• Title/Summary/Keyword: Atomic spin

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A First-principles Study on the Effects on Magnetism of Si Impurity in BCC Fe by Considering Spin-orbit Coupling (스핀-궤도 상호작용을 고려한 Si 불순물이 BCC Fe의 자성에 미치는 영향에 대한 제일원리연구)

  • Rahman, Gul;Kim, In-Gee;Chang, Sam-Kyu
    • Journal of the Korean Magnetics Society
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    • v.18 no.6
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    • pp.211-216
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    • 2008
  • The effects of Si impurity on electronic structures and magnetism of bcc Fe are investigated by using a first-principles method by considering spin-orbit coupling. In order to describe the Si impurity, a 27 atomic bcc Fe supercell has been considered. The Kohn-Sham equation was solved in terms of the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). The effects of spin-orbit coupling were calculated self-consistently by considering spin-diagonal terms based on second variation method. For the ferromagnetic (FM) state without considering SOC, the spin magnetic moment of the Si impurity was calculated to be $-0.143{\mu}B$, while the magnetic moments of Fe atoms were calculated to be $2.214{\mu}B$, $2.327{\mu}B$, and $2.354{\mu}B$ in away from the Si atom, respectively. However, the FM state with considering SOC, the spin magnetic moment of the Si impurity was calculated to be $-0.144{\mu}B$, which is not affected significantly by SOC, but the spin magnetic moments of Fe atoms were calculated $2.189{\mu}B$, $2.310{\mu}B$, and $2.325{\mu}B$, respectively, which are much reduced value compared to those of the FM state without SOC. Comparing the total charge density and spin density, those features are thought to be originated by the screening distortions of the Fe $t_{2g}$ orbital, which can be obtained by considering SOC.

The Preparation and Magnetic Properties in Ba-ferrite Film (Ba-ferrite 박막의 제조 및 자기적 특성에 관한 연구)

  • Sur, Jung-Chul;Kim, Dae-Sung;Ha, Tae-Yang;Lee, Jae-Gwang
    • Journal of the Korean Magnetics Society
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    • v.13 no.2
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    • pp.64-69
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    • 2003
  • Ba-ferrite thin films were prepared on Si substrate with ${\alpha}$-Fe$_2$O$_3$ underlayer by a pulsed laser deposition system and characterized by X-ray, SEM, Mossbauer spectroscopy and VSM. The appropriate conditions of pulsation in ${\alpha}$-Fe$_2$O$_3$ and Ba-ferrite were the oxygen pressure of 0.1 Torr at a substrate temperature of 400$^{\circ}C$. Ba-ferrite crystals had the forms of ellipsoidal or needle and the grains shaped the more lumps with increasing the film thickness. Mossbauer spectroscopy assured that the direction of atomic spin in Fe ion was not random but had the tendency of arrangement normal to the substrate. The coercive force and squareness of hysteresis were larger in normal than in plane to the substrate but, the magnetic saturation moment was contrary to them. The spin arrangement was strongly affected by ${\alpha}$-Fe$_2$O$_3$ underlayer and the high coercive force and squareness were influenced by this. The crystal structure was conformed to be a Magntoplumbite symmetry with the hexagonal unit cell and the lattice constant of a increased with increasing film thickness, while c decreased

The Spin Reorientations in $\alpha-Fe_2O_3$ Thin Film ($\alpha-Fe_2O_3$ 박막에서 스핀 재 정렬에 관한 연구)

  • 서정철;이호선
    • Journal of the Korean Magnetics Society
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    • v.11 no.1
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    • pp.21-25
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    • 2001
  • $\alpha$-Fe$_2$O$_3$ thin films were prepared on Si substrate by a pulsed laser deposition system and characterized by X-ray and Mossbauer spectroscopy. The appropriate conditions of pulsation was the power of 5.128 W/cm2 at on oxygen pressure of 0.1 Torr at a substrate temperature of 30$0^{\circ}C$. After that the film was heated at 80$0^{\circ}C$ for 1 day. The particles shape deposited on the film was ellipsoidal and the average length and width were 200~300 nm, 70~150 am respectively. The crystal structure was conformed to be of corundums symmetry with the hexagonal unit cell having a lattice constant of u = 5.03$\pm$0.05 $\AA$, c = 13.735$\pm$0.05 $\AA$. The average angles between the atomic spin and the magnetic hyperfine field of Fe ion were 38$^{\circ}$and 48$^{\circ}$ at above and blow the Morin transition temperature respectively. The Morin transition was found to occur at the temperature ranges from 200 K to room temperature and atomic spin direction was assumed to change from 48$^{\circ}$ to 80$^{\circ}$in respect to the c-axis.

