• 제목/요약/키워드: B-doping

검색결과 254건 처리시간 0.023초

Effect of Recombinant Bovine Somatotropin (${\gamma}$ bST) Administration on bST Levels in Milk of Cows

  • Park, Jeongeun;Park, Myung-Ja;Jaeho Chin;Park, Jongsei;Kim, Jooho
    • 한국응용약물학회:학술대회논문집
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    • 한국응용약물학회 1995년도 춘계학술대회
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    • pp.127-127
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    • 1995
  • The present study was conducted to examine the effect of recombinant bovine somatotropin(${\gamma}$ bST), which was administered to cow to promote milk production, on bST levels in milk. Fourteen cows were divided into two groups: 1) control cows received neither y bST nor vehicle, 2) treated cows were administered twice at two-week interval with 500mg ${\gamma}$ bST each cow by subcutaneous injection. Milk samples were taken on day 0 (prior to injection), day 7 (7 days after 1st injection), day 21 (7 days after 2nd injection) and day 35 (21 days after 2nd injection).

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Enhanced superconducting properties of MgB2 by doping the carbon quantum dots

  • K.C., Chung;S.H., Jang;Y.S., Oh;S.H., Kang
    • 한국초전도ㆍ저온공학회논문지
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    • 제24권4호
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    • pp.55-58
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    • 2022
  • Carbon-based doping to MgB2 superconductor is the simplest approach to enhance the critical current densities under magnetic fields. Carbon quantum dots is synthesized in this work as a carbon provider to MgB2 superconductors. Polyvinyl Pyrrolidone is pyrolyzed and dispersed in dimethylfomamide solvent as a dopant to the mixture of Mg and B powders. Doped MgB2 bulk samples clearly show the decrease of a-axis lattice constant, grain refinements, and broadening of FWHM of diffraction peaks compared to un-doped MgB2 possibly due to the carbon substitution and/or boron vacancy at the boron site in MgB2 lattice. Also, high-field Jc for the doped MgB2 is enhanced significantly with the crossover about 3 T at 5 & 20 K when increasing the doping of carbon quantum dots.

RF 마그네트론 스퍼터링법으로 증착한 B-doped ZnO 박막의 전기 및 광학적 특징 (Electrical and Optical properties of B-doped ZnO films Deposited by RF Magnetron Sputtiering)

  • 임주수;이재신
    • 한국세라믹학회지
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    • 제35권1호
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    • pp.17-22
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    • 1998
  • B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

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Binary Doping of N-B and N-P into Graphene: Structural and Electronic properties

  • Kim, Hyo seok;Kim, Seong Sik
    • EDISON SW 활용 경진대회 논문집
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    • 제2회(2013년)
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    • pp.256-259
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    • 2013
  • We investigate co-doping effects of conjugated P-N B-N with increasing of N concentration in the graphene sheets using a first principles based on the density functional theory. N doping sites of the graphene consider two possible sites (pyridinic and porphyrin-like). Energy calculation shows that additional doping of B atom in the porphyrin-like N doped graphene ($V+B-N_x$) is hard to form. At the low chemical potential of N, one N atom with additional doping in the graphene ($V+P-N_1$, $P/B-N_1$) has low formation energy on the other hand at high chemical potential of N, high concentration of N ($V+P-N_4$, $P/B-N_3$) in the graphene is governing conformation. From the results of electronic band structure calculation, it is found that $V+P-N_4$ and $P/B-N_3$ cases change the Fermi energy therefore type change is occurred. On the other hand, the cases of $V+P-N_1$ and N+B recover the electronic structure of pristine graphene.

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Key Factors for the Development of Silicon Quantum Dot Solar Cell

  • 김경중;박재희;홍승휘;최석호;황혜현;장종식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.207-207
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    • 2012
  • Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

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Effects of B Doping on Structural, Optical, and Electrical Properties of ZnO Nanorods Grown by Hydrothermal Method

  • Kim, Soaram;Nam, Giwoong;Park, Hyunggil;Yoon, Hyunsik;Kim, Byunggu;Kim, Jin Soo;Kim, Jong Su;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.337-337
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    • 2013
  • ZnO seed layers were deposited on a quartz substrate using the sol-gel method, and B-doped ZnO (BZO) nanorods with different B concentrations ranging from 0 to 2.5 at.% were grown on the ZnO seed layers by the hydrothermal method. The structural, optical, electrical propertiesof the ZnO and BZO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet-visible spectroscopy, and hall effect. The ZnO and BZO nanorods grew well aligned on the surface of the quartz substrates. From the XRD data, it can be seen that the B doping is responsible for the distortion of the ZnO lattice. The PL spectra show near-band-edge emission and deep-level emission, and they also show that B doping significantly affects the PL properties of ZnO nanorods. The optical band gaps are changed by B doping, and thus the Urbach energy value changed with the optical band gap of the ZnO nanorods. From the hall measurements, it can be observed that the values of electrical resistivity, carrier concentration, and mobility are changed by B doping.

