• 한국자기학회지
• /
• 제12권2호
• /
• pp.57-63
• /
• 2002

Nd-Fe-B계 소결자석의 특성을 향상시키기 위해서는 Nd-Fe-B계 합금의 조성 및 제조공정을 조절하여 자성분말의 입도 및 입도분포, 강자성상인 N $d_2$F $e_{14}$B상의 분율, 자성분말의 배향도, 산소 함량, grain size 등과 같은 factor들을 최적화 하여야 한다. 본 연구에서는 실험실 규모로 Nd-Fe-B계 합금 조성 및 공정 조절을 통하여 Nd-Fe-B계 소결자석을 제조하는 연구를 수행하였으며, 분쇄매체 분쇄시간 및 ball size에 따른 Nd-Fe-B계 소결자석의 자기적특성을 분석하여 최적의 분쇄조건을 조사하였다. 또한 분쇄공정 중 FeGa합금을 첨가하여 잔류자속밀도의 감소없이 Nd-Fe-B계 소결자석의 보자력을 향상시킬 수 있었다. 이와 같은 분쇄 조건의 연구, FeGa 합금에 의한 보자력 향상, 건식분쇄 방법 및 powder blending 공정을 적용하여 잔류자속밀도( $B_{r}$,) : 14.4kG, 보자력($_{i}$ $H_{c}$) : 9.4kOe, 최대자기에너지적((BH)$_{\max}$) : 47 MGOe의 자기적 특성을 갖는 Nd-Fe-B계 소결자석을 제조하였다.

• 한국주조공학회지
• /
• 제30권4호
• /
• pp.147-150
• /
• 2010

알루미늄 합금의 미세조직 개량을 위한 목적으로 사용되는 Al-Ti-B 합금계의 미세화제는 재활용 과정에서 붕소(B)의 농축(Agglomeration) 문제 및 Zr, Si, Cr 등을 함유하는 합금에서 미세화 효과가 급격히 감소하는 Poisoning effect 등이 지적되어 왔다. 최근에는 이를 대체할 수 있는 Al-Ti-C 합금계의 미세화제에 대한 연구가 활발한데 이는 TiC가 용탕 내에서 ${\alpha}$-Al의 핵생성처로 직접 작용하는 점에 착안한 것이다. 한편, 이들 Al-Ti-B, Al-Ti-C 계의 미세화제는 그 제조공정에서 $K_2TiF_6$를 이용함에 따라 불소함유 유해가스를 배출하여 환경 문제를 야기하고, 이를 포집/정화하기 위한 추가설비를 요구하게 된다. 따라서 대기 환경 오염 및 경제성 측면에서 유리한 미세화제의 친환경 제조기술에 대한 개발이 필요한 시점이다. 본 연구에서는 $K_2TiF_6$를 사용하지 않고 용탕 내의 자발적 반응을 이용하여 환경 및 경제적 측면에서 유리한 Al-Ti-C 미세화제를 개발하고자 하였다. A3003 합금을 대상소재로 하여 개발된 Al-Ti-C 미세화제와 상용 Al-Ti-B 미세화제의 미세화 도달시간 및 fading 발생 등을 비교하였다. 본 연구를 통하여 개발된 Al-8.6Ti-0.025C 미세화제는 상용 Al-Ti-B 미세화제 보다 적은 첨가량에도 유사한 미세화 성능을 나타내었으며 용탕 유지시간 100분까지도 fading이 발생하지 않는 것을 확인하였다.

• Mycobiology
• /
• 제33권4호
• /
• pp.215-222
• /
• 2005

Variability in growth and sporulation of five isolates of Arthrobotrys dactyloides was studied on five agar, 6 bran and 5 grain media. Potato dextrose agar (PDA) supported maximum growth of isolate A, C and E, while growth of isolate Band D was significantly lower on this medium. On Czapek's agar and yeast glucose agar media the differentiation in the isolates in relation to growth was poor than PDA. The other two media showed much poorer differentiation. On Czapek's agar medium, sporulation was recorded in isolate B only, whereas other isolates showed rare sporulation. Among the bran media, pea bran agar medium supported maximum growth of all the isolates except isolate B. Gram and rice bran agar media were next best. However, the growth of isolate B on the gram bran agar medium was more or less equal as other isolates. On pigeon pea bran agar medium, isolate E failed to grow while other isolates recorded poor growth. On lentil bran agar medium, only isolate Band D recorded little growth, whereas other isolates failed to grow. All the isolates recorded good sporulation on bran agar media except pigeon pea and lentil bran agar media. The grain agar media supported moderate to very good growth of all the isolates. In general isolate B remained slow growing on these media except gram grain and sorghum grain agar media on which growth of this isolate was comparable to other isolates. Sporulation in general, was good on all the grain agar media. Among different substrates screened, barley grain and pea bran were found superior to others for mass culture of isolate A of A. dactyloides.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권9호
• /
• pp.434-441
• /
• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Journal of Magnetics
• /
• 제4권4호
• /
• pp.131-135
• /
• 1999

