• Korean Journal of Materials Research
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• v.4 no.6
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• pp.638-643
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• 1994

The Si(ll1) surface structures induced by deposition of Au atoms were investigated by RHEED system. When Au atoms were deposited on the Si(ll1) $7\times7$ surfade, the dependence of structures and phases on the substrate temperatures and coverages was drastic. For O.1ML to 0.4ML of coverage the $7\times7$ structure changes to $7\times7$ + $5\times2$ structure as temperature increases to $350^{\circ}C$-$750^{\circ}C$. Between 0.4M1 to 1.OML the phase changed to $5 \times 2,\alpha- \sqrt{3} \times \sqrt{3},\beta- \sqrt{3} \times \sqrt{3}$ structure according to the substrate temperature and coverages. When the coverages exceeds O.SML, the 6 x 6 structure appears at the substrate temperature range between $270^{\circ}C$-$370^{\circ}C$ and compeletely transforms to 6 x6 at 1,OML. The isothermal desorption of Au on Si(ll1) surface investigated by using AES in the $\alpha- \sqrt{3} \times \sqrt{3},5 \times 2$ structures shows that the desorption energys of $\alpha- \sqrt{3} \times \sqrt{3}$ and 5 x 2 were 79Kcal/mol and 82 Kcal/mol respectively.

• Economic and Environmental Geology
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• v.33 no.2
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• pp.91-100
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• 2000

It has been more than ten years since Dukun mine was abandoned. Tailings of waste deposits and slime dumps in the abandoned Dukum mine have been left to be deserted for fifty years. The results of fifty years of neglecting are nothing short of major environmental problems. Slime dumps have been exposed to air and water in the mine over ten years and then soil profile has been formed well. Soil in the upper layer (A horizon) is the light gray color due to the leaching of cations. Soil in the lower layer (A2 horizon, 0.2∼0.3m)is tinted with reddish brown and yellowish brown color due to the development of iron oxides and iron hydroxides. Soil in the lower part of B horizon of (1.0∼3.0m) with the growth of copper and zinc oxides exposes to the bluish green, light blue, and dark gray. Ranging from 3m to 8m in depth, 85 samples were taken from 22 sampling sites with 50m intervals located on the slime dump area with hand auger and trench (open cut). As tailings was distributed, heavy metal elements extracted by the process of surface water and ground water move and disperse in to the hydrosphere. Waste dumps were distributed in and around the mine and water draining from those dumps be a potential source of contamination. Soils, thus, can be dispersed into downslope and downstream through wind and water by clastic movement. These materials may be deposited in another horizon if the water is withdrawn, or if the materials are precipitated as a result of differences in pH, or other conditions in deeper horizons. These were primarily associated with acid mine drainage. The characteristics and rate of release of acid mine drainage are influenced by various chemical and biological reactions at the source of acid generations. Prolonged extration of heavy metal elements has a detrimental effect on the agricultural land and residental area. Twenty soil samples were collected from the agricultural land in the area (0∼30 cm). Seventeen samples were also taken from the sediment in the stream running alongside the dumps. The dispersion patterns of heavy metal elements are as follows: The content of As ranged 2∼6 ppm in a horizon, 20∼125 ppm in B horizon with large amount of clay mineral is concentrated and the content of Cd ranged 1∼2 ppm in A horizon, 4∼22 ppm in B horizon. Like Cd, the content of As, Cu, Zn, Pb in B horizon is higher than that in A horizon (approximately 5∼100 times). When soil formation proceeds in stages, it is necessary to investicate the B horizon with the concentration of heavy metal and preventive measures will have to established.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.169-177
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• 1995

The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.607-617
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• 1998

Au was dosed on $TiO_2(001)$ film grown epitaxially on Mo(100) surface in about 90 ${\AA}$ thickness. The growth mode of Au, thermal behavior and stability of the Au clusters, and the binding energy shift of Au 4f with the change in the amount of Au loading were studied by Auger Electron Spectroscopy (AES), Temperature Programmed Desorption (TPD) spectroscopy, Ion Scattering Spectroscopy (ISS), and X-ray Photoelectron Spectroscopy (XPS). Au grows three dimensionally on $TiO_2(001)$ film and the average size of Au clusters prepared at low temperature is smaller than those at higher temperature and the size increases with temperature irreversibly. Au clusters on $TiO_2(001)/Mo(100)$ start evaporation at 1000 K. TPD spectra of Au show very asymmetric peaks with the same leading edges irrespective of the amount of Au loading. The temperature at the peak maximum increases with the amount of Au. The desorption energy of Au obtained from the leading edge analysis of the TPD spectra is about 50 kcal/mol. The initial sticking coefficient of Au on $TiO_2(001)$ is constant in the temperature range of 200-600 K. The binding energy of Au 4f for the Au loaded on the film less than 2.0 MLE shifts to higher energy compared with the bulk Au. The shift is +0.3 eV at 0.1 MLE Au amount.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.3
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• pp.307-326
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• 2004

