• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.77-83
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• 2002

In order to get low cost and portability, semiconductor gas sensor need to have low operating temperature and high sensitivity. $Fe_2O_3$ based sensors which were doped with metal oxide catalysts($MoO_3$, $V_2O_5$, $TiO_2$, and CdO) were fabricated by screen printing method. To improve electrical stability of sensors, the $Fe_2O_3$ sensors were annealed in $N_2$ at $700^{\circ}C$ for 2 hours. The $V_2O_5$ doped $Fe_2O_3$ sensor showed about $80{\sim}90%$ sensitivity at alcohol 1,000 ppm and have good selectivity to hydrocarbon gas and tobacco odors. The fabricated sensor and PIC-chip were employed for portable alarm system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.745-750
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• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.683-686
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• 1995

Using by the x-ray diffractometry(XRD), the thermomagnetic analysis(TMA), a scanning electron microscopy (SEM-EDX), we knew that the $(Sm_{0.5}RE_{0.5})Fe_{11}Ti$ (RE=Ce,Pr,Nd,Sm,Gd,Tb) compounds were formed to tetragonal $ThMn_{12}$-type structure having a uniaxial magnetocrystalline anisotropy with easy magnetization c-axis. The intrinsic magnetic properties of those were determined by fitting the two magnetization curves of experimental and calculation magnetization. The anisotropy constant $K_{1}$ of this compounds was in the range of $1.75\;-\;9.2\;MJ/m^{3}$ and approximately one order higher than $K_{2}$. $SmFe_{11}Ti$ had the highest anisotropy of $K_{1}\;=\;9.2\;MJ/m^{3}$, $K_{2}\;=\;0.4\;MJ/m^{3}$ and ${\mu}_{o}H_{A}=\;19.8\;T$ among the compounds, substitution of any other rare earth elements for Sm decreased magnetocrystalline anisotropy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.234-237
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• 2000

In this paper, the structural, dielectric and piezoelectric properties of the Pb[(S $b_{1}$2/N $b_{1}$2/)$_{0.035}$- $_Mn_{1}$3/N $b_{2}$3/)$_{0.065}$-(Z $r_{0.49}$, $Ti_{0.51}$)$_{0.90}$] $O_3$ ceramics were investigated with respect to the variation of the milling time. Grain size was decreased as the increase of milling time. As the milling time is increased, the particle size of the powder was decreased. Dielectric constant and electromechanical coupling factor (Qm)were slowly increased with the increase of milling time. The highest value of Qm was 1,497 at milling time 8 hour. Temperature coefficient of resonant frequency(TC $F_{r}$) was moved to positive side with the increase of milling time.e.e.e.e.e.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.3-5
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• 2008

The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Progress in Superconductivity and Cryogenics
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• v.7 no.1
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• pp.13-16
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• 2005

High temperature superconductor, $\YBa_2Cu_3O_{7-x}$ (YBCO) and ferroelectric, $\Ba_{0.1}Sr_{0.9}TiO_{3}$ (BST) multilayer thin films were deposited using on MgO(100) substrates pulsed laser deposition. The thin films exhibited only (001) peaks of YBCO and 1357 The HTS thin films demonstrated excellent zero resistance temperature of 92.5 K. We designed and fabricated HTS ferroelectric phase shifter using high frequency system simulator and standard photolithography method, respectively The HTS phase shifter shows a low insertion loss (2.97 dB) and large phase change ($\162^{circ}$) with 40 V do bias at 10 GHz. The HTS phase shifter shows 54 of figure of merit. These results can be applicable to phased anay antenna system for satellite communication services.

• Asian-Australasian Journal of Animal Sciences
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• v.21 no.2
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• pp.262-269
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• 2008

The aim of this study was to determine the effects of breeder age and stocking density on performance, carcass characteristics and some stress parameters (H-L ratio, serum glucose, cholesterol and triglyceride levels, tonic immobility test (TI), antibody production, relative asymmetry (RA) and external appearances). This experiment was carried out with 705 one-day old male broiler chicks (Ross 308) obtained from three different ages of broiler breeder (32, 48 and 61 wks). Each age group was randomly divided into two stocking density groups (11.9 and 17.5 broilers per $m^2$) with 5 replications per group. The experimental period was 6 weeks. Broilers from 32 wk-old breeders had lower initial weight (p<0.001), body weight gain of the first 3 week of rearing (p<0.01), the percentage of abdominal fat (p<0.001) and serum cholesterol level (p<0.01); higher percentage of gizzard (p<0.01) and longer TI duration (p<0.001) than those from 48 and 61 wk-old breeders. Broilers reared at 17.5 b/m2 had lower final BW, body weight gain, feed consumption, feather condition and foot health (p<0.001), higher percentage of heart, H-L ratio, serum glucose and cholesterol levels (p<0.001), and longer TI durations (p<0.001). There were no significant interactions in examined parameters except for feed to gain ratio between breeder age and stocking density.

• Electrical & Electronic Materials
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• v.6 no.5
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• pp.454-460
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• 1993

본 연구에서는 준강유전 특성을 갖는 xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$- (1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$ (x=8.5, 9.0[mol.%], y=65, 70[mol.%]) 세라믹을 2단 소성법으로 제작한 후, 조성 및 인가전계에 따른 전기광학 특성 및 광변조 특성을 측정하였다. 인가전계가 증가함에 따라 8.5/65/35 시편을 제외한 전조성에서 유효복굴절이 2차 함수적으로 변화하는 2차 전기광학 특성을 나타내었으며 2차 전기광학계수, 반파장전압 및 ON-OFF ratio는 9.0/65/35 시편에서 각각 6.17x$10^{-16}$[ $m^{2}$/ $v^{2}$], 136[V], 252의 가장 우수한 값을 나타내었다. 9.0/70/30, 9.0/65/35 및 8.5/70/30 시편에 대해 광변조 특성을 측정한 결과, 입사광의 세기를 인가전압에 의해 변조시킬 수 있음을 관찰하였다.다.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.95-101
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• 1995

Crystallizable glasses with precipitation of celsian, anorthite, wollastonite and gahnite were prepared for the purpose of insulating dielectric layers in devices such as integrated circuit substrates. The starting glasses were prepared by melting the batches for 1 hour at 1450.deg. C and then Quenching to a distilled water. And crystallization behavior of these glasses were studied by DTA, TMA, XRD analysis and by the measurement of dielectric properties. The overall composition of the glass-ceramic consists in weight percent of 30-35% A1$_{2}$O$_{3}$, 13-26% BaO, 5-21% CaO, 10-24% ZnO, 4.5-9.0% TiO$_{2}$ and 4-8% B$_{2}$O$_{3}$. As a result, in barium-rich glasses only celsian phase was developed in the range of 850-900.deg. C. Also, the thermal expansion coefficient, dielectric constant and quality factor of these glass-ceramics were 68*10$^{-7}$ /.deg. C, about 9 and more than 1000, respectively.