• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1473-1475
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• 2002

This study presents the dielectric properties of $Ta_2O_5$ MIM capacitor structure processed by thermal oxidation. The AES(auger electron emission) depth profile showed thermal oxidation effect gives rise to the $O_2$ deficiened into the new layer. The leakage current density respectively, at $1{\sim}3{\times}10^{-3}$(kV/cm) were $3{\times}10^{-4}-10^{-8}(A/cm^2)$. Leakage current density behavior is stable irrespective of applied electric field, the frequency va capacitance characteristic enhanced stability. The capacitance vs voltage measurement that, $V_{fb}$(flat-band voltage) was increase dependance on the thin films thickness, it is changed negative to positive.

• 전자공학회논문지A
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• 제28A권5호
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• pp.380-386
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• 1991

Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and $\alpha$-step, it could be known that GaAs on Si with Ge buffer layer has better crystalline quality than GaAs on Si without Ge buffer layer. The stoichiometry of GaAs layer on Si was confirmed by the depth profile of Auger electron spectroscope (AES). Also the native oxide(SiO$_2$) layer on Si substrate was plama-etched and the removal of the oxide layer was confirmed by AES. Photoluminescence peak wavelength of GaAs/Ge/Si with Ge buffer of 1\ulcorner thickness and GaAs growth rate of 160$\AA$/min was 8700$\AA$and FWHM was 12$\AA$.

• 한국산학기술학회논문지
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• 제8권2호
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• pp.195-200
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• 2007

최소선폭 $0.1{\mu}m$ 이하의 살리사이드 공정을 상정하여 $10nm-Ni_{0.5}Co_{0.5}/70\;nm-Poly-Si/200\;nm-SiO_2$ 구조로부터 쾌속 열처리를 이용해서 실리사이드 온도를 $600{\sim}1100^{\circ}C$까지 변화시키면서 복합실리사이드를 제조하고 이들의 면저항의 변화와 미세구조의 변화를 면저항 측정기와 TEM 수직단면, 오제이 두께 분석으로 확인하였다. 기존의 동일한 공정으로 제조된 니켈실리사이드에 비해 제안된 니켈 코발트 복합실리사이드는 $900^{\circ}C$까지 저저항을 유지시킬 수 있는 장점이 있었고 20nm 두께의 균일한 실리사이드 층을 폴리실리콘 상부에 형성시킬 수 있었다. 고온 처리시에는 복합실리사이드와 실리콘의 전기적으로 상분리되는 혼합현상으로 고저항 특성이 나타나는 문제를 확인하였다. 제안된 NiCo 합금 박막을 70nm 높이의 폴리실리콘 게이트를 가진 디바이스에 $900^{\circ}C$이하의 실리사이드화 온도에서 효과적으로 산리사이드 공정의 적용이 기대되었다.

• 대한전자공학회논문지
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• 제22권6호
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• pp.34-40
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• 1985

분자선 에퍼택시 (MBE)방법을 이용하여 (100) GaAs웨이퍼 위에 GaAs에퍼충을 성장시켜 성장된 충에 대한 여러가지 특성을 조사 ·분석하였다. 분자선 에피택시 방법을 이용하여 CaAs에퍼층을 만들 때에는 기판온도와 As와 Ca의 분자선 밀도비 (As/Ga)가 가장 큰 영향을 미친다. 본 실험에서는 좋은 표면상태를 얻기 위해 480℃∼650℃로 유지시키고 As cell의 온도를 230℃, Ga eel함 온도를 917℃로 고정시켜 As와 Ga의 분자선 밀도비를 5∼10 이상으로 유지시켰다. 제작된 GaAs에피층의 표면상태를 SIMS (Seconde,y ion Mass ipectoscopy), AES(Auger Electron Spectroscopy) , SEM (Scanning Elect.on Mic,oscopy) , RHEED (Reflection High Energy Electron Diffraction) 등으로 조사한 결과 기판온도가 540℃일 때 가장 좋은 표면상태를 얻을 수 있었다. 또한 RH-EED관찰 결과 As 안정화된 표면을 관측할 수 있었으며 SIMS로 depth-Profile을 해 본 곁과, Ca 보다 As가 불안정함을 알았다. 또한 반선 회절 검사결과에서 기판온도가 520℃일때와 540℃일때 (400), (200)면에 단결정이 형성되었음을 알 수 있었다.

