• 대한영상의학회지
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• 제82권5호
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• pp.1258-1273
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• 2021

목적 풍선-스텐트 테크닉(balloon-stent technique; 이하 BST)은 복잡한 동맥류를 치료하는 보조술로서 그 고유한 장점을 가지고 있다. 저자들의 기관에서 Atlas의 출시 이래 Scepter-Atlas 조합의 BST를 치료에 적용해 온 경험을 공유하고자 한다. 대상과 방법 초기에 Atlas를 Scepter 카테터에 진입시키지 못하는 기술적 실패를 겪은 뒤 이를 해결하기 위해 문제가 되었던 기구들을 면밀히 관찰하였다. 2018년 3월부터 2019년 12월까지 총 57개의 비파열성 원위내경동맥 동맥류에 대해 코일 색전술을 시행하였고, 이중 25개(23명)의 증례는 BST로 치료하였다. 포함된 증례들의 영상 및 임상 정보는 후향적으로 수집하고 분석하였다. 결과 이 논문에서 소개하는 간단한 팁을 알게 된 이후 Scepter-Atlas 조합의 기술적 성공률은 50%에서 100%로 상승하였다. BST로 치료한 환자군에서 시술 직후에 84%, 추적검사에서 95.8%가 완전하거나 거의 완전한 폐색을 보였고 stent-assisted coil 그룹에서는 각각 96.3%, 88.4%가 시술 직후와 추적검사에서 같은 결과를 보였다. 소수의 환자에서 합병증을 보였지만 임상적으로 문제가 된 증례는 없었다. 결론 Scepter-Atlas 조합을 이용한 BST는 원위내경동맥에 위치한 비파열성 동맥류를 치료하는 데 효과적이고 안전한 방법이 될 수 있다. Scepter는 Atlas를 매개하는 카테터로 충분히 사용될 수 있다.

• 대한수의학회지
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• 제43권2호
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• pp.203-210
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• 2003

The purpose of this study is to investigate the pharmacokinetics and tissue distribution of recombinant bovine somatotropin (rBST) after subcutaneous adminstration of $^{125}I-rBST$ in male and female rats. A solid state conjugation (Iodo-bead$^{(R)}$) method was confirmed useful for producing $^{125}I-rBST$ because the administration of the conjugated form enabled enough to determine time- concentration relationships of rBST in rats. Subcuatenous administrations showed sex differences that female ($t_{1/2,kc}$, 2.87 h) revealed rapid elimination as compared to male ($t_{1/2,ke}$, 4.81 h), with the absorption ($t_{1/2,ka}$ in male being 0.3 h and that in female 0.75 h) in the reverse order. For subcutaneous administration of rBST in male rats, the liver was the highest in amount, followed by kidney, testes, muscle, and stomach, at the slaughtering tame of 1, 6, 12 and 24 h. But the testes was the highest at the 48 h slaughtered animals, followed by liver, kidney, stomach, and muscle. In slaughtered females at 1, 6, and 12 h after the administration of rBST, the liver was the highest, followed by ovary, kidney, small intestine, and stomach. At 24 and 48 h slaughtered female rats, the ovary was the highest, the liver the second, and the kidney the third.

• 한국식품위생안전성학회지
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• 제5권4호
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• pp.179-186
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• 1990

이 연구는 수입 축산식품중에 잔류해서 사람에게 해를 줄 수 있는 여러 합성 홀몬의 발암성을 알아보기 위하여 수행한 연구이다. 6주령의 F344 랫드를 5군으로 나누어 발암유발물질인 diethylstilbesterol(DENA)를 체중 kg당 200 mg을 복강 내 투여하고, 시험게시 제2주에서 시험종료시까지 제 1, 2, 3,군에 각각 diethylstilbesterol(DES), ethynylestradio($EE_2$), bovine somatotrophin(BST)을 투여하고, 제 4군에는 발암촉진이 잘 알려진 phenobabital을 투여하였으며, 제 5군은 대조군으로 기초사료만을 급여하였다. 동시에 모든군의 랫드는 D-galactosamine을 체중 kg 당 300 mg을 복강내로 1회 투여하였으며, 간변화의 증폭을 위하여 2/3 간부분 절제를 시험개시 제 5주에 실시하였다. 시험종료시 부검후 랫드의 간장은 GST-P에 대한 면역조직화학적 염색을 실시하여 발암성을 검색하였다. 두개의 합성 에스트로젠 홀몬($EE_2$, DES)은 대조군과 비교하였을 때 발암성이 있는 것으로 생각되어지고, BST는 발암성이 없는 것으로 생각된다.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• 전자공학회논문지A
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• 제33A권2호
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• pp.114-121
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• 1996

Thin film Ba$^{0.7}Sr^{0.3}TiO^{3}$ (BST) capacitors were fabricated on SiO$_{2}$/Si substrates by RF magnetron sputtering method and characterized at microwave frequencies ranging from 40 MHz to 1GHz to examine the dielectric dispersion of the capacitors. The BST thin films were electrode material of BST thin films capacitor which is known as one of the best electrode materials for BST films. 50$\AA$-thick titanium (Ti) layers were introduced to increase adhesion between bottom Pt and SiO$_{2}$. The leakage current density of the capacitors was about 1.7${\times}10^{7}A/cm^{2}$ at 1.5V and the dielectric constant was about 140 at 1MHz. Microwave measurement patterns having a coplanar waveguide type were fabricated and their S parameters were measured using network analyzer. After de-embedding parasitic components in microwave measurement patterns nearly frequency-invariant dielectric constant of about 120 was extracted in the measurement range of 40 MHz to 1 GHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.291-293
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• 1997

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

• Bulletin of the Korean Chemical Society
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• 제32권1호
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• pp.141-144
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• 2011

We report the synthesis of $SrTiO_3$, $BaTiO_3$ and $Ba_xSr_{1-x}TiO_3$ (BST) nanoparticles (NPs) in various compositions (x = 0.25, 0.5 and 0.75) by an inorganic sol-gel method under a basic condition. Highly crystalline nanoparticles were formed at the reaction temperature of 25 - $100^{\circ}C$ from a stabilized titanium alkoxide in tetramethylammonium hydroxide (TMAH) and barium or strontium acetate in aqueous solution. Morphology and particle structure of the synthesized BST NPs were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The BST nanoparticles in various compositions were monodispersed without mutual aggregation, and their average sizes were in the range of 70 - 80 nm. Furthermore, they showed highly crystallized perovskite phase over the whole composition range from $SrTiO_3$ to $BaTiO_3$. We also proposed a mechanism for the low-temperature formation of BST NPs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.51-54
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• 2000

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).