• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.133-141
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• 1998

Stainless is widely used for various purposes due to its good corrosion resistance. There has been much research to produce the color stainless steel by several methods. In this experiment, TixN films have been deposited on the SUS304 substrate by the DC magnetron sputtering system and the color and texture of the films as a function of coating conditions has been studies. The TixN films showed a (111) preferred orintation in bias-free conditions. The texture of coated later was changed from (111) to (200) to (2200 with a change of the bias from -1000V to -3000V. When the bias is low, coated elements have low energy. Therefore, the texturct (111) of low surface energy. The mobility of atoms was increased with the increase of the blas and texture was changed to the other plane. Non-etched specimens all exhibited strong (111) texture. This result shows that (111) is a loose plane and of non-etched specimens all exhibited. High growing velocity of (111) of especially was main texture of Non-etched specimens. Low working pressure($4\times10^{-3}$torr) was more effective than figh working pressure ($6\times10^{-3}$torr) for the gold color of $Ti_xN$ film. L and b were increased and a was decreased with the increase of bias voltage. Accordingly, We obtained the near gold color of $Ti_xN$ film(L;92, a;1~1.5 b:24~29.50. As a result of reflectance. And as the bias increased, the reflectance was proportional to the increasing bias voltage, but we took the top reflectance when the bias voltage was -200V.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.