• 한국토양비료학회지
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• 제48권2호
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• pp.105-118
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• 2015

This study was carried out to investigate the effects of profile disturbance with different artificial accumulation history on physico-chemical properties of soil under plastic film house. The investigations included soil profile description using soil column cylinder auger F10cm x h110cm, in situ and laboratory measurements of soil properties at five sites each at the cucumber (Site Ic ~ Vc) and grape (Site Ig ~ Vg) plastic film houses with artificial soil accumulation. The sites except sites Ic, IVc, IVg and Vg, belong to ex-paddy area. The types of accumulates around root zone included sandy loam soil for 3 sites, loam soil for 1 site, saprolite for 2 sites, and multi-layer with different accumulates for 3 sites. Especially, Site IIg has mixed plow zone (Ap horizon) with original soil and saprolite, whereas disturbed soil layers of the other sites are composed of only external accumulates. The soil depth disturbed by artificial accumulation ranged from 20 cm, for Site IIg, to whole measured depth of 110 cm, for Site IVc, Vc, and Site IVg. Elapsed time from artificially accumulation to investigation time ranged from 3 months, Site IIc, to more than 20 years, Site Vg, paddy-soil covering over well-drained upland soil during land leveling in 1980s. Disturbed top layer in all sites except Site Vg had no structure, indicating low structural stability. In situ infiltration rate had no correlation with texture or organic matter content, but highest value with highest variability in Site IIIc, the shortest elapsed time since sandy loam soil accumulation. Relatively low infiltration rate was observed in sites accumulated by saprolite with coarse texture, presumably because its low structural stability in the way of weathering process could result in relatively high compaction in agro-machine work or irrigation. In all cucumber sites, there were water-transport limited zone with very low permeable or impermeability within 50 cm under soil surface, but Site IIg, IIIg, and Vg, with relatively weak disturbance or structured soil, were the reverse. We observed the big change in texture and re-increase of organic matter content, available phosphate, and exchangeable cations between disturbed layer and original soil layer. This study, therefore, suggest that the accumulation of coarse material such as saprolite for cultivating cash crop under plastic film house might not improve soil drainage and structural stability, inversely showing weaker disturbance of original soil profile with higher drainage.

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.747-751
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• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1010-1013
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• 2001

Zinc oxide(ZnO) films were prepared by ultrasonic spray pyrolysis on indium (In) films deposited by evaporation and subsequently submitted to rapid thermal annealing (RTA). The RTA was processed in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were characterized before and after the RTA by X-ray diffraction (XRD) and scanning electron microscopy(SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy(AES) was carried out to figure out the distribution of indium atoms in the ZnO films. The resistivity of the ZnO on In(ZnO/In) films decreased to 2${\times}$10$\^$-3/ $\Omega$cm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of the ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800$^{\circ}C$, which disappeared by the RTA at 1000$^{\circ}C$. The effects of temperature, time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.828-834
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• 2001

Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• Tribology and Lubricants
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• 제23권1호
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• pp.14-18
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• 2007

SCM415 alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of $1{\times}10^{17}\;to\;6{\times}10^{17}N^{+}cm^{-2}$. Auger electron spectrometry (AES) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a block-on-ring wear tester. Scanning electron microscopy (SEM) was used to observe the micro-morphology of the worn surface. The results revealed that after being implanted with nitrogen ions, the frictional coefficient of the surface layer decreased, and the wear resistance increased with the nitrogen dose. The tribological mechanism was mainly adhesive, and the adhesive wear tended to become weaker oxidative wear with the increase in the nitrogen dose. The effects were mainly attributed to the formation of a hard nitride precipitate and a supersaturated solid solution of nitrogen in the surface layer.