Statement of problem. The long-term success of implants is the development of a stable direct connection between bone and implant surface, which must be structural and functional. To improve a direct implant fixation to the bone, various strategies have been developed focusing on the surface of materials. Among them, altering the surface properties can modify cellular responses such as cell adhesion, cell motility and bone deposition. Purpose. This study was to evaluate the cellular behaviors on the surface-modified titanium by morphological observation, cellular proliferation and differentiation. Material and methods. Specimens were divided into five groups, depending on their surface treatment: electropolishing(EP) anoclizing(AN), machining(MA), blasting with hydroxyapatite particle(RBM) and electrical discharge machining(EDM). Physicochemical properties and microstructures of the specimens were examined and the responses of osteoblast-like cells were investigated. The microtopography of specimens was observed by scanning electron microscopy(SEM). Surface roughness was measured by a three-dimensional roughness measuring system. The microstructure was analyzed by X-ray diffractometer(XRD) and scanning auger electron microscopy(AES). To evaluate cellular responses to modified titanium surfaces, osteoblasts isolated from neonatal rat were cultured. The cellular morphology and total protein amounts of osteoblast-like cell were taken as the marker for cellular proliferation, while the expression of alkaline phosphatase was used as the early differentiation marker for osteoblast. In addition, the type I collagen production was determined to be a reliable indicator of bone matrix synthesis. Results. 1. Each prepared specimen showed specific microtopography at SEM examination. The RBM group had a rough and irregular pattern with reticulated appearance. The EDM-treated surface had evident cracks and was heterogeneous consisting of broad sheet or plate with smooth edges and clusters of small grains, deep pores or craters. 2. Surface roughness values were, from the lowest to the highest, electropolished group, anodized group, machined group, RBM group and EDM group. 3. All groups showed amorphous structures. Especially anodized group was found to have increased surface oxide thickness and EDM group had titaniumcarbide(TiC) structure. 4. Cells on electropolished, anodized and machined surfaces developed flattened cell shape and cells on RBM appeared spherical and EDM showed both. After 14 days, the cells cultured from all groups were formed to be confluent and exhibited multilayer proliferation, often overlapped or stratified. 5. Total protein amounts were formed to be quite similar among all the group at 48 hours. At 14 days, the electropolished group and the anodized group induced more total protein amount than the RBM group(P<.05). 6. There was no significant difference among five groups for alkaline phosphatase(ALP) activity at 48 hours. The AN group showed significantly higher ALP activity than any other groups at 14 days(P<.05). 7. All the groups showed similar collagen synthesis except the EDM group. The amount of collagen on the electropolished and anodized surfaces were higher than that on the EDM surface(P<.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Korean Journal of Soil Science and Fertilizer
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• v.48 no.2
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• pp.105-118
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• 2015

This study was carried out to investigate the effects of profile disturbance with different artificial accumulation history on physico-chemical properties of soil under plastic film house. The investigations included soil profile description using soil column cylinder auger F10cm x h110cm, in situ and laboratory measurements of soil properties at five sites each at the cucumber (Site Ic ~ Vc) and grape (Site Ig ~ Vg) plastic film houses with artificial soil accumulation. The sites except sites Ic, IVc, IVg and Vg, belong to ex-paddy area. The types of accumulates around root zone included sandy loam soil for 3 sites, loam soil for 1 site, saprolite for 2 sites, and multi-layer with different accumulates for 3 sites. Especially, Site IIg has mixed plow zone (Ap horizon) with original soil and saprolite, whereas disturbed soil layers of the other sites are composed of only external accumulates. The soil depth disturbed by artificial accumulation ranged from 20 cm, for Site IIg, to whole measured depth of 110 cm, for Site IVc, Vc, and Site IVg. Elapsed time from artificially accumulation to investigation time ranged from 3 months, Site IIc, to more than 20 years, Site Vg, paddy-soil covering over well-drained upland soil during land leveling in 1980s. Disturbed top layer in all sites except Site Vg had no structure, indicating low structural stability. In situ infiltration rate had no correlation with texture or organic matter content, but highest value with highest variability in Site IIIc, the shortest elapsed time since sandy loam soil accumulation. Relatively low infiltration rate was observed in sites accumulated by saprolite with coarse texture, presumably because its low structural stability in the way of weathering process could result in relatively high compaction in agro-machine work or irrigation. In all cucumber sites, there were water-transport limited zone with very low permeable or impermeability within 50 cm under soil surface, but Site IIg, IIIg, and Vg, with relatively weak disturbance or structured soil, were the reverse. We observed the big change in texture and re-increase of organic matter content, available phosphate, and exchangeable cations between disturbed layer and original soil layer. This study, therefore, suggest that the accumulation of coarse material such as saprolite for cultivating cash crop under plastic film house might not improve soil drainage and structural stability, inversely showing weaker disturbance of original soil profile with higher drainage.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.53-53
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• 1999