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Detection of Gamma-irradiated Imported Foods (Perilla seeds, Almonds, and Soybeans) by Using PSL, TL, and ESR (PSL, TL 및 ESR 분석을 통한 수입산 들깨, 아몬드 및 대두의 방사선 조사 여부 판별 특성)

  • Han, In-Jun;Yoon, Young-Min;Choi, Soo-Jeong;Song, Beom-Seok;Kim, Jae-Kyung;Park, Jong-Heum;Lee, Ju-Woon;Kim, Jae-Hun;Kim, Kyu-Heon;Cho, Tae-Yong;Yoon, Hae-Sung;Han, Sang-Bae;Lee, Jung-Eun
    • Journal of Radiation Industry
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    • v.6 no.4
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    • pp.305-310
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    • 2012
  • This study examined radiation detection properties of imported perilla seeds, almonds, and soybeans. Food samples were irradiated at doses of 0.5, 1, 2, and 4 kGy and analyzed by photo-stimulated luminescence (PSL), thermoluminescence (TL), and electron spin resonance (ESR). The results of PSL showed that photon counts of irradiated perilla seeds and soybeans were $32,959counts{\cdot}60sec^{-1}$ and $7,234counts{\cdot}60sec^{-1}$, respectively, at an irradiation dose of 0.5 kGy, and the photon count of irradiated almonds was $5,581counts{\cdot}60sec^{-1}$ at an irradiation dose of 1 kGy. The results of TL showed that this technique is useful for detecting irradiated samples; the TL ratios ($TL_1/TL_2$) measured for the food samples at an irradiation dose of 0.5 kGy were 0.2301 for perilla seeds, 0.4595 for almonds, and 0.4827 for soy beans. Lastly, results of ESR spectroscopy for only soybeans revealed specific signals derived from free radicals captured in the cellulose. In conclusion, PSL, TL, and ESR methods can be used for the detection of gamma-irradiated soybean samples, whereas gamma-irradiated perilla seeds and almonds can be confirmed by a serial detection with a TL method after PSL.

Physical and Microbiological Approach in Proving the Identity of Gamma-irradiated Different Teas

  • Kausar, Tusneem;Kim, Byeong-Keun;Kim, Dong-Ho;Kwon, Joong-Ho
    • Food Science and Biotechnology
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    • v.14 no.1
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    • pp.1-5
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    • 2005
  • Photostimulated luminescence (PSL), thermoluminescence (TL), electron spin resonance (ESR), and direct epiflourescent filter technique/aerobic plate count (DEFT/APC) were applied to detect dried green, black, and oolong teas irradiated between 0-10 kGy. Teas irradiated at 2.5 kGy and higher showed over 5000 photon counts/60 sec, while non-irradiated teas yielded 650-1000 photon counts/60 sec. TL glow curves for minerals separated from teas were detected at about $300^{\circ}C$ with low intensity in non-irradiated samples, whereas around $150^{\circ}C$ with high intensity in all irradiated samples. Ratio of $TL_1/TL_2$ based on re-irradiation step, showing lower than 0.1 and higher than 1.44 for non-irradiated and irradiated samples, respectively, enhanced reliability of TL results. ESR measurements for irradiated teas showed signals specific to irradiation. Log DEFT/APC ratio increased with irradiation dose; this result could be applied to identify irradiated tea samples.

High Crystalline Epitaxial Bi2Se3 Film on Metal and Semiconductor Substrates

  • Jeon, Jeong-Heum;Jang, Won-Jun;Yun, Jong-Geon;Gang, Se-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.302-302
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    • 2011
  • The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).

