• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.969-975
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• 2002

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.35 no.4
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• pp.343-352
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• 1999

Because stow net being used in now is doing throwing net and hauling net through a ship's side, the work is very complicated and the fishing boat needs many seamen and it could cause a loss of lives and ship in stormy weather. We are now using small mesh size 36~500mm and it even catches young fish, so we call it the fishing gear of resource reduction type.Therefore we must make manpower reduction in automatic operation, safe operation of throwing net and hauling net in the stern and the stern-typed stow net of resource management using large mesh. And we performed three-typed model tests to examine the fishing gear. The obtained results are as follows;1. The fishing gear being used in the ship's side type stow net has inappropriate standard and arrangement of the net, resistance increase of the fishing gear and frequent breakdown of the net.2. To supplement the fault of A-typed stow net, we schemed fishing gear developed as both B-type(12-seamed net) and C-types(8-seamed net) of the stern-typed stow net. 3. In model tests, C-typed model net(mesh size 40~1,600mm) was proved good fishing gear because the resistance in accordance with the flowing speed was comparatively small and it's mouth area was broad. 4. A-typed stow net had the spreading device attached to side panel of the net, but the stern-typed stow net had the spreading device consisted of 4 lines far behind about 6m from side panel of the net mouth. In the flowing speed 2knot, the spreading condition of fishing gear was proved batter than the former.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.92-95
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• 1997

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductivity, diamond-like carbon (DLC) film is a suitable material for the passivation layers. For this purpose, using the PECVD, DLC films were synthesized at room temperature. The adhesion and the hardness of the DLC films deposited on Si an SiO2 substrate were measured. The resistivity of 5.3$\times$$10^8$$\Omega$.cm was measured by automatic spreading resistance probe analysis method. The thermal conductivities of different DLC films were measured and compared with that of phospho silicate glass (PSG) film which is commonly used as passivation layers. The thermal conductivity of DLC film was improved by increasing hydrogen flow rate up to 90 sccm and was better than that of PSG film. The patterning techniques of the DLC film developed using the RIE and the lift-off method to form 5$\mu\textrm{m}$ line. Finally, the thermal characteristics of the power transistor with the DLC film as passiviation layer was analyzed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.97-104
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• 1996

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.