• 한국재료학회지
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• 제10권9호
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• pp.607-611
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• 2000

고밀도 DRAM에서 박막 커패시터로의 적용을 위해 Zr이 첨가된 (Ba(sub)1-x, Sr(sub)x)TiO$_3$<원문차조> 박막이 r.f. magnetron sputter-ing 법에 의해 제조되었다. 증착된 박막들은 다결정질 구조를 보였으며 증착압력이 감소함에따라 Zr/Ti의 비가 현저히 증가하였으며 본 연구에서는 얻어진 박막들은 100kHz에서 380∼525의 유전상수값을 나타냈다. 전압에 따른 커패시턴스와 분극량의 변화는 이력특성을 크게 보이지 않아 상유전상으로 형성되었음을 보였다. 누설전류밀도는 증착압력이 감소함에 따라 작아지는 경향을 보였고 10mTorr이상에서 증착된 박막의 경우 200kV/cm의 전계에서 10(sup)-7∼10(sup)-8A/$\textrm{cm}^2$의 차수를 갖는 누설전류밀도를 보여 본 연구에서 제조된 (Ba(sub)1-x, Sr(sub)x)(Ti(sub)1-x, Zr(sub)x)O$_3$<원문참조>박막은 고밀도 DRAm을 위한 커패시터에의 적용가능성을 보였다.

• Nuclear Engineering and Technology
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• 제56권1호
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• pp.247-256
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• 2024

The glass series modified by tungsten oxide was created using the compounds (75-x) B₂O₃- 10SrCO₃- 8TeO₂- 7ZnO - xWO₃, where x = 0, 1, 5, 10, 22, 27, 34, and 40% mole percentage. A UV-visible spectrophotometer and thermogravimetric-differential thermal analysis (TG-DTA) methods were employed to characterize the specimen's optical and phase transition attributes, respectively. The mass-attenuation coefficient (AC) of all created glasses from BSTZW0 to BSTZ7 was estimated using Geant4 code from 0.05 to 3 MeV and compared to the XCOM software results, with a relative difference of less than 2% between the two results. The increase of WO₃ percentage lead to an increase in the Linear-AC at each studied energy, and this is mainly due to the fact that the higher the percentage of WO₃ in the glass increases its density which causes an increase in the Linear-AC, so an energy of 0.06 MeV, as an example, the values of the Linear-AC was 4.009, 4.509, 5.442, 6812, 8.564, 9.856, 10.999 and 11.628 cm^-1 form BSTZW0 too BSTZW7, respectively. The Half-VL (value layer), Mean-FP (free path), Tenth-VL, and Radiation attenuation performance (RAP) were also calculated for the current BSTZW-glass samples and revealed that BSTZW7 had the best gamma ray attenuation performance at all discussed energies when compared to other studied glass samples.