• Carbon letters
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• v.21
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• pp.16-22
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• 2017

Cobalt was electrodeposited onto chemical vapor deposition (CVD) graphene/Si/$SiO_2$ substrates, during different time intervals, using an electrolyte solution containing a low concentration of cobalt sulfate. The intention was to investigate the details of the deposition process (and the dissolution process) and the resulting magnetic properties of the Co deposits on graphene. During and after electrodeposition, in-situ magnetic measurements were performed using an (AGFM). These were followed by ex situ morphological analysis of the samples with ${\Delta}t_{DEP}$ 30 and 100 s by atomic force microscopy in the non-contact mode on pristine CVD graphene/$SiO_2$/Si. We demonstrate that it is possible to electrodeposit Co onto graphene, and that in-situ magnetic measurements can also help in understanding details of the deposition process itself. The results show that the Co deposits are ferromagnetic with decreasing coercivity ($H_C$) and demonstrate increasing magnetization on saturation ($M_{SAT}$) and electric signal proportional to remanence ($M_r$), as a function of the amount of the electrodeposited Co. It was also found that, after the end of the dissolution process, a certain amount of cobalt remains on the graphene in oxide form (this was confirmed by X-ray photoelectron spectroscopy), as suggested by the magnetic measurements. This oxide tends to exhibit a limited asymptotic amount when cycling through the deposition/dissolution process for increasing deposition times, possibly indicating that the oxidation process is similar to the graphene surface chemistry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.594-597
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• 1999

The new green and red phosphors for PDP application activated by T $b^{3+}$ and E $u^{3+}$ were synthesized, and their photoluminance properties were investigated. It was found that the brightness of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ green phosphor under 147nm VUV irradiation was higher than that of commercial Z $n_2$ $SiO_4$:M $n^{2+}$ phosphor. But the emitting intensity of A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ red phosphor was inferior to the commercial (Y,Gd)B $O_3$:E $u^{3+}$. $Al_3$Gd $B_4$ $O_{12}$ Phosphor had a strong excitation band at 160nm associated with the host absorption, and also the photoluminance excitation intensity of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ was higher than that of Z $n_2$ $SiO_4$:M $n^{2+}$, but the intensity of $Al_3$Gd $B_4$ $O_{12}$ :E $u^{3+}$ phosphor was smaller than (Y,Gd)B $O_3$:E $u^{3+}$ phosphor In the VUV range. C $e^{3+}$ co-doping in A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ and substitution of $Al^{3+}$ by G $a^{3+}$ A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ phosphor were tried, but they did not improved the optical property .d the optical property .ty .

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.154-155
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• 2005

Multi-layer film of $MgO/(FePt-B)_{50nm}/ MgO$ was deposited on Si(100) substrates by RF magnetron sputtering. The boron chips were uniformly placed oil tile FePt target. The boron content of thin film was found to be about 5, 10, 15, 25 and $33 at\%$ by using a CAMECA SX-51 wavelength dispersive spectroscopy (WDX). It is observed that X-ray diffraction patterns of FePt-B film by post-annealing exhibited a transformation from disordered fcc structure to ordered $Ll_0$ phase with fct structure from around $400^{\circ}C$. By adding B, annealing temperature for ordering is about $200^{\circ}C$ lower than that of pure FePt. This remarkable decrease of the annealing temperature is closely related to the high diffusivities of Fe and Pt associated with the defects caused by movements of B atoms. The maximum coercivity(Hc) for FePt films was found to be ${\~}$13 kOe after annealing at $600^{\circ}C$ for 1hr.

• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.185-191
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• 1998

Magnetic domain structure and static magnetic properties were investigated in the ultra thin 3%Si-Fe strip wound cores when the strips were wound and annealed to relief the stress. The elastic and plastic deformation due to the radius of curvature was also investigated for the cores. At the as-wound state, the maze pattern domain structure was generated on the concave surface of the core and 180$^{\circ}$ domain wall was recovered by annealing 600 $^{\circ}C$$\times$30 min. After annealed by 900 $^{\circ}C$$\times$30 min, Hc of strip-wound cores was not reached to the $H_c$ of the strip even at the cores of elastic deformation region. It is necessary to relief the local stress remained in the core when the cores were manufactured for the application of ultra-thin 3%Si-Fe strip.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.81-85
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• 2007

MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1165-1166
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• 2006

