• Title/Summary/Keyword: B.V.P

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A CHARACTERIZATION OF WEIGHTED BERGMAN-PRIVALOV SPACES ON THE UNIT BALL OF Cn

  • Matsugu, Yasuo;Miyazawa, Jun;Ueki, Sei-Ichiro
    • Journal of the Korean Mathematical Society
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    • v.39 no.5
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    • pp.783-800
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    • 2002
  • Let B denote the unit ball in $C^n$, and ν the normalized Lebesgue measure on B. For $\alpha$ > -1, define $dv_\alpha$(z) = $c_\alpha$$(1-\midz\mid^2)^{\alpha}$dν(z), z $\in$ B. Here $c_\alpha$ is a positive constant such that $v_\alpha$(B) = 1. Let H(B) denote the space of all holomorphic functions in B. For $p\geq1$, define the Bergman-Privalov space $(AN)^{p}(v_\alpha)$ by $(AN)^{p}(v_\alpha)$ = ${f\inH(B)$ : $\int_B{log(1+\midf\mid)}^pdv_\alpha\;<\;\infty}$ In this paper we prove that a function $f\inH(B)$ is in $(AN)^{p}$$(v_\alpha)$ if and only if $(1+\midf\mid)^{-2}{log(1+\midf\mid)}^{p-2}\mid\nablaf\mid^2\;\epsilon\;L^1(v_\alpha)$ in the case 1<p<$\infty$, or $(1+\midf\mid)^{-2}\midf\mid^{-1}\mid{\nabla}f\mid^2\;\epsilon\;L^1(v_\alpha)$ in the case p = 1, where $nabla$f is the gradient of f with respect to the Bergman metric on B. This is an analogous result to the characterization of the Hardy spaces by M. Stoll [18] and that of the Bergman spaces by C. Ouyang-W. Yang-R. Zhao [13].

POSITIVE SOLUTION FOR A CLASS OF NONLOCAL ELLIPTIC SYSTEM WITH MULTIPLE PARAMETERS AND SINGULAR WEIGHTS

  • AFROUZI, G.A.;ZAHMATKESH, H.
    • Journal of applied mathematics & informatics
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    • v.35 no.1_2
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    • pp.121-130
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    • 2017
  • This study is concerned with the existence of positive solution for the following nonlinear elliptic system $$\{-M_1(\int_{\Omega}{\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^pdx)div({\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^{p-2}{\nabla}u)\\{\hfill{120}}={\mid}x{\mid}^{-(a+1)p+c_1}\({\alpha}_1A_1(x)f(v)+{\beta}_1B_1(x)h(u)\),\;x{\in}{\Omega},\\-M_2(\int_{\Omega}{\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^qdx)div({\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^{q-2}{\nabla}v)\\{\hfill{120}}={\mid}x{\mid}^{-(b+1)q+c_2}\({\alpha}_2A_2(x)g(u)+{\beta}_2B_2(x)k(v)\),\;x{\in}{\Omega},\\{u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}$ is a bounded smooth domain of ${\mathbb{R}}^N$ with $0{\in}{\Omega}$, 1 < p, q < N, $0{\leq}a$ < $\frac{N-p}{p}$, $0{\leq}b$ < $\frac{N-q}{q}$ and ${\alpha}_i,{\beta}_i,c_i$ are positive parameters. Here $M_i,A_i,B_i,f,g,h,k$ are continuous functions and we discuss the existence of positive solution when they satisfy certain additional conditions. Our approach is based on the sub and super solutions method.