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플라즈마 화학증착법으로 제조된 수소화된 비정질 탄화실리콘 박막의 물성에 대한 붕소의 도핑효과 (Effect of boron doping on the chemical and physical properties of hydrogenated amorphous silicon carbide thin films prepared by PECVD)

  • 김현철;이재신
    • 한국진공학회지
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    • 제10권1호
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    • pp.104-111
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    • 2001
  • $SiH_4$, $CH_4$, $B_2H_6$ 혼합기체를 이용하여 플라즈마 화학증착법으로 비정질 탄화실리콘(a-SiC:H) 박막을 증착하였다. 기상 doping 농도를 0에서 $2.5\times10^{-2}$ 범위에서 변화시켜 얻은 박막의 물성을 SEM, XRD, Raman 분광법, FTIR, SIMS, 광흡수도와 전기전도도 분석을 통하여 살펴보았다. $B_2H_6$/($CH_4+SiH_4$) 기체유량비가 증가할수록 붕소의 도핑효율와 미세결정성은 감소하였다. 증착 중 $B_2H_6$ 기체가 첨가됨에 따라 비정질 탄화실리콘 박막의 Si-C-H 결합기의 강도는 감소하였으며, 이의 영향으로 박막내의 수소함량은 $B_2H_6/(SiH_4+CH_4$) 기체 유량비가 증가함에 따라 16.5%에서 7.5%로 단조감소하였다. $B_2H_6(CH_4+SiH_4$) 기체유량비가 증가할수록 a-SiC:H 박막의 광학적 밴드갭과 전기활성화 에너지는 감소하였고, 전기전도도는 증가하였다.

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$MgB_2$ bulk의 미세구조와 임계전류밀도에 미치는 polyacrylic acid doping 효과 (Effects of Polyacrylic Acid Doping on Microstructure and Critical Current Density of $MgB_2$ Bulk)

  • 이승묵;황수민;이창민;주진호;김찬중
    • Progress in Superconductivity
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    • 제11권2호
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    • pp.87-91
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    • 2010
  • We fabricated the polyacrylic acid (PAA)-doped $MgB_2$ bulks and characterized their lattice parameters, actual C substitutions, microstructures, and critical properties. The boron (B) powder was mixed with PAA using N,N-dimethylformamide as solvent and then the solution was dried out at $200^{\circ}C$ and crushed. The C treated B powder and magnesium powder were mixed and compacted by uniaxial pressing at 500 MPa, followed by sintering at $900^{\circ}C$ for 1 h in high purity Ar atmosphere. We observed that the PAA doping increased the MgO amount but decreased the grain size, a-axis lattice constant, and critical temperature ($T_c$), which is indicative of the C substitution for B sites in $MgB_2$. In addition, the critical current density ($J_c$) at high magnetic field was significantly improved with increasing PAA addition: at 5 K and 6.6 T, the $J_c$ of 7 wt% PAA-doped sample was $6.39\;{\times}\;10^3\;A/cm^2$ which was approximately 6-fold higher than that of the pure sample ($1.04\;{\times}\;10^3\;A/cm^2$). This improvement was probably due to the C substitution and the refinement of grain size by PAA doping, suggesting that PAA is an effective dopant in improving $J_c$(B) performance of $MgB_2$.

UV light generation by CsLiB6O10 and effect of doping on crystal properties

  • Sasaki, Takatomo
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.462-487
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    • 1996
  • We report on the fourth and fifth harmonics generations of Nd:YAG laser radiation realized in CsLiB6O10(CLBO). The values of 500 mJ and 230 mJ at 266 nm and 213 nm were obtained from 2200 mJ of fundamental energy. Doping of CLBO has been carried out and the Al doping was found to give rise to an enhancement of mechanical and chemical properties.

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