• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.96-96
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• 2007

Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin films were recently reported, pointing to high-k gate insulators as a promising route for realizing low voltage operating flexible electronics. $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin film is one of the most promising materials for gate insulator because of its large dielectric constant (~60) at room temperature. However their tendency to suffer from relatively high leakage current at low electric field (>0.3MV/cm) hinder the application of BZN thin films for gate insulator. In order to improve leakage current characteristics of BZN thin film, we mixed 30mol% MgO with 70mol% BZN and their dielectric and electric properties were characterized. We fabricated field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-k $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ as the gate insulator. The devices exhibited low operation voltages (<4V) due to high capacitance of the $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.18-19
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• 2006

The bismuth zinc niobate(BZN) pyrochlore thin films were fabricated on Pt(111)/Ti/$SiO_2$/p-Si(100) substrates using a reactive rf magnetron sputtering method at the conditions of working gas ratio Ar:$O_2$=90:10, substrate temperate $R.T{\sim}600^{\circ}C$, rf power 50 W. The dielectric constant, tunability, leakage current density and crystallinity of thin films changed with a substrate temperate. The BZN pyrochlore thin films sputtered with a substrate temperature of $600^{\circ}C$ and RTA at $800^{\circ}C$ showed a leakage current density lower than $10^{-8}\;A/cm^2$ at the range of ${\pm}300\;kV/cm$.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.84-88
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• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1042-1045
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• 2001

Microwave dielectric properties of Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_3$-Sr(Zn$_{1}$3/Nb$_{2}$3/) $O_3$(BZN-SZN) system were investigated as a function of sintering temperature and Zr $O_2$content. Density was increased and the temperature coefficient of resonant frequency (TCF, $\tau$$_{f}$) decreased with increasing sintering temperature. However dielectric constant (K) and Q$\times$f value did not change markedly with the sintering temperature. For the samples sintered at the same temperature, density, dielectric constant, and Q$\times$f value were increased and TCF was decreased with increasing Zr $O_2$concentration. Especially, the dielectric constant of the sample increased with x and exhibited the maximum value ($\varepsilon$$_{r}$=41) when x=0.6 at 1575$^{\circ}C$ sintered. TCF decreased with x and exhibited the minimum value ($\tau$$_{f}$=+0.8ppm/$^{\circ}C$) when x=1.0..0.

• Journal of Advanced Navigation Technology
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• v.17 no.6
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• pp.720-725
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• 2013

This paper has presented that fringing-electric fields enhanced by a finger-type electrode can improve the tunability of the tunable capacitor. Its top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are analyzed in terms of effective capacitance and tunablility. Their effective capacitance and tunability of the varactors with the long perimeter increase 24~40 % and 7~12 %, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz.

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.233-241
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• 1990

본 연구에서는 xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-yBa(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-zPbTiO(0.50.leq.x.leq.0.60, 0.10.leq.y.leq.0.20, 0.20.leq.z.leq.0.40)세라믹을 1050.deg.C에서 2시간동안 유지시켜 일반소성법으로 제작하였다. 시편 제작시 조성은 조성변태 상경계부근을 선택하였으며 Ba(Zn$_{1}$3/ Nb$_{2}$3/)O$_{3}$ 고용량에 따른 purochlore상의 억제 및 그 영향을 조사하고 구조적, 유전적 및 압전적 특성을 측정하였다. X-선 회절분석 및 미세구조의 관찰 결과, Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량에 따라 pyrochlore상 및 미반응 물질등은 억제되어 0.20mol 고용된 시편에서는 균질한 perovskite상이 형성되었다. Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량이 증가함에 따라 유전상수는 증가하여 0.50PZN-0.20BZN-0.30PT시편의 경우 6880.9의 높은 값을 나타내었으며 정전용량의 온도계수는 감소하여 0.383[%/.deg.C]의 양호한 값을 나타내었다. 큐리온도는 PbTiO$_{3}$의 고용량이 0.20mol에서 0.40mol로 증가함에 따라 30.deg.C에서 170.deg.C로 증가하였다. 전기기계 결합계수 (K$_{p}$), 기계적 품질계수(Qm) 및 압전전하 계수 (d$_{33}$)는 조성변태 상경계 부근의 조성에서 크게 나타났으며 0.60PZN-0.15BZN-0.25PT 시편의 경우 각각 58.5%, 120.5, 150x$10^{-12}$[C/N]의 값을 나타내었다.다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.70-73
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• 1989