박막태양전지 TCO/P 버퍼층 활성화를 위한 P-layer 최적화 Simulation

  • Jang, Ju-Yeon;Baek, Seung-Sin;Kim, Hyeon-Yeop;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.91-91
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    • 2011
  • 박막태양전지의 높은 효율개선을 위해 TCO층과 p-layer 사이에 buffer layer를 넣어 Voc와 FF를 개선하는 연구가 진행되고 있다. 이에 buffer layer의 활성화 정도를 높이기 위해 p-layer을 최적화 시키고자한다. 이 실험에서 a-Si:B에 N2O를 도핑시켜 Bandgap Energy 2.0 eV, Activation Energy 0.4 eV인 a-SiOx:B 막을 제작하여 buffer layer로 사용하였고 이 buffer layer에 의한 cell의 효율 향상을 최적화 하기위해 ASA simulation을 이용해 p-layer의 Bandgap Energy와 Activation Energy를 가변 하여 보았다. 실험결과 p-layer의 Bandgap Energy 1.95 eV에서 buffer layer와 p-layer사이에서의 barrier가 최소가 됨을 확인 할 수 있었고 Actication Energy 0.5 eV에서 가장 높은 Voc를 가짐을 알 수 있었다. 본 연구를 통해 p-layer의 Bandgap Energy 1.95 eV, Activation Energy 0.5 eV에서 buffer layer를 활성화시키기 위한 p-layer의 최적화 조건을 구현해 볼 수 있었다.

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ON THE GREATEST COMMON DIVISOR OF BINOMIAL COEFFICIENTS

  • Sunben Chiu;Pingzhi Yuan;Tao Zhou
    • Bulletin of the Korean Mathematical Society
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    • v.60 no.4
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    • pp.863-872
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    • 2023
  • Let n ⩾ 2 be an integer, we denote the smallest integer b such that gcd {(nk) : b < k < n - b} > 1 as b(n). For any prime p, we denote the highest exponent α such that pα | n as vp(n). In this paper, we partially answer a question asked by Hong in 2016. For a composite number n and a prime number p with p | n, let n = ampm + r, 0 ⩽ r < pm, 0 < am < p. Then we have $$v_p\(\text{gcd}\{\(n\\k\)\;:\;b(n)1\}\)=\{\array{1,&&a_m=1\text{ and }r=b(n),\\0,&&\text{otherwise.}}$$

The bio-complex "reaction pattern in vertebrate cells" reduces cytokine-induced cellular adhesion molecule mRNA expression in human endothelial cells by attenuation of NF-kappaB translocation

  • Ronnau, Cindy;Liebermann, Herbert E. H.;Helbig, Franz;Staudt, Alexander;Felix, Stephan B.;Ewert, Ralf;Landsberger, Martin
    • BMB Reports
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    • v.42 no.2
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    • pp.106-112
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    • 2009
  • The bio-complex "reaction pattern in vertebrate cells"(RiV) is mainly represented by characteristic exosome-like particles - probably as reaction products of cells to specific stress. The transcription factor NF-kappaB plays a central role in inflammation. We tested the hypothesis that RiV particle preparations (RiV-PP) reduce cellular adhesion molecule (CAM) expression (ICAM-1, VCAM-1, E-selectin) by the attenuation of NF-kappaB translocation in human umbilical vein endothelial cells (HUVEC). After 4 hours, pre-incubation of HUVEC with RiV-PP before stimulation with TNF-alpha significantly reduced ICAM-1 (65.5${\pm}$10.3%) and VCAM-1 (71.1${\pm}$12.3%) mRNA expression compared to TNF-alpha-treated cells (100%, n=7). ICAM-1 surface expression was significantly albeit marginally reduced in RiV/TNF-alpha- treated cells (92.0${\pm}$5.6%, n=4). No significant effect was observed on VCAM-1 surface expression. In RiV/TNF-alpha-treated cells (n=4), NF-kappaB subunits p50 (85.7${\pm}$4.1%) and p65 (85.0${\pm}$1.8%) nuclear translocation was significantly reduced. RiV-PP may exert an anti-inflammatory effect in HUVEC by reducing CAM mRNA expression via attenuation of p50 and p65 translocation.

