• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.76-79
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• 2000

The $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the BZT ceramics with the sintering temperature were investigated by XRD, SEM. The BZT ceramics have a complex-perovskite structure. The BZT ceramics sintered at $1550^{\circ}C$ had a superstructure plane of BZT(100). Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZT ceramics sintered at $1550^{\circ}C$ was $7.50[g/cm^3]$. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.636-640
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• 2011

The lead-free $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Ba(Zr_{0.52},Ti_{0.48})O_3$-(hereafter NKN-BZT) CuO, ZnO-doped ceramics were prepared using a conventional mixed oxide method. NKN-BZT ceramics doped CuO, ZnO have superior structural and electrical properties than pure NKN-BZT ceramics. For the NKN-BZT-ZnO ceramics sintered at $1,120^{\circ}C$, piezoelectric constant ($d_{33}$) of sample showed the optimum values of 172 pC/N. The $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Ba(Zr_{0.52},Ti_{0.48})O_3$-ZnO ceramics are a promising candidate for lead-free piezoelectric materials.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.481-485
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• 2001

We investigated the structural and electrical properties of the Ba ($Zr_{x}$ $T_{il-x}$ )$O_3$ (BZT thin films with a mole fraction of x=0.2 and thickness 150 nm for the application in MLCC (Multilayer Ceramic Capacitor). BZT films were prepared on $Pt/SiO_2$/Si substrate at various substrate temperatures by the RF-magnetron sputtering system. When the substrate temperature was above $500^{\circ}C$, we could obtain multi-crystalline BZT films oriented at (110), (111), and (200) directions. The crystallization of the film and high dielectric constant were observed with the increase of substrate temperature. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature. This paper reports surface morphology, dielectric constant, dissipation factor, and C-V characteristics for BZT films deposited at three different temperatures. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties but a little small dielectric constant for MLCC application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.477-483
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.51.1-51.1
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• 2004

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1436-1437
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• 2011

(1-x)(Na,K)$NbO_3$-xBa(Zr,Ti)$O_3$ lead free piezoelectric ceramics were synthesized to enhance the piezoelectric properties of (Na,K)$NbO_3$. The synthesis and sintering method were the conventional solid state reaction method and general sintering method in air atmosphere. We report the improved piezoelectric properties in the perovskite structure composed of the NKN and BZT ceramics. We investigated the effects of NKN, BZT on the structural and electrical properties of the NKN-BZT ceramics. The NKN-BZT ceramics show good performance with piezoelectric constant $d_{33}$=155pC/N. The results reveal that (1-x)(Na,K)$NbO_3$-xBa(Zr,Ti)$O_3$ ceramics are promising candidate materials for lead-free piezoelectric application.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1667-1669
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• 2000

The 0.8Ba($Zn_{1/3}Ta_{2/3})O_3$-0.2Ba($Co_{1/3}Nb_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the 0.8BZT-0.2BCN ceramics with the sintering temperature were investigated by XRD and SEM. The 0.8BZT-0.2BCN ceramics had a superstructure reflection plane of (100), (200). Increasing the sintering temperature. the ordering parameter of B-site atoms were increased. The lattice constant of 0.8BZT-0.2BCN ceramics was 3.97${\AA}$. Increasing the sintering temperature, the average gram sizes were increased. In the case of the 0.8BZT-0.2BCN ceramics sintered at 1500$^{\circ}C$, the average grain size and bulk density were 1.56${\mu}m$, 6.93$g/cm^3$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.383-386
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• 2000

The 0.6Ba(Zn$_{1}$3/Ta$_{2}$3/)O$_3$-0.4Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ceramics were prepared by the conventional mixed oxide method. The structural properties of the 0.6BZT-0.4BCN ceramics with the sintering temperature were investigated by XRD, SEM. The 0.6BZT-0.4BCN ceramics had a complex-perovskite structure. Increasing the sintering temperature, the peak intensity of the superstructure reflection plane were increased and the density and ordering were increased. The density of the 0.6BZT-0.4BCN ceramics sintered at 1475$^{\circ}C$ was 6.455[g/cm$^3$].

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.242-245
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• 1996

The microstructure of $Ba (Zn_{1/3}Ta_{2/3})O_3$ (BZT) was investigated using X-ray diffractometry(XRD) and transmission electron microscopy (TEM). $Ba_{0.5}TaO_3$ and $Ba_3TaO_{5.5}$ (BT) phasses were observed on the surface of the sintered specimen by XRD. Furthermore, a new type of ordering along the [110] direction was found in sintered specimen by the XRD and TEM analysis. The wavelength of ordering was 0.9 nm which is three times larger than the interplanar distance of (110) plane and new type of ordering is considered to be a result of Zn vacancy ordering. The creation of Zn vacancies and formation of BT phases are attributed to the evaporation of volatile ZnO. A new mechanism for ZnO loss is suggested. In this mechanism, only Zn vacancies are created only when the amount of ZnO loss is small and as the amount of ZnO loss increases, BT phases are formed at the same time. A new unit cell of ordered structure is suggested as the superlattics containing three BZT unit cells.