• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권2호
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• pp.65-72
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• 2001

This paper presents the design and test results of a 10kVA single phase HTS transformer which is operating at 77K. Double pancake windings with BSCCO -2223 HTS tape and GFRP cryostat with room temperature bore are used in the transformer. Four double pan cake windings were used in pancake windings are connected in parallel to conduct the secondary current of 45.4A. the rated voltages of each winding are 440/220V. Numerical calculation using Finite Element Method was used to evaluated the performance of each arrangement. Considering the magnetizing reactance, leakage reactance, electrical insulation and the circulating current in low voltage winding which had two windings in parallel, HLLH arrangement was finally chosen. Estimation of the AC loss, magnetizing loss and self field loss, in the design stage, where effects of perpendicular field and parallel field are considered. Room temperature bore type cryostat has been constructed and its heat loss was measured.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.278-280
• /
• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 Phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820$^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0x10$\^$-6/ and 2.3x10$\^$-5/ Torr. Bi 2212 Phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$\sub$c/(onset) of about 70 K and T$\sub$c/(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.