• 제목/요약/키워드: Au thin film

검색결과 302건 처리시간 0.031초

CVD로 성장된 다결정 3C-SiC 박막의 전기적 특성

  • 안정학;정귀상
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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    • pp.179-182
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    • 2007
  • Polycrystaline (poly) 3C-SiC thin film on n-type and p-type Si were deposited by APCVD using HMDS, $H_2$, and Ar gas at $1180^{\circ}C$ for 3 hour. And then the schottky diode with Au/poly 3C-Sic/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) value were measured as 0.84 V, over 140 V, 61nm, and $2.7{\times}10^{19}\;cm^3$, respectively. The p-n junction diode fabricated by poly 3C-SiC was obtained like characteristics of single 3C-SiC p-n junction diode. Therefore, its poly 3C-SiC thin films are suitable MEMS applications in conjuction with Si fabrication technology.

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LTCC 기판에 성장시킨 PZT 박막의 열처리 조건에 따른 특성

  • 이경천;황현석;이태용;허원영;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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    • pp.14-14
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    • 2010
  • Recently, low temperature co-fired ceramic (LTCC) technology has gained a remarkable application potential in sensors, actuators and micro systems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of annealing treatment on the electrical properties of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. PZT thin films were deposited on Au / LTCC substrates by RF magnetron sputtering method. Then, the change of the crystallization of the films were investigated under various annealing temperatures and times. The results showed that the crystallization of the films were enhanced as increasing annealing temperatures. The film, annealed at $700^{\circ}C$, 3min, was well crystallized in the perovskite structure.

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LB법으로 제작한 유기박막의 전자이동특성에 관한 연구 (A Study on the Electronic Properties of Organic Thin Films that Manufacture by LB Method)

  • 송진원;김영근;이경섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 C
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    • pp.1539-1541
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    • 2002
  • When did Metal (Au, Al) electrode differently, it is spread already that it is by energy level of electrode difference of electrical conductivity. This paper, experiment manufactures device of Metal/Organic Films/Metal structure using PBDG and I-V properties by electrode analyzed comparison. Also, measure energy level by electrode by propertiesy electrochemistry and studied about electron transfer of organic thin film in LUMO level relation with HOMO level.

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열처리 조건에 따른 3C-SiC 박막을 이용한 그래핀 합성 (Synthesis of Graphene Using 3C-SiC Thin Films with Thermal Annealing Conditions)

  • 김강산;정귀상
    • 센서학회지
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    • 제21권5호
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    • pp.385-388
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    • 2012
  • This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 ${\Omega}$.

극한 환경 마이크로 화학센서용 다결정 3C-SiC 다이오드 제작과 그 특성 (Fabrication of polycrystalline 3C-SiC diode for harsh environment micro chemical sensors and their characteristics)

  • 심재철;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.195-196
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    • 2009
  • This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

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메탈 이중층 전극을 이용한 유기 박막 트랜지스터의 성능향상 (High-Performance Organic Thin-Film Transistors with Metal Bilayer Electrodes)

  • 형건우;양진우;이호원;구자룡;황진하;김영관
    • 한국응용과학기술학회지
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    • 제27권1호
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    • pp.50-55
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    • 2010
  • 본 논문은 메탈 이중층 전극을 이용한 유기 박막 트랜지스터를 제작하여 Au나 Ag 금속만으로 제작한 일반적인 유기 박막 트랜지스터와의 전기적 특성을 비교하였다. 전기적 특성에서 게이트 절연층은 높은 K 값을 갖는 $Al_2O_3$를 사용하였고, 유기 반도체층은 펜타센을 사용하였다. 본 실험에서 제작한 유기 박막 트랜지스터는 $1.6 \;{\times}\;10^{-1}\;cm^2$의 포화영역 이동도를 얻을 수 있었으며, 또한 드레인 전압을 -5V로 하고, 게이트 전압을 3 V에서 -10 V 까지 인가하였을 때 $3{\times}10^5$의 전멸 비를 얻을 수 있었다.

니트로기를 가진 자기조립된 유기 초박막의 부성미분저항 특성에 관한 연구 (A Study on the Negative Differential Resistance Properties of Self-Assembly Organic Thin Film with Nitro Group)

  • 김승언;손정호;김병상;신훈규;권영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.811-813
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    • 2003
  • We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

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In Plane 방식의 P-N Junction 박막열전소자 제작 (Design of In Plane P-N Junction Thin-Film Thermoelectric Device)

  • 권성도;김은진;이윤주;윤석진;주병권;김진상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.178-178
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    • 2008
  • 초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.

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Effects of Hole Transport Layer Using Au-ionic Doping SWNT on Efficiency of Organic Solar Cells

  • Min, Hyung-Seob;Jeong, Myung-Sun;Choi, Won-Kook;Kim, Sang-Sig;Lee, Jeon-Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.434-434
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    • 2012
  • Despite recent efforts for fabricating flexible transparent conducting films (TCFs) with low resistance and high transmittance, several obstacles to meet the requirement of flexible displays still remain. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. Recently, it has been demonstrated that acid treatment is an efficient method for surfactant removal. However, the treatment has been reported to destroy most SWNT. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance by Au-ionic doping treatment on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effects of hole transport interface layer using Au-ionic doping SWNT on the performance of organic solar cells were investigated.

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Design and Simulation of Tunable Bandpass Filters Using Ferroelectric Films for Wireless Communication Systems

  • Mai Linh;Dongkyu Chai;Tuan, Le-Minh;Giwan Yoon
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2002년도 춘계종합학술대회
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    • pp.523-526
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    • 2002
  • This paper presents the simulation of Au / $Ba_{x}$S $r_{1-x}$ Ti $O_3$(BSTO) / Magnesium oxide (MgO) multi-layered and electrically tunable band-pass filters (BPFs) by using high frequency structure simulator (HFSS). This model is a two-pole microstrip edge coupled filter. The filter was designed fur a center frequency about 5.8 GHz. The tunabillity of the filter is achieved using the nonlinear dc electric-field dependence on the relative dielectric constant of BSTO frroelectric thin film. This work seems very promising for future wireless communication systems....

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