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Investigation of the Effects of ZnO Thin Film Deposition Methods on Inverted Polymer Solar Cells (다양한 박막 형성법을 사용한 ZnO 전자 추출층이 역구조 고분자 태양전지에 미치는 영향 연구)

  • Lee, Donggu;Noh, Seunguk;Sung, Myungmo;Lee, Changhee
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.59-62
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    • 2013
  • We investigated the effects of ZnO thin film deposition methods on the performance of inverted polymer solar cells with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Al. The ZnO thin films were deposited by various methods (spin coating of nanoparticles, sol-gel process, atomic layer deposition) and their morphology was analyzed by atomic force microscopy (AFM). The device with ZnO nanoparticle thin films showed the highest power conversion efficiency of 3 % with low series resistance and high shunt resistance. The superior performance of the device with the ZnO nanoparticle layer is attributed to better electron extraction capability.

Annealing Effect on $SnO_2$ Thin Films Properties ($SnO_2$ 박막 특성에 미치는 annealing 효과)

  • Park, Kyung-Hee;Seo, Yong-Jin;Lee, Woo-Sun;Park, Jin-Seong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.99-102
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    • 2003
  • Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.

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Structural Analysis and Magnctic Propcrics of Amorphous $Fe_{78}Si_{9}B_{13}$ Alloy (비정질 $Fe_{78}Si_{9}B_{13}$ 합금의 구조와 자성 연구)

  • 이희복;송인명;유성초;임우영
    • Journal of the Korean Magnetics Society
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    • v.3 no.3
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    • pp.179-184
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    • 1993
  • The X-ray diffraction pattern of amorphous $Fe_{78}Si_{9}B_{13}$ alloy was analyzed to obtain the radial distribution function (RDF) where the first peak was in the form of Gaussian function. The calculated coordination number of the form of Gaussian functiono The calculated coordination number of the sample is 13.5, the mean distance betweeon near-neighbor atoms $r_{0}$ is $2.595{\AA}$ and a Gaussian parametet ${\delta}r$ indicating near-neighbor atomic distri-bution is $0.27{\AA}$. The temperature dependence of saturated magnetization at low temperature could be explained by spin wave excitations theory yielding the spin wave stiffness constant as $117.8\;meV\;{\AA}^2$. Also, we tried to fit the observed temperature dependence of saturated magnetization with the Handrich's equation of the modified molecular field theory for the amorphous ferromagnet. Nice fittings are obtained when we used the parameters ${\Delta}=0.32$(S=1/2) and ${\Delta}=0.23$(S=1), respectively. Finally, the calculated spin wave stiffness constant using the parameters and the structural data are $149\;meV\;{\AA}^2$ for S=1/2 and $138\;meV\;{\AA}^2$ for S=1, respectively. The mean exchange coupling integral between near-neighbor atoms was estimated to be 17.9 meV for S=1/2 and 6.7 meV for S=1.

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Detection of Gamma-Irradiation Treatment in Imported Spices by ESR Spectroscopy (ESR spectroscopy에 의한 감마선 조사된 수입 향신료의 검지)

  • Han, Jeong-Eun;Lee, Eun-Jeong;Yang, Jae-Seung
    • Korean Journal of Food Science and Technology
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    • v.35 no.6
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    • pp.1060-1063
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    • 2003
  • Electron spin resonance (ESR) spectroscopy was used to investigate the effects of irradiation doses and storage times on three spices. Three imported spices (Brassica juncea, Origanum vulgare, Laurus nobilis) were irradiated with doss of 0, 1, 5 and 10 kGy using a Co-60 irradiator at room temperature. ESR signals were measured from each sample by a Bruker-EPR spectrometer. The gamma-irradiated Brassica and Laurus nobilis exhibited characteristic signals, which were different from those of the non-irradiated ones. Non-irradiated and irradiated Origanum vulgare exhibited single lines, with higher ESR signals in irradiated sample than in non-irradiated sample. The ESR signals increased linearly with increasing irradiation doses $(1{\sim}10kGy)$. A strong positive correlation coefficient $(R^2=0.9939{\sim}0.9993)$ was obtained between the irradiation doses and the corresponding ESR signal intensities. Although the ESR signal intensities decreased with storage time, signals from the three irradiated spices were observed even after 12 weeks of storage at room temperature.