• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.523-530
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• 2017

In this study, we developed the h-BN interphase for ceramic matrix composites (CMCs) through a wet chemical coating method, which has excellent price competitiveness and is a simple process as a departure from the existing high cost chemical vapor deposition method. The optimum condition for nitriding an h-BN interphase using boric acid and urea as precursors were derived, and the h-BN interphase coating through a wet method on a carbon preform of 2.5 D was conducted to apply the optimum conditions to the CMCs. In order to control the coating property via the wet coating method, four parameters were investigated such as dipping time of the specimen in the precursor solution, the ratio of boric acid and urea in the precursor, the concentration of solution where the precursor was dissolved, and the cycle of dipping and dry process. The CMCs was fabricated through polymer impregnation and pyrolysis (PIP) processes and a three-point flexural strength test was conducted to verify the role of the coated h-BN interphase.

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.155-159
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• 1995

Borosilicate, $B_2O_3$ and BN derived from liquid precursors have been tested as shielding materials for the long period of oxidation resistance of C/BN composites at $650^{\circ}C$. Borosilicate coating displayed excellent oxidation resistance and low moisture absorbance, while $B_2O_3$ and BN were less effective in elevating the oxidation resistance. The enhancement of the oxidation resistance was explained as self-healing effect by viscous flow of the borosilicate glass over Tg, resulting in the reduction of the exposed carbon fibers in a BN matrix.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.87-92
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• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.238-244
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• 2008

Modeling and FEM analysis on Boron Nitride and/or Pyrolytic Carbon coating layers on SiC fibers under indentation contact loadings are investigated. Especially this study attempts to model the mechanical behavior of the SiC fibers with and without coatings. Tyranno S grade and Tyranno LoxM grade of SiC are selected for fiber and Boron Nitride and/or Pyrolytic Carbon as coating material. The modeling is performed by SiC fiber without coating layer, which includs single(BN or PyC) and double(BN-PyC or PyC-BN) coating layer. And then the analysis is performed by changing a type of coating layer, a type of fiber and coating sequence. In this study, the concepts of modeling and analysis techniques for optimum design of BN and PyC coating process on SiC fiber are shown. Results show that stresses are reduced when indentation contact loading applies on the material having lower elastic modulus.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.120-125
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• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• Journal of Powder Materials
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• v.8 no.3
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• pp.174-178
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• 2001

The microstructure and mechanical properties of $Si_3N_4/BN $nanocomposites synthesized by chemical processing were investigated. The nanocomposites containing 15 vol% hexagonal BN (h-BN) were fabricated by hot-pressing $\alpha-Si_3N_4$powders covered with turbostratic BN (t-BN). The t-BN coating on $\alpha-Si_3N_4$particles was prepared by heating $\alpha-Si_3N_4$ particles covered with a mixture of boric acid and urea in hydrogen gas. TEM observations of this nanocomposite revealed that nano-sized h-BN particles were homogeneously dispersed within $Si_3N_4$grains as well as at grain boundaries. The strength and thermal shock resistance were significantly improved in comparison with the $Si_3N_4/BN$ microcomposites.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1268-1274
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• 1997

Effect of elastic/plastic mismatch on the fracture of Si3N4 coating in Si3N4/Si3N4 -BN bilayer was investigated by Hertzian indentation testing. A different amount of mismatch between two layers was induced by different BN addition in the substrate layer, and Hertizian cracks were induced by using WC ball indenter. As a result, as the elastic/plastic mismatch between coating and substrate layer increased, the coating fracture easily occurred. A bending stress induced by different elastic/plastic mismatch was main reason to cause the fracture of coating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.373-379
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• 2020

In this study, TiN-coated cBN (cubic-structure boron nitride) powders were successfully synthesized by a sol-gel method using titanium (IV) isopropoxide (TTIP) and by controlling the heat treatment conditions. After the sol-gel process, amorphous nano-sized TiO_x was uniformly coated on the surface of cBN powder particles. The obtained TiO_x-coated cBN powders were heated at 1,000~1,300℃ for 1 or 6 h in a flow of 95%N₂-5%H₂ mixed gas. With increasing temperature, the chemical composition of the TiO_x coating layer changed in the order of TiO₂→Ti₆O₁₁→Ti₄O₇→TiN due to reduction of the Ti ions. The TiN coating layer was observable in the samples heated at 1,200℃ and appeared as the main phase in the sample heated at 1,300℃. The resulting thickness of the TiN coating layer of the sample heated at 1,300℃ was approximately 45~50 nm.

• Corrosion Science and Technology
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• v.19 no.1
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• pp.23-30
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• 2020

Heat sinks are most widely used in thermal management systems; however, the heat dissipation efficiency is usually limited. Therefore, in order to increase heat dissipation efficiency of the heat sink, the heat-dissipating paint using 2D materials (hexagonal boron nitride (h-BN) and graphene) as thermally conductive additive was designed and evaluated in the present study. The heat dissipation performance of the paint was calculated from temperature difference between the paint-coated and -uncoated specimens mounted on the heat source. The highest heat dissipation performance was obtained when the ratio of h-BN to resin was 1/10 in the paint. In addition, further reduction in the temperature of the test specimen by 6.5 ℃ was achieved. The highest heat dissipation performance of the paint prepared using graphene was achieved at a 1/50 ratio of graphene to the resin, and a 6.5 ℃ reduction was attained. In addition, graphene exhibited enhanced corrosion resistance property of heat-dissipating paint by inhibiting the growth of the paint blisters.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.