• Corrosion Science and Technology
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• 제5권3호
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• pp.94-98
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• 2006

The next generation nuclear power reactor will use Pb-Bi as the cooling material. The steel structure materials such as HT-9 used in the reactor suffer from corrosion when they are exposed to high temperature Pb-Bi. Therefore corrosion should be prevented to use Pb-Bi as the coolant material without any safety problem. One method is to control the oxygen content in Pb-Bi. An appropriate amount of oxygen in Pb-Bi can produce a thin oxide layer on steel, and this layer protects the steel from corrosion attack. Since the required oxygen content in Pb-Bi is in the range of $10^{-5}$ to $10^{-7}$ wt%, this small oxygen content can be controlled by flowing a mixture of hydrogen gas and water vapor. The stagnant corrosion test of HT-9 samples was performed by controlling the oxygen content up to 2,000 hours. The corrosion behavior of HT-9 was analyzed at the temperatures of $500^{\circ}C$ and $650^{\circ}C$ with a reduced condition and a oxygen content of $10^{-6}$ wt%.

• 한국표면공학회지
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• 제23권4호
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• 한국안전학회지
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• 제8권2호
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• pp.3-9
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• 1993

For comparison, we used Ca and Mg as reducers to produce TiFe hydrogen stroage alloy from Fe and TiO$_2$by the Reduction-Diffusion process. The results obtained were as follow. \circled1 Ca was found to be effective both for reduction and diffusion processes. Moreover, Ca oxide was easily removed in an NH$_4$Cl solution after the reaction. \circled2 In the case of using Ca as a reducer, the Reduction-Diffusion process is considered to take place in the foiling three steps. First, TiO$_2$is reduced to Ti by Ca over 100$0^{\circ}C$. Second, the atomic Ti drifts in the Ca melt and meets Fe particles. Finally, the atomic Ti diffuses in to the Fe particles. \circled3 In the case of using Mg as a reducer, We found that the reduction reaction of TiO$_2$went well. But the reduced Ti scarcely diffused into Fe particles. This was probably because no Mg melt was formed due to the high vapor pressure of Mg.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.178-178
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• 2010

We have deposited aluminum-doped ZnO thin films on borosilicate glass by atomic layer deposition. Diethylzinc (DEZ) and dimethylaluminum isopropoxide (DMAIP) were used as the metal precursor and the Al-dopant, respectively. Water was used as an oxygen source. DMAIP was successfully used as an aluminum precursor for chemical vapor deposition and ALD. All deposited films showed n-type conduction. The resistivity decreased to a minimum and then increased with increasing the aluminum content. The carrier concentration increased and the carrier mobility decreased with increasing the DMAIP to DEZ pulse ratio. The average optical transmittance was nearly 80 % in the visible part of the spectrum. The absorption edge moved to the shorter wavelength region with increasing the DMAIP to DEZ pulse ratio. Our results indicate that DMAIP is suitable for Al doping of ZnO films.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• 한국광학회지
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• 제4권1호
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• pp.47-56
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• 1993

증기상태의 원자 Au, Ba, Cu, Fe, Mn, Pb, Tl을 모기체로 하는 펄스형 기체방전레이저에 관하여 30ns의 rise time, 펄스반복율 5kHz 방전에 대한 최적동작조건 및 최대효율이 각각 계산되었다. 최적작동온도는 각 원자의 증기압이 대략 1 Torr가 되는 온도이며, 실험에서 보고된 온도범위와 좋은 일치를 보여 주었다. 효율을 최대로 하는 충전전압은 특히 효율이 낮은 Tl을 제외하고는 대락 4kV 정도의 값에서 얻어졌다. 각 레이저의 실질적인 한계효율로서 검토될 수 있는 최대효율은 보고된 실험값 보다 상당히 높은 값으로 계산되었다. 특히, Ba 레이저와 Mn 레이저의 효율은 각각 6.8%, 15%로서 구리증기레이저의 효율 8.5%와 비교할 만한 값이며 실험적으로 보다 높은 효율이 얻어질 수 있음을 예측할 수 있다. 반면에, Tl레이저는 대단히 낮은 효율 0.058%와 예외적인 동작조건을 보여주었다.