A Study on Ultra-Shallow Junction Formation using Upgraded MDRANGE (향상된 MDRANGE을 사용한 초미세 접합 형성에 관한 연구)

  • 강정원;강유석
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.585-588
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    • 1998
  • We investigated the ultra-low energy B, P, and As ion implantation using ungraded MDRANGE code to form nanometer junction depths. Even at the ultra-low energies that were simulated in paper, it was found that channeling cases must be carefully considered. In the cases of B, channeling occurred above 500 eV, in the cases of P, channeling occurred above 1 keV, and in the cases of As, channeling occurred above 2 keV. Comparing 2D dopant profiles of 1 keV B, 2 keV P, and 5 keV As with tilts, we demonstrated that most channeling cases occurred not lateral directions but depth directions. Through thus results, even below 5 keV energy ion implant considered here, it is estimated that channeling effects are important in the formation of nanometer junction depths.

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A Study on the Performance Analysis of Wireless Networks for Mobile Convergence in V2V Environments (차량간 통신 환경에서의 모바일 컨버전스를 위한 무선 네트워크 성능 분석에 관한 연구)

  • Cho, Ki-Young;Nam, Ho-Seok;Kim, Seung-Cheon;Kim, Jun-Nyun
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.11 no.3
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    • pp.161-168
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    • 2011
  • This paper provides the performance measurement and analysis of Wireless LAN IEEE 802.11 in a mobile environment. The performances of IEEE802.11b/g and IEEE802.11p designed for Vehicle-to-Vehicle(V2V) communication are measured and analyzed. Diameter of communication and link access time are compared under variation of speed of the vehicle.

A CMOS Linear Tunable Transconductor (CMOS 선형 가변 트랜스컨덕터)

  • 임태수;최태섭;사공석진
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.11
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    • pp.57-62
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    • 1998
  • In this paper, tunable transconductor shows good linearity over a wide input voltage range are proposed. The proposed transconductor employ operating in the nonsaturation(ie., linear) region to improve circuit simplicity and tunability and 6.8V$\_$p-p/ wide input range. Also the circuit employ source-coupled differential pair to provide true differential input and can achieve both positive and negative transconductance values. The proposed circuits are implemented using a 1.2 $\mu\textrm{m}$ single poly double metal n-well CMOS technology. The THD characteristic of proposed circuit is less than 1% for a differential input voltage of up to 6V$\^$p-p/ when supply bias condition is V$\_$DD/=-V$\_$ss/=5V, I$\_$B/=20, 40${\mu}$A, and frequency of input signal is 1KHz.

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Strong Roman Domination in Grid Graphs

  • Chen, Xue-Gang;Sohn, Moo Young
    • Kyungpook Mathematical Journal
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    • v.59 no.3
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    • pp.515-523
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    • 2019
  • Consider a graph G of order n and maximum degree ${\Delta}$. Let $f:V(G){\rightarrow}\{0,1,{\cdots},{\lceil}{\frac{{\Delta}}{2}}{\rceil}+1\}$ be a function that labels the vertices of G. Let $B_0=\{v{\in}V(G):f(v)=0\}$. The function f is a strong Roman dominating function for G if every $v{\in}B_0$ has a neighbor w such that $f(w){\geq}1+{\lceil}{\frac{1}{2}}{\mid}N(w){\cap}B_0{\mid}{\rceil}$. In this paper, we study the bounds on strong Roman domination numbers of the Cartesian product $P_m{\square}P_k$ of paths $P_m$ and paths $P_k$. We compute the exact values for the strong Roman domination number of the Cartesian product $P_2{\square}P_k$ and $P_3{\square}P_k$. We also show that the strong Roman domination number of the Cartesian product $P_4{\square}P_k$ is between ${\lceil}{\frac{1}{3}}(8k-{\lfloor}{\frac{k}{8}}{\rfloor}+1){\rceil}$ and ${\lceil}{\frac{8k}{3}}{\rceil}$ for $k{\geq}8$, and that both bounds are sharp bounds.