An experiment was carried out to investigate the effect of Ba Stearate as a reducing agent on the magnetic and physical properties of anisotropic $BaFe_2-W$ type ferrite magnets. It was found that the magnetic properties of $BaO{\cdot}8.5Fe_2O_3$ were improved by adding 0.3 wt% of Ba Stearate, 0.5 wt% of $SiO_2$, and 0.5 wt% of CaO together. The optimum conditions for making magnets were as follows; semisintering condition: $1350^{\circ}C{\times}4.0$ h in nitrogen gas atmosphere, drying condition: $180^{\circ}C{\times}2.0$ h in air, sintering condition: $1160^{\circ}C{\times}1.5$ h in nitrogen gas atmosphere. Magnetic and physical properties of a typical sample were $J_m$ = 0.46 T, $J_r$ = 0.43 T, $H_{cJ}$ = 182.3 kA/m, $H_{cB}$ = 177.2 kA/m, $(BH)_{max}$ = 33.8 kJ/$m^3$, $T_C$ = $495^{\circ}C$ and $K_A$ = $2.65{\times}10^5\;J/m^3$ and $H_A$ = 1332 kA/m.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.731-735
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• 2001

S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{\circ}C$ to 85$0^{\circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{\circ}C$ and rod-like grains grew above 75$0^{\circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{\circ}C$ are 11.60$\mu$C/$\textrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{\circ}C$ are 213 and 1.01x10$^{-8}$ A/$\textrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.994-995
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• 2006

The microstructure of the extruded Al-20Si bars showed a homogeneous distribution of eutectic Si and primary Si particles embedded in the Al matrix. The grain size of ${\alpha}-Al$ varied from 150 to 600 nm and the size of the eutectic Si and primary Si in the extruded bars was about 100 - 200 nm. The room temperature tensile strength of the alloy with a powder size $<26{\mu}m$ was 322 MPa, while for the coarser powder ($45-106{\mu}m$) it was 230 MPa. With decreasing powder size from $45-106{\mu}m$ to $<26{\mu}m$, the specific wear of all the alloys decreased significantly at all sliding speeds due to the higher strength achieved by ultrafine-grained constituent phases. The fracture mechanism of failure in tension testing and wear testing was also studied.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.510-516
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• 1997

반응성RF 마그네트론 스퍼터링 법으로 상온에서 c-축으로 우선 배향된 AIN 박막을 여러 기판 위에 증착하였다. SiO$_{2}$/Si, Si$_{3}$N $_{4}$Si, Si(100), Si(111)그리고 $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에서 AIN(0002)로킹커브 피크의 표준편차는 각각 2.6˚, 3.1˚2.6˚, 2.5˚ 그리고 2.1˚ 의 값을 나타내었다. $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에 증착된 AIN박막은 epitaxial 성장을 나타내었다. Si기판에 증착된 AIN박막에서 측정된 비저항과 1MHz 주파수에서 측정된 유전상수의 값은 각각 $10^{11}$Ωcm와 9.5였다. IDT/AIN/$\alpha$-AI$_{2}$O$_{3}$(0001)구저를 갖는 지연선 소자의 표면 탄성과 특성을 측정하였다. 상 속도, 전기기계 결합계수 그리고 전파손실은 H/λ가 0.17-0.5 범위에서 각각 5448-5640m/s, 0.13-0.17% 그리고 0.41-0.64dB/λ의 값을 나타내었다.다.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.603-607
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• 2010

Turquoise blue pigment of Vanadium-zircon blue (DCMA number 14-42-2), which was already commercialized, was stable to be reproduced but insufficient to give strong blue. However, it possible to obtain more intense blue by partially substituting cobalt ions into the willemite($Zn_2SiO_4$) lattice classified into DCMA number 7-10-2 for blue ceramic pigment. By the composition of willemite $Co_xZn_{2-x}SiO_4$(X=0.01, 0.03, 0.05, 0.07, 0.09 mole), this study used reagent grade zinc oxide, cobalt oxide and silicon dioxide as starting materials, carrying out the synthesis with solid reaction method by adding $H_3BO_3$ as a mineralizer. The firing temperature was between $1200^{\circ}C$ and $1400^{\circ}C$. The characteristics of synthesized pigment were analyzed by X-ray diffraction, Raman spectroscopy and SEM and the characteristics of color tones were analyzed by UV-Vis spectroscopy and CIE-$L^*a^*b^*$ measurement. As a result, the optimal composition was $Zn_{1.95}Co_{0.05}$ with 1wt% of $H_3BO_3$ as a mineralizer and firing condition was $1350^{\circ}C$/3 h. $L^*a^*b^*$ value was 29.25, 41.03, -59.93 for on glaze pigment and 37.03, 36.41, -60.03 for under glaze pigment.