• 한국광학회지
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• 제15권1호
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• pp.1-5
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• 2004

분리막을 이용한 산소-18 분리실험에서 분리된 시료의 동위원소 성분비 분석을 위해 다이오드 레이저 흡수분광장치를 구성하였다. 흡수신호의 신호 대 잡음비를 높이기 위해 lock-in증폭기를 사용한 파장변조 분광법을 채택하였다. 레이저의 주파수 변조폭 최적화와 FFT 저역통과 필터링을 통해 다중반사흡수셀에서 발생하는 간섭무늬 잡음을 줄였다. 산소-18에 대한 흡수분광장치의 최대편차는 $\pm$4$\textperthousand$로 측정되었다.

• 방사성폐기물학회지
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• 제3권4호
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• pp.319-328
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• 2005

본 논문에서 사고로 누출된 삼중수소에 의한 농작물 오염평가 모델을 제시한다. 본 논문에서 제시된 모델은 동적격실모델로써 작물의 성장 방정식을 도입한 것이 특징이며, 이로부터 삼중수소 피폭시 작물의 성장단계에 따른 오염 정도를 예측할 수 있다. 시스템은 크게 대기, 토양, 작물격실로 구성되며, 격실의 삼중수소 농도 변화는 비선형 상미분방정식으로 표현되므로 시간에 따른 각 격실의 삼중수소 농도가 계산된다. 모델의 검증을 위해 배추 및 무에 대한 삼중수소 피폭 실험을 수행하였다. 생육단계별 오염 효과를 조사하기 위해 각기 다른 생육단계에 있는 배추와 무를 독립적으로 HTO 증기에 노출시켰으며, 피폭 후 오염된 작물의 tissue free water tritium(TFWT) 및 organically bound tritium(OBT) 농도를 측정하였다. 측정된 작물 부위별 삼중수소 농도 데이터와 모델 예측 값은 대체로 잘 일치하였다.

• Composites Research
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• 제35권3호
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• pp.161-174
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• 2022

SiC 섬유강화 복합체는 경수형 원자로의 안전성을 획기적으로 향상시킬 수 있는 사고저항성 핵연료 피복관 소재이다. 지르코늄 합금 피복관 및 금속기반 사고저항성 핵연료 피복관에 비해, 중대 사고 환경에서도 우수한 구조적 안정성을 가지고 부식 속도가 매우 낮아, 사고 시 원자로의 온도를 낮추고 사고 진행을 늦출 수 있다. 본 논문에서는 현재 개발되고 있는 사고저항성 SiC 복합체 핵연료 피복관의 개념 및 가동/사고환경에서의 다양한 특성, 상용화를 위해 해결해야 할 다양한 이슈에 대해서 소개하고자 한다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.23.2-23.2
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• 2009

Atomic layer deposition (ALD)have been proven to be a very attractive technique for the fabrication of advanced gate dielectrics and DRAM insulators due to excellent conformality and precise control of film thickness and composition, However, one major disadvantages of ALD is its relatively low deposition rate (throughput) because the deposition rate is typically limited by the time required for purging process between the introduction of precursors. In order to improve its throughput, many efforts have been made by commercial companies, for example,the modification reactor and development of precursors. However, any promising solution has not reported to date. We developed a new concept ALD system(Lucida TM S200) with high-throughput. In this process, a continuous flow of ALD precursor and purging gas are simultaneously introduced from different locations in the ALD reactor. A cyclic ALD process is carried out by moving the wafer holder up and down. Therefore, the time required for ALD reaction cycle is determined by speed of the wafer holder and vapor pressure of precursors. We will present the operating principle of our system and results of deposition.