전계방출을 이용한 평판 표시장치는 CRT가 가진 장점을 모두 갖는 동시에 얇고 가벼우며 낮은 전력소모로 완벽한 색을 구현할 수 있는 차세대 표시장치로서 이에 대한 여국가 활발히 이루어지고 있다. 여기에 사용되는 음극물질로서 실리콘이나 몰리 등을 팁모양으로 제작하여 사용해 왔다. 하지만 잔류가스에 의한 역스퍼터링이나 화학적 반응에 의해서 전계방출 성능이 점차 저하되는 등의 해결해야할 많은 문제가 있다. 이러한 문제들을 해결하기 위하여 탄소계 재료로서 다이아몬드, 다이아몬드상 카본 등을 이용하려는 노력이 진행되어 왔다. 이중 유리화 비정형 탄소는 다량의 결함을 가지고 있는 유리질의 고상 탄소 재로로서, 전기전도도가 우수하면서 outgassing이 적고 기계적 강도가 뛰어나며 고온에서도 화학적으로 안정하여 전계방출 소자의 음극재료로서 알맞은 것으로 생각된다. 유리화 비정형 탄소가루를 전기영동법으로 기판에 코팅하여 전계방출 소자를 제작하였다. 전기영동 용액으로 이소프로필알코올에 질산마그네슘과 소량의 증류수, 유리화 비정형 탄소분말을 섞어주었고 기판으로는 몰리(Mo)가 증착된 유리를 사용하였다. 균일한 증착을 위해서 증착후 역전압을 걸어 주는 방법과 증착 후 플라즈마 처리를 하는 등의 여러 가지 방법을 사용했다. 전계방출 전류는 1$\times$10-7Torr이사에서 측정하였다. 1회 제작된 용액으로 반복해서 증착한 횟수에 따라 표면의 거치기, 입자의 분포, 전계방출 측정 결과 등의 차이가 관찰되었다. 발광이미지는 전압에 따라 변화하였고, 균일한 발광을 관찰하기 위해서 오랜 시간동안 aging 과정을 거쳐야 했다. 그리고 구 모양의 양극을 사용해서 위치를 변화시키며 시동 전기장을 관찰하여 위치에 따른 전계방출의 차이를 조사하여 발광의 균일성을 알 수 있었다.on microscopy로 분석하였으며 구조 분석은 X-선 회절분석, X-ray photoelectron spectroscopy 그리고Auger electron spectroscope로 하였다. 증착된 산화바나듐 박막의 전기화학적 특성을 분석하기 위하여 리튬 메탈을 anode로 하고 EC:DMC=1:1, 1M LiPF6 액체 전해질을 사용한 Half-Cell를 구성하여 200회 이상의 정전류 충 방전 시험을 행하였다. Half-Cell test 결과 박막의 결정성과 표면상태에 따라 매우 다른 전지 특성을 나타내었다.도상승율을 갖는 경우가 다른 베이킹 시나리오 모델에 비해 효과적이라 생각되며 초대 필요 공급열량은 200kW 정도로 산출되었다. 실질적인 수치를 얻기 위해 보다 고차원 모델로의 해석이 필요하리라 생각된다. 끝으로 장기적인 관점에서 KSTAR 장치의 베이킹 계획도 살펴본다.습파라미터와 더불어, 본 연구에서 새롭게 제시된 주기분할층의 파라미터들이 모형의 학습성과를 높이기 위해 함께 고려된다. 한편, 이러한 학습과정에서 추가적으로 고려해야 할 파라미터 갯수가 증가함에 따라서, 본 모델의 학습성과가 local minimum에 빠지는 문제점이 발생될 수 있다. 즉, 웨이블릿분석과 인공신경망모형을 모두 전역적으로 최적화시켜야 하는 문제가 발생한다. 본 연구에서는 이 문제를 해결하기 위해서, 최근 local minimum의 가능성을 최소화하여 전역적인 학습성과를 높여 주는 인공지능기법으로서 유전자알고리즘기법을 본 연구이 통합모델에 반영하였다. 이에 대한 실증사례 분석결과는 일일 환율예측문제를 적용하였을 경우, 기존의 방법론보다 더 나운 예측성과를 타나내었다.pective" to workflow architectural discussions. The vocabulary suggested