• 제목/요약/키워드: Atomic spin

검색결과 161건 처리시간 0.027초

양성자 조사된 폴리아크릴로니트릴 필름의 광학적 특성 (Optical Properties of Proton-irradiated Polyacrylonitrile Film)

  • 이화수;백가영;정진묵;황인태;정찬희;신준화;최재학
    • 방사선산업학회지
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    • 제10권1호
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    • pp.1-5
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    • 2016
  • In this study, the effect of high-energy proton irradiation on the optical properties of polyacrylonitrile (PAN) films was investigated. PAN thin films spin-coated on a substrate were irradiated 150 keV proton ions at various fluences. The changes in the chemical structure and optical properties were investigated by FT-IR and UV-vis spectroscopy. The results of the FT-IR analysis revealed that the cyclization reaction took place by proton irradiation and the degree of cyclization increased with an increasing fluence. Based on the UV-vis analysis, the optical band gap of PAN decreased from 2.84 to 2.52 eV with an increasing fluence due to the formation of carbon clusters by proton irradiation. In addition, the number of carbon atoms per carbon cluster and the number of carbon atoms per conjugation length were found to be increased with an increasing fluence.

임프린팅을 이용한 BiLaO 패터닝과 액정 디스플레이 소자의 응용 (Patterning of BiLaO film using imprinting process for liquid crystal display)

  • 이주환
    • 전기전자학회논문지
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    • 제25권1호
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    • pp.64-68
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    • 2021
  • 정렬 패턴을 전사공정을 이용하여 BiLaO 박막 위에 패터닝하고 소성온도에 따른 액정 배향 특성에 대하여 연구 하였다. 졸겔 공정을 제작한 BiLaO 은 유리 기판 위에 스핀코팅으로 증착한 후 미리 제작된 정렬패턴을 전사하여 100, 150, 200, 250 ℃ 의 온도에서 소성하였다. POM분석으로부터 200℃ 이하의 소성온도에서 액정배향은 균일하지 않았고, 250 ℃의 소성온도에서 균일한 액정 배향 특성을 확인 할 수 있었고, 결정 회절 법 분석으로 부터도 확인 가능하였다. 전사 공정 시 250 ℃의 온도에서 패턴이 전사되었음을 Atomic force microscopy 을 통하여 확인 할 수 있었다. 250 ℃의 온도에서 전사된 정렬 패턴에 의하여 박막의 이방성을 획득 하였고 이방성 박막 위에서 액정 분자들이 고르게 배향 될 수 있었다. 따라서 BiLaO 산화막의 전사에 의한 액정 배향 공정은 소성온도에 영향을 받는다는 것을 확인 할 수 있었다.

Condensation of Nano-Size Polymer Aggregates by Spin Drying

  • Ishikawa, Atsushi;Kawai, Akira
    • 접착 및 계면
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    • 제6권1호
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    • pp.7-10
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    • 2005
  • Condensation control of nano-particles has become important in order to fabricate minute condensed structures. In this study, we focus our attention on condensation mechanism of polymer aggregates in a resist film. The polymer aggregate is structural component of a resist material which is used in lithography process. The condensation nature of polymer aggregates in the resist film surface is observed by using atomic force microscope (AFM). By using the AFM, the condensation of polymer aggregates can be observed clearly. The condensation of polymer aggregate strongly affects to precise fabrication of resist pattern below 100nm size. The interaction force among polymer aggregates can be analyzed based on Derjaguin approximation. We also discuss about condensation nature of polymer aggregates in the resist film surface with the help of micro sphere model.

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AFM을 이용한 PMMA (Poly Methy1 Methacrylate) 박막의 나노트라이볼로지 연구 (Nanotribology of PMMA thin film using the AFM)

  • 김승현;김용석
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2003년도 추계학술대회논문집
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    • pp.89-92
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    • 2003
  • Nano-scratch tests were performed on PMMA thin films spin-coated on a Si substrate using an atomic force microscopy (AFM) with loads ranging from 10nN to 100nN. At low applied loads, a ridge pattern was formed on the PMMA surface. No wear particles were observed during the pattern-forming mild wear. At high applied loads, severe wear occurred accompanied by wear particles. The film with the highest hardness showed the highest wear resistance. Friction force generated during the Scratching was closely related with surface deformation of the film.