The HDDR characteristics of the Nd-Fe-B-type isotropic and anisotropic HDDR alloys were investigated using three types of alloys: alloy A $(Nd_{12.6}Fe_{81.4}B_6), alloy B (Nd_{12.6}Fe_{81.3}B_6Zr_{0.1}), and alloy C (Nd_{12.6}Fe_{68.8}Co_{11.5}B_6Ga_{1.0}Zr_{0.1}$). The alloy A is featured with the isotropic HDDR character, while alloy B and C are featured with the anisotropic HDDR character. Hydrogenation and disproportionation characteristics of the alloys were examined using DTA under hydrogen gas. Recombination characteristics of the alloys were examined by observing the coercivity variation as a function of recombination time. The present study revealed that the alloy C exhibits slightly higher hydrogenation and disproportionation temperatures compared to the alloy A and B. Recombination of the anisotropic alloy B and C takes place more rapidly with respect to the isotropic alloy A. The intrinsic coercivities of the recombined materials rapidly increased with increasing the recombination time and then showed a peak, after which the coercivities decreased gradually. The degraded coercivity was, however, recovered significantly on prolonged recombination treatment. Compared with the isotropic HDDR alloy A the anisotropic HDDR alloy B and C are notable for their greater recovery of coercivity. The significant recovery of coercivity was accounted for the in terms of the development of well-defined smooth grain boundary between the recombined grains on prolonged recombination.

• 한국초전도ㆍ저온공학회논문지
• /
• 제8권1호
• /
• pp.1-4
• /
• 2006

The $MgB_2$ tapes with several metal powder addition were fabricated by PIT method with or without heat treatment. The $J_c$ value of $5.600A/cm^2$ and $16.000A/cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol % of Cu added $MgB_2$ tape without heat treatment respectively. The $J_c$ value of $8.000A/cm^2$ and $35,000A/cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape with heat treatment, respectively. The $J_c-B$ curve shows enhancement in $J_c$ under magnetic field. which suggests enhancement in workability and grain connectivity with several metal powder addition.

• 한국자기학회지
• /
• 제6권4호
• /
• pp.218-224
• /
• 1996

새로운 고성능 자심용 연자성 합금을 개발하기 위해, 급냉응고 방식에 의해 제조된 $Fe_{83-x}Al_{x}Nb_{5}B_{12}(X=1~5at%)$ 합금의 결정화거동 및 자기적 특성을 조사하였다. 3at% Al의 $Fe_{80}Al_{3}Nb_{5}B_{12}$ 합금이 조사된 Fe-Al-Nb-B계 합금중에서 가장 우수한 연자기 특성을 가지며, 이때 미세한 $\alpha-Fe$상 결정립 조직을 가지는 것으로 판명되었다. 또, 이 조성의 합금에 1 at%의 Cu를 첨가하면, 약 6~7 nm정도의 크기를 가지는 극히 미세한 결정립의 $\alpha-Fe$ 상조직이 얻어졌으며 이에 따라 대단히 현저한 연자기 특성의 향상이 실현되었다. 이때 초미세 결정구조 $Fe_{79}Al_{3}Nb_{5}B_{12}Cu_{1}$ 합금의 자기적 특성은 다음과 같다 : ${\mu}_{eff}(1\;kHz)=26,000,\;B_{10}=1.45\;T,\;H_{c}=25\;mOe,\;P_{c}(100\;kHz,\;0.2\;T)=55\;W/kg$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권10호
• /
• pp.467-474
• /
• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국분말재료학회지
• /
• 제23권6호
• /
• pp.432-436
• /
• 2016

We investigate the microstructural and magnetic property changes of $DyH_2$, $Cu+DyH_2$, and $Al+DyH_2$ diffusion-treated NdFeB sintered magnets with the post annealing (PA) temperature. The coercivity of all the diffusion-treated magnets increases with increasing heat treatment temperature except at $910^{\circ}C$, where it decreases slightly. Moreover, at $880^{\circ}C$, the coercivity increases by 3.8 kOe in Cu and 4.7 kOe in Al-mixed $DyH_2$-coated magnets, whereas this increase is relatively low (3.0 kOe) in the magnet coated with only $DyH_2$. Both Cu and Al have an almost similar effect on the coercivity improvement, particularly over the heat treatment temperature range of $790-880^{\circ}C$. The diffusivity and diffusion depth of Dy increases in those magnets that are treated with Cu or Al-mixed $DyH_2$, mainly because of the comparatively easy diffusion path provided by Cu and Al owing to their solubility in the Nd-rich grain boundary phase. The formation of a highly anisotropic $(Nd,\;Dy)_2Fe_{14}B$ phase layer, which acts as the shell in the core-shell-type structure so as to prevent the reverse domain movement, is the cause of enhanced coercivity of diffusion-treated Nd-Fe-B magnets.

• 한국세라믹학회지
• /
• 제28권4호
• /
• pp.261-268
• /
• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.