• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Korean Journal of Materials Research
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• v.22 no.2
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• pp.66-70
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• 2012

Ti-Ni alloys are widely used in numerous biomedical applications (e.g., orthodontics, cardiovascular science, orthopaedics) due to their distinctive thermomechanical and mechanical properties, such as the shape memory effect, superelasticity and low elastic modulus. In order to increase the biocompatibility of Ti-Ni alloys, many surface modification techniques, such as the sol-gel technique, plasma immersion ion implantation (PIII), laser surface melting, plasma spraying, and chemical vapor deposition, have been employed. In this study, a Ti-49.5Ni (at%) alloy was electrochemically etched in 1M $H_2SO_4$+ X (1.5, 2.0, 2.5) wt% HF electrolytes to modify the surface morphology. The morphology, element distribution, crystal structure, roughness and energy of the surface were investigated by scanning electron microscopy (SEM), energy-dispersive Xray spectrometry (EDS), X-ray diffractometry (XRD), atomic force microscopy (AFM) and contact angle analysis. Micro-sized pores were formed on the Ti-49.5Ni (at%) alloy surface by electrochemical etching with 1M $H_2SO_4$+ X (1.5, 2.0, 2.5) wt% HF. The volume fractions of the pores were increased by increasing the concentration of the HF electrolytes. Depending on the HF concentration, different pore sizes, heights, surface roughness levels, and surface energy levels were obtained. To investigate the osteoblast adhesion of the electrochemically etched Ti-49.5Ni (at%) alloy, a MTT test was performed. The degree of osteoblast adhesion was increased at a high concentration of HF-treated surface structures.

• Journal of Mechanical Science and Technology
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• v.15 no.5
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• pp.630-638
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• 2001

The electrical resistivity of sinter dusts generated from the steel industry and coal fly ash from the coal power plant has been investigated using the high voltage conductivity cell based on JIS B 9915 as a function of temperature and water content. Dust characterization such as the chemical composition, size distribution, atomic concentration, and surface structure has been conducted. Major constituents of sinter dusts were Fe$_2$O$_3$(40∼74.5%), CaO (6.4∼8.2%), SiO$_2$(4.1∼6.0%), and unburned carbon (7.0∼14.7%), while the coal fly ash consisted of mainly SiO$_2$(51.4%), Al$_2$O$_3$(24.1%), and Fe$_2$O$_3$(10.5%). Size distributions of the sinter dusts were bi-modal in shape and the mass median diameters (MMD) were in the range of 24.7∼137㎛, whereas the coal fly ash also displayed bi-modal distribution and the MMD of the coal fly ash was 35.71㎛. Factors affecting resistivity of dusts were chemical composition, moisture content, particle size, gas temperature, and surface structure of dust. The resistivity of sinter dusts was so high as 10(sup)15 ohm$.$cm at 150$\^{C}$ that sinter dust would not precipitate well. The resistivity of the coal fly ash was measured 1012 ohm$.$cm at about 150$\^{C}$. Increased water contents of the ambient air lowered the dust resistivity because current conduction was more activated for absorption of water vapor on the surface layer of the dust.

• Journal of Microbiology and Biotechnology
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• v.15 no.5
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• pp.1001-1010
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• 2005

Bacillus megaterium KL39, an antibiotic-producing plant growth promoting rhizobacterium (PGPR), was selected from soil. The antifungal antibiotic, denoted KL39, was purified from culture filtrate by column chromatography using Dion HP-20, Silica gel, Sephadex LH-20, and prep-HPLC. Thin layer chromatography, employing the solvent system of ethanol:ammonia:water=8:1:1, showed the $R_{f}$. value of 0.32. The antibiotic KL39 showed a negative reaction with ninhydrin solution, positive with iodine vapor, and also positive with Ehrlich reagent. It was soluble in methanol, ethanol, butanol, and acetonitrile, but insoluble in chloroform, toluene, hexane, ethyl ether, or acetone. Its UV spectrum had the maximum absorption at 208 nm. Amino acid composition, FAB-mass, $^{1}H-NMR,\;^{13}C-NMR$, and atomic analyses showed that the antibiotic KL39 (MW=1,071) has a structure very similar to iturin E. The antibiotic KL39 has a broad antifungal spectrum against a variety of plant pathogenic fungi including Rhizoctonia solani, Pyricularia oryzae, Monilinia froeticola, Botrytis cinenea, Altenaria kikuchiana, Fusarium oxysporum, and F. solani. An MIC value of $10\;{\mu}g/ml$ was determined for Phytophthora capsici. Macromolecular incorporation studies with P. capsici using radioactive [$^{3}H-adenine$] as the precursor, indicated that the antibiotic KL39 strongly inhibits the DNA biosynthesis of the fungal cell. Microscopic observation of the antifungal action showed abnormal hyphal swelling of P. capsici. The purified antibiotic KL39 was very effective for the biocontrol of in vivo Phytophthora-blight disease of pepper.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.