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LB법으로 제작한 백색 EL소자의 발광특성 (Emission Properties of EL Device Fabricated by LB Method)

  • 김주승;이경섭;구할본
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.351-354
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    • 2001
  • We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

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유기절연체를 사용한 ZnO 박막트랜지스터 (ZnO TFT with Organic Dielectric)

  • 최운섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.56-56
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    • 2008
  • ZnO Oxide TFT with organic dielectric was prepared. ZnO thin film as active channel was prepared by plasma enhanced atomic deposition technique. Organic dielectric was spin coated on the gate metal. The structure of prepared TFT is bottom gate type and top contact structure. The characterization of oxide TFT was performed. We obtained the mobility of $0.7cm^2$/Vs, the threshold voltage of -14V, and the on-off ratio of $10^4$. We also obtained good output characterization with solid saturation.

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AFM을 이용한 PMMA (Poly Methyl Methacrylate) 박막의 나노트라이볼로지 연구 (Nanotribology of PMMA Thin Films Using an AFM)

  • 김승현;김용석
    • 소성∙가공
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    • 제13권1호
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    • pp.59-64
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    • 2004
  • Nano-scratch tests were performed on PMMA thin films spin-coated on a Si substrate using an atomic force microscopy (AFM) with loads ranging form 10nN to 100nN. At low loads, a ridge pattern was formed on the PMMA thin film surface. No wear particles were observed during the pattern-forming mild wear. At high loads, severe wear by plowing occurred, accompanied by wear particles. The film with the highest hardness showed the highest wear resistance. Friction force generated during the scratching was measured, which was closely related with surface deformation of the film. A simple empirical equation to deduce scratch hardness of the film from a linear fixed-distance scratch test was proposed, and scratching-speed dependency of the scratch hardness was displayed.

Length- and parity-dependent electronic states in one-dimensional carbon atomic chains on C(111)

  • Kim, Hyun-Jung;Oh, Sang-Chul;Kim, Ki-Seok;Zhang, Zhenyu;Cho, Jun-Hyung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.56-56
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    • 2010
  • Using first-principles density-functional theory calculations, we find dramatically different electronic states in the C chains generated on the H-terminated C(111) surface, depending on their length and parity. The infinitely long chain has $\pi$ electrons completely delocalized over the chain, yielding an equal C-C bond length. As the chain length becomes finite, such delocalized $\pi$ electrons are transformed into localized ones. As a result, even-numbered chains exhibit a strong charge-lattice coupling, leading to a bond-alternated structure, while odd-numbered chains show a ferrimagnetic spin ordering with a solitonlike structure. These geometric and electronic features of infinitely and finitely long chains are analogous to those of the closed (benzene) and open (polyacetylene) chains of hydrocarbons, respectively.

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Sol-Gel법에의해 제작한 SrBi$_2$$Ta_2O_9$ 장유전체 박막의 특성 (Characterization of ferroelectric SrBi$_2$$Ta_2O_9$/ thin films prepared by Sol-Gel method)

  • 추정우;김영록;김영관;손병청;이전국
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.175-179
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    • 1996
  • Ferroelectric SrBi$_2$Ta$_2$$O_{9}$ thin films were fabricated by tole Sol-Gel method using a spin-on coating with MOD(Metal Organic Dccomposition) solution on Pt/Ti/SiO$_2$/Si(100) substratcs. The films were anncalcd at 80$0^{\circ}C$ for one hour in oxygen atmosphere. The effects of Bi/Ti mole ratios on crystalline orientations, surface morphologies, and subface composition SBT thin films with a Bi/Ta mole ratios from 1.1 to 1.3 were investigated using X-ray Diffractometry (XRD). Atomic Force (AFM), X-Ray Photoelectron Spectroscopy(XPS). Ferroelectric properties of these films were also measured.d.

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Exchange Bias Coupling Depending on Uniaxial Deposition Field of Antiferromagnetic FeMn Layer

  • Lee, Sang-Suk;Hwang, Do-Guwn
    • Journal of Magnetics
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    • 제15권1호
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    • pp.17-20
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    • 2010
  • The relationship between ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration was investigated for various angles of the uniaxial deposition magnetic field of the FeMn layer in the Corning glass/Ta(5nm)/NiFe(7nm)/FeMn(25nm)/Ta(5nm) multilayer that was prepared by the ion beam sputter deposition. The exchange bias field ($H_{ex}$) obtained from the measurement of the easy-axis MR loop decreased to 40 Oe at the deposition field angle of $45^{\circ}$, and to 0 Oe at the angle of $90^{\circ}$. When the difference between the uniaxial axis between the ferromagnet NiFe and the antiferromagnet FeMn was $90^{\circ}$, the strong antiferromagnetic dipole moment of FeMn caused the weak ferromagnetic dipole moment of NiFe to rotate in the interface.