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})O_3-Ba(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3(0.12{\leq}x{\leq}0.21, 0.24{\leq}y{\leq}0.33$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1050 [$^{\circ}C$], 2[hr]. Morphotropic phase boundary region was chosen for the composition. 0.55 PZN-0.21 BZN-0.24 PT specimen had the highest value of relative dielectric constants, 5353. The curie temperature of specimens were increased linearly with PT content. Near the morphotropic phase boundary, electro-mechanical coupoling factor and mechanical quality factor of the specimens had the highest values.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.2
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• pp.45-49
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• 2014

In this work, a phase shifter radio-frequency integrated chip (RFIC) using a simple all-pass network is presented. As a tuning element of the phase shifter RFIC, tunable capacitors with a multi-layer dielectric of a para-/ferro-/para-electrics using a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film were utilized. In order to evaluate and analyze the fabricated phase shifter RFIC, the same elements such as an inductor and capacitor integrated into it are also fabricated and tested. The designed phase shifter RFIC was fabricated on a quartz substrate in the size of $1.16{\times}1.21mm^2$. As the test results, the maximum phase difference of $350^{\circ}$ is obtained at 15 V and its tuning frequency bandwidth is 90 MHz from 2.72 to 2.81GHz.

• Journal of Powder Materials
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• v.17 no.4
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.79-85
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• 2023

A novel low-temperature co-fired ceramic (LTCC) dielectric, composed of (1-4x)Bi_1.5Zn_1.0Nb_1.5O₇-3xBi₂Zn_2/3Nb_4/3O₇-2xLiZnNbO₄ (x=0.03-0.21), was synthesized through reactive liquid phase sintering of Bi_1.5Zn_1.0Nb_1.5O₇-xLi₂CO₃ ceramic at temperatures ranging from 850℃ to 920℃ for 4 hours. During sintering, Li₂CO₃ reacted with Bi_1.5Zn_1.0Nb_1.5O₇, resulting in the formation of Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄. The resulting sintered body exhibited a relative sintering density exceeding 96% of the theoretical density. By altering the initial Li₂CO₃ content (x) and consequently modulating the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇, Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄ in the final sintered body, a sample with high dielectric constant (ε_r), low dielectric loss (tan δ), and the temperature coefficient of dielectric constant (TCε) characterized by NP0 specification (TCε ≤ ±30 ppm/℃) was achieved. As the Li₂CO₃ content increased from x=0.03 mol to x=0.15 mol, the volume fraction of Bi₂Zn_2/3Nb_4/3O₇ and LiZnNbO₄ in the composite increased, while the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇ decreased. Consequently, the dielectric constant (εr) of the composite materials varied from 148.38 to 126.99, the dielectric loss (tan δ) shifted from 5.29×10^-4 to 3.31×10^-4, and the temperature coefficient of dielectric constant (TCε) transitioned from -340.35 ppm/℃ to 299.67 ppm/℃. A dielectric exhibiting NP0 characteristics was achieved at x=0.09 for Li₂CO₃, with a dielectric constant (ε_r) of 143.06, a dielectric loss (tan δ) value of 4.31×10^-4, and a temperature coefficient of dielectric constant (TCε) value of -9.98 ppm/℃. Chemical compatibility experiment with Ag electrode revealed that the developed composite material exhibited no reactivity with the Ag electrode during the co-firing process.