• The Journal of the Acoustical Society of Korea
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• 제25권2E호
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• pp.49-55
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• 2006

Compressional wave velocity (Vp), shear wave velocity (Vs), elastic and physical properties, and electrical resistivity for two core sediments obtained from Southeastern Yellow Sea Mud (SEYSM) were measured and computed. The sediments consist of homogeneous mud (mostly silt and clay) with shells and shell fragments. As a result, the mean grain size is uniform ($7.5-8.5{\Phi}$ throughout the core sediments. However, physical properties such as wet bulk density and porosity show slightly increasing and decreasing patterns with depth, compared to the mean grain size. The compressional (about 1475 m/s in average) and shear wave (about 60 m/s in average) velocities with depth accurately reflect the pattern of wet bulk density and porosity. Electrical resistivity is more closely correlated with compressional wave velocity than physical properties. The computed Vp/Vs and Poisson's ratios are relatively higher (more than 10) and lower (approximately 0.002) than Hamilton's (1979) data, respectively, suggesting the typical characteristics of soft and fully water-saturated marine sediments. Thus, the Vp/Vs ratio in soft and unconsolidated sediments is not likely sufficient to examine lithology and sediment properties. Relationships between the elastic constant and physical properties are correlated well. The elastic constants (Poisson's ratio, bulk modulus, shear modulus) given in this paper can be used to characterize soft marine sediments saturated with seawater.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.267-271
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• 1995

The electrical properties of (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ ceramics were studied. Specimens were prepared by the conventional mixed oxide method, and fired between 1300[.deg. C] - 1375[.deg. C], for 2[hr.]. The electrical and structural preperties of specimens were investigated with sintering temperature. Increasing the sintering temperature from 1300[.deg. C] to 1375[.deg. C], average grain size was increased from 2.61[.mu.m] to 4.53[.mu.m]. (S $r_{0.50}$P $b_{0.25}$B $a_{0.25}$)Ti $O_{3}$ specimen sintered at 1350[.deg. C] for two hours showed good dielectric constant(2147) and dielectric loss(1.7[%]) properties at 1[khz]. Sintered density and breakdown field strength were the highest value of 5.75[g/c $m^{3}$], 20[kV/cm], respectively. Dielectric properties with applied voltage were independent of the sintering temperature.temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1774-1776
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• 1999

The (1-x)$MgTiO_3-SrTiO_3$ (x=0,0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from $1300^{\circ}C$ to $1600^{\circ}C$, second phase was decreased and grain size was increased. The average grain size of the $0.8MgTiO_3-0.2SrTiO_3$ ceramics sintered at $1600^{\circ}C$ were $3.61{\mu}m$.

• 분석과학
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• 제11권4호
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• pp.316-320
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• 1998

An image analysis was used for the interpretation of microstructures of ferrous metal artifacts. For the purposes, various microstructural features such as average grain size, phase area, shape factor, and composition of the inclusions, were parameterized for the information about manufacturing techniques such as casting, heating and tempering. The carbon content was determined through the evaluation of the amount of pearlite phase. As the amount of pearlite phase increased the shape factor also increased. Grain size was relatively smaller in trans-section than in cross-section. The manufacturing direction was trans-sectional because the orientation of inclusions was elongated lengthwise. All inclusions was of silicate groups and the manufacturing temperature was estimated up to $1450^{\circ}C$.

• 한국재료학회지
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• 제16권9호
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• pp.578-583
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• 2006

We studied the physical properties of Ni-Zn ferrites by adding different chemicals such as $SO_4$, Cl, and $NO_3$. Specimens were prepared by the coprecipitation method and sintered at temperatures $950^{\circ}C,\;1,150^{\circ}C,\;and\;1,350^{\circ}C$, respectively. X-ray diffractions showed a spinel structure and the optical microscopy revealed grain size of 0.3 to 0.6 ${\mu}m$. The optimum sintering temperature to obtain fine, sintered microstructure depended on the additive : Cl and $NO_3\;at\;950^{\circ}C\;and\;SO_4\;at\;1,150^{\circ}C$. According to particle size analysis, higher magnetic permeability and magnetization value were observed with Cl and $NO_3\;than\;SO_4$. As sintering temperature was raised from $950^{\circ}C$ to $1,350^{\circ}C$, the average grain diameter, initial permeability and the magnetic moment also increased.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.172-175
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• 2006

Effects of deformation at austenite non-recrystallization region and cooling rate on the microstructure and mechanical properties of low carbon (0.06 wt. %) high strength low alloy steels have been investigated. Average grain size decreased and polygonal ferrite transformation promoted with increasing deformation amount due to increase of ferrite nucleation site. As cooling rate increased, the major microstructure changed from polygonal ferrite to acicular ferrite and the fraction of M/A constituents gradually increased. Discontinuous yielding occurred in highly deformed specimen due to the formation of polygonal ferrite. However, small grain size of highly deformed specimen caused lower ductile-to-brittle transition temperature than slightly deformed specimen.

• 한국표면공학회지
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• 제41권6호
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• pp.287-291
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• 2008

Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.794-799
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• 1997

Poly-Si films have been prepared by solid phase crystallization of LPCVD(low-pressure CVD) amorphous silicon. The crystallinity of poly-Si films has been derived from UV reflectance spectrum and lies in the range between 70% and 80% . From XRD measurement the peak at 28.2$^{\circ}$from (111) plane is dominantly detected in the SPC poly-Si films, The average grain size of poly-Si film is determined by the image of SEM and varies from 4000 $\AA$ to 8000$\AA$. The electrical conductivity of as-deposited amorphous silicon film is about 2.5$\times$10$^{-7}$ ($\Omega$.cm)$^{-1}$ , and 3~4$\times$10$^{-6}$ ($\Omega$.cm)$^{-1}$ of room temperature conductivity is the SPC poly-Si films. The conductivity activation energies are 0.5~0.6 eV or the 500$\AA$-thick poly-Si films.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.450-453
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• 2020

In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

• 한국세라믹학회지
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• 제41권10호
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• pp.728-734
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• 2004

평균입자크기가 서로 다른 WC-Co계 모재위에 고온 열처리법과 화학적 에칭방법을 이용하여 다이아몬드 막을 코팅하고 압흔법을 통해 그 접착력(adhesion strength)을 평가하였다. $1450^{\circ}C$의 고온 열처리 방법에 의해 준비된 WC-Co 시편표면에서는 WC 입자가 성장하였으며, 그 결과 20$\mu$m 이상의 다이아몬드 막이 증착된 경우에도 100kg의 하중에서도 우수한 접착력이 얻어졌다. 그러나, 모재 표면입자의 과도한 입성장으로 시편 인선부에는 변형이 발생하였으며, 증착된 다이아몬드 막은 거친 표면조도를 보였다. 이와 비교하여, 화학적 부식의 경우에는 submicron 크기의 WC 입자를 제외하고, 2$\mu$m 이상의 WC 입자를 가지는 모재를 이용하여 10$\mu$m의 다이아몬드 코팅막을 증착시킨 경우에는, 60kg의 하중에서도 양호한 접착력이 유지되었다 특히, WC 입자가 클수록 접착력의 신뢰성이 대폭 향상되었다. 이는 수 $\mu$m 이내의 비교적 얇은 두께의 다이아몬드 막을 증착하는 경우 화학적 에칭방법이 시편 형상의 변형을 방지하고, 양호한 표면조도를 얻을 수 있어 고온 열처리 방식에 비해 효과적임을 의미한다.