• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.604-610
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• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.340-345
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• 2003

B $i_2$ $O_3$-Ti $O_2$ composite dielectric ceramics have been prepared by a conventional solid state ceramic route. The composite ceramics were prepared with starting materials of different origin and the microwave dielectric properties were investigated. The sintered ceramics were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray microanalysis, Raman and microwave methods. Structural and microstructural analyses identified two separate phases: Ti $O_2$(rutile) and B $i_2$ $Ti_4$0$_{11}$. The separate grains of titania and bismuth titanate were distributed uniformly in the ceramic matrix. The composition 0.88Ti $O_2$-0.12B $i_2$ $Ti_4$ $O_{11}$ was found to have a Q$\times$f of 9300 GHz (measured at a frequency of 3.9 GHz), a temperature coefficient of frequency, $\tau$$_{cf}$ near zero and a high relative permittivity, $\varepsilon$r of 83. The microwave dielectric properties were measured down to 20$^{\circ}$K K. The quality factor increased on cooling the ceramic samples.les.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.207-213
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• 1993

Pb(Z $r_{0.54}$, $Ti_{0.46}$) $O_{3}$에 B $i_{2}$ $O_{3}$를 0.0wt%까지 첨가하여 미세구조, 유전, 압전, 성질에 미치는 영향을 고찰하였다. B $i_{2}$ $O_{3}$의 고용범위는 약 0.5~0.7wt%정도 이었고 B $i_{2}$ $O_{3}$ 첨가량이 증가함에 따라서 결정립의 크기가 감소하였다. B $i_{2}$ $O_{3}$첨가량이 증가함에 따라 고용한계까지는 $d_{33}$ , tan .delta., .xi.$_{r}$(분극후)값이 증가하였으며 Qm값과 밀도는 감소하였다. $K_{p}$ 값은 B $i^{3+}$ 가 P $b^{2+}$를 치환하므로 형성되는 Pb공공의 형성에 의해 자발분극이 증가됨에 따라 증가하였다.다.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.99.1-99
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• 2003

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.515-519
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• 2011

The purpose of this study was to determine the optimal firing condition and composition for $Al_2TiO_5$ crystal, which is suitable for stable coloration in glazes at high temperatures, using $Cr_2O_3$ as chromophore for the synthesis of $Al_2TiO_5$ system pigments. $Al_2TiO_5$ has a high refractive index and good solubility of chromophore in the $Al_2TiO_5$ lattice, making this structure a good candidate for the development of new ceramic pigments. Pigments were synthesized by using $Al_2O_3$ and $TiO_2$ mainly. Various amounts of $Cr_2O_3$ such as 0.01, 0.02, 0.03, 0.04 and 0.05 mole were also added. Each compound was synthesized at $1300^{\circ}C$, $1400^{\circ}C$, and $1500^{\circ}C$ for 2 hours and cooled naturally. The crystal structure, solubility limit, and color of the synthesized pigments were analyzed by XRD, SEM, Raman spectroscopy, UV and UV-vis. The changes in color as the result of applying 6 wt% of the synthesized pigments to lime barium glaze were expressed as CIE-L*a*b* values. A $Cr_2O_3$ 0.03 mole doped $Al_2TiO_5$ brown pigment was successfully synthesize at $1400^{\circ}C$, and the values of CIE-L*a*b* parameters were L* = 44.62, a* = 3.10, and b* = 17.25. In the case of the pigment synthesized at $1500^{\circ}C$, the brown color was obtained at 0.01 mole and 0.02 mole $Cr_2O_3$, and the CIE-L*a*b* values were 55.34, 1.73, 28.64, and 49.39, 0.51, 21.33, respectively. At $1500^{\circ}C$, the maximum limit of solid solution was 0.03 mole $Cr_2O_3$. The glazed sample showed green color, and the values of the CIEL* a*b* parameters were L* = 45.69, a* = -0.98, and b* = 20.38.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.30-36
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• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1046-1054
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• 2001

Effects of B$_2$O$_3$and CuO addition on the microwave dielectric properties of the PbWO$_4$-TiO$_2$ceramics were investigated in order to use this material as an LTCC material for fabrication of a multilayered RF passive components module. We found that PbWO$_4$could be used as an LTCC material because of its low sintering temperature (8$50^{\circ}C$) and fairy good microwave dielectric properties($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz and $\tau$$_{f}$ =-31 ppm/$^{\circ}C$). In order to stabilize $\tau$$_{f}$ of PbWO$_4$, TiO$_2$was added to the PbWO$_4$and the mixture was sintered at 8$50^{\circ}C$. A near zero $\tau$$_{f}$ value (+0.2 ppm/$^{\circ}C$) was obtained with 8.7 mol% TiO$_2$addition. $\varepsilon$r and Q$\times$f$_{0}$ values were 22.3 and 21400 GHz, respectively. It was believed that the decrement of Q$\times$f$_{0}$ value with TiO$_2$addition was resulted from increasing grain boundary. In order to improve Q$\times$f$_{0}$, various amounts of B$_2$O$_3$and CuO were added to the 0.913PbWO$_4$-0.087TiO$_2$mixture. The optimum amount of CuO was 0.05 wt%. At this addition, the 0.913PbWO$_4$-0.087TiO$_2$ceramic showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$ =-2.2ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32900 GHz after sintered at 8$50^{\circ}C$. In case of B$_2$O$_3$addition, the optimum amount range was 1.0~2.5 wt% at which we could obtain following results; $\varepsilon$$_{r}$=20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, and $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$.

• Journal of Environmental Science International
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• v.15 no.1
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• pp.67-75
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• 2006

The degradation of Rhodamine B (RhB) in water was investigated in laboratory-scale experiments, using five advanced oxidation Processes (AOPs) $UV/H_2O_2$, lenten, photo-lenten, $UV/TiO_2,\;UV/TiO_2/H_2O_2$. The photodegradation experiments were carried out in a fluidized bed photoreactor equipped with an immersed 32 W UV-C lamp as light source. initial decolorization rate and COD removal efficiency were evaluated and compared. The results obtained showed that the initial decolorization rate constant was quite different for each oxidation process. The relative order of decolorization was: photo-fenton > $UV/TiO_2/H_2O_2$ > fenton > $UV/H_2O_2$ > $UV/TiO_2$ > UV > $H_2O_2$. The relative order of COD removal was different from decolorization: photo-fenten ${\fallingdotseq}$ $UV/TiO_2/H_2O_2\;>\;UV/TiO_2\;>\;fenton\;>\;UV/H_2O_2$. The Photo-lenten and $UV/TiO_2/H_2O_2$ processes seem to be appropriate for decolorization and COD removal of dye wastewater.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.