also investigated. Finally, we suggest the self-developed titania $(TiO_2)$ mixed abrasive slurry (MAS) for FRAM applications. Our experimental results on the ferroelectric film are encouraging for the next generation of FRAM applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.22-25
• /
• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.