• Korean Journal of Materials Research
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• v.8 no.9
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• pp.837-842
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• 1998

As the size of the integrated circuit is scaled down the importance of Si cleaning has been emphasized. One of the major concerns is abut the removal of metallic impurities such as Cu and Fe on Si surface. In this study, we intentionally contaminated Cu and Fe on the Si wafers and cleaned the wafer by cleaning splits of the chemical mixture of $\textrm{H}_2\textrm{O}_2$ and HF and the combination of HF treatment with UV/$\textrm{O}_3$ treatment. The contamination level was monitored by TXRF. Surface microroughness of the Si wafers was measured by AFM. The Si wafer surface was examined by SEM. AES analysis was carried out to analyze the chemical composition of Cu impurities. The amount of Cu impurities after intentional contamination was abut the level of $\textrm{10}^{14}$ atoms/$\textrm{cm}^2$. The amount of Cu was decreased down to the level of $\textrm{10}^{10}$ atoms/$\textrm{cm}^2$ by cleaning splits. The repeated treatment exhibited better Cu removal efficiency. The surface roughness caused by contamination and removal of Cu was improved by repeated treatment of the cleaning splits. Cu were adsorbed on Si surface not in a thin film type but in a particle type and its diameter was abut 100-400${\AA}$ and its height was 30-100${\AA}$. Cu was contaminated on Si surface by chemical adsorption. In the case of Fe the contamination level was $\textrm{10}^{13}$ atoms/$\textrm{cm}^2$ and showed similar results of above Cu cleaning. Fe was contaminated on Si surface by physical adsorption and as a particle type.

• Korean Journal of Crystallography
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• v.17 no.2
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• pp.51-54
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• 2006

BaO layers were formed on the Si(100) surface by thermal evaporation of barium metal with simultaneous oxidation. The atomic structure of BaO layers at the initial stage of the deposition was investigated by the scattering intensity variation of $He^+$ions on time-of-flight (TOF) impact-collision ion scattering (ICISS). The results show that several number of BaO layers are formed on the Si(100) surface with the lattice parameter of bulk phase, and the occupation of oxygen atoms of the BaO layers is on-top site of silicon atoms.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.134-135
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• 2011

The fundamental properties of $Fe_3P$ intermetallic compound was investigated in terms of the FLAPW method within GGA. The FM state of $Fe_3P$ was found to be energetically more stable compared to the NM one. It is consistent with the experiment. In addition, the calculated magnetic moments of Fe atoms were calculated to be 2.367, 1.665, and 2.104 ${\mu}B$ for FeI, FeII, and FeIII atoms, respectively.

• Korean Journal of Crystallography
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• v.12 no.1
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• pp.1-4
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• 2001

Single crystals of strontium barium metaborate, Sr/sub 1.36/Ba/sub 1.64/(B₃O/sub 6/)₂, were grown for the first time by the high-temperature-solution-growth technique, and a detailed structure analysis was carried out with the space group R3c. The metaborate (B₃O/sub 6/)/sup 3-/ anion planar groups in the title compound form infinite layers parallel to (001) plane, and Sr and Ba atoms are alternatively placed between the layers and are octahedrally coordinated by six O(2) atoms in the neighbouring anion rings.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.61-64
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• 2008

We investigated experimentally the influence of the generation efficiency for excited Xe atoms on ultra-fine horizontal cell pitch AC PDPs. In the case of a 0.1 mm cell pitch, the sustain voltage increased; however, the generation efficiency was equal to or higher than for the conventional 0.22 mm cell pitch.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.365-369
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• 2014

We present accurate analytical solutions of the lineshapes of birefringence (rotation) and dichroism (absorption) spectroscopy for a circular anisotropic medium composed of atoms of the transition $J_g=0{\rightarrow}J_e=1$. The susceptibility of a weak probe beam was analytically calculated and was averaged over a Maxwell-Boltzmann velocity distribution. The lineshapes of the two spectroscopies were then presented in analytical forms at arbitrary values of the linewidths of the inhomogeneous (Doppler) broadening and the homogeneous (natural) broadening of the atoms.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.29-31
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• 1993

NH3-pplasma treatment has been used for ppassivation of native-oxide-contaminated GaAs surface. Ex-situ band-gapp pphotoluminescence(ppL) measurement shows enhanced intensity for the treated surfaces. Auger electron sppectroscoppy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to sppeculate that the graded GaN thin layer was formed on the surface. Based on these results, new metal-insulator-GaAs structure is ppropposed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.89-89
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• 2012

Arrangement of individual atoms and molecules with atomic precision and understanding the resulting properties at the molecular level are ultimate goals of chemistry, biology, and materials science. For the past three decades, scanning probe microscopy has made strides towards these goals through the direct observation of individual atoms and molecules, enabling the discovery of new and unexpected phenomena. This talk will discuss the origin of forces governing motion of small organic molecules and their extended self-assembly into two-dimensional surface structures by direct observation of individual molecules using scanning tunneling microscopy (STM).

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.253-256
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• 2014

Functionalization of zigzag graphene nanoribbon (ZGNR) segment containing 120 C atoms with pyridine (3NV-ZGNR) defects was investigated on the basis of density-functional theory (DFT) calculations, results show that edge-modified ZGNRs by Sc can adsorb multiple hydrogen molecules in a quasi-molecular fashion, thereby can be a potential candidate for hydrogen storage. The stability of Sc functionalization is dictated by a strong binding energy, suggesting a reduction of clustering of metal atoms over the metal-decorated ZGNR.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.713-715
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• 2009

Preferred orientation of MgO protection layer is controlled via adjusting diffusion of adatom between (111) plane with highest neighbor atoms and (200) plane with lowest neighbor atoms. The diffusion of adatom could be modulated by the factors such as substrate temperature, deposition rate, and extra energy applied on adatom like ion beam energy.