• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.207-215
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• 2024

This study focuses on measuring the levels of naturally occurring radioactivity in the soil of Swabi, Khyber Pakhtunkhwa, Pakistan, as well as the associated health hazard. Thirty (30) soil samples were collected from various locations and analyzed for ²²⁶Ra, ²³²Th, and ⁴⁰K radioactivity levels using a High Purity Germanium detector (HPGe) gamma-ray spectrometer with a photo-peak efficiency of approximately 52.3%. The average values obtained for these radionuclides are 35.6 ± 5.7 Bqkg^-1, 47 ± 12.5 Bqkg^-1, and 877 ± 153 Bqkg^-1, respectively. The level of ²³²Th is slightly higher and ⁴⁰K is 2.2 times higher than the internationally recommended limit of 30 Bqkg^-1 and 400 Bqkg^-1, respectively. Various parameters were calculated based on the results obtained, including Radium Equivalent (Ra_eq), External Hazard (H_ex), Absorbed Dose Rate (D), Annual Gonadal Equivalent Dose (AGDE), Annual Effective Dose Rate, and Excess Lifetime Cancer Risk (ELCR), which are 170.3 ± 24 Bqkg^-1, 0.46 ± 0.06 Bqkg^-1, 81.4 ± 2.04 nGy h^-1, 582 ± 78.08 µSvy^-1, 99.8 ± 13.5 µSv Gy^-1, and 0.349 ± 0.04, respectively. These values are below the limits recommended by the United Nations Scientific Committee on the Effects of Atomic Radiation (UNSCEAR) in 2002. This study highlights the potential radiation threats associated with natural radioactivity levels in the soil of Swabi and provides valuable information for public health and safety.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.3
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• pp.345-353
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• 2022

This study aimed to fundamentally understand changes of cell parameters of cation-exchanged mordenites using high resolution X-ray powder diffraction for studies that immobilization of various heavy metal cation using synthesis mordenite (Na_6.6Al_6.6Si_41.4O₉₆·20.4H₂O, Na-MOR). As a results of measurement by Thermogravimetric analysis (TGA), it was confirmed that 19.4, 20.4 water molecules per unit cell were present in monovalent-cation substituted MOR (Cs-MOR, Na-MOR), and 21, 23.1, 23.2 water molecules per unit cell were present in divalent-cation substituted MOR (Pb-MOR, Sr-MOR, Cd-MOR). The space group of all the samples were identified as Cmcm belonging to the orthorhombic crystal system. Compared to Na-MOR, starting material, relative peak intensity of (110) and (200) is significantly changed after cation substitution whereas peak position is almost similar. Also, (220) peak that was not found in Na-MOR was clearly observed in Pb-, Cd- and Sr-exchanged MOR. Thus, it was estimated that changes of atomic distribution usually occurred on ab-plane while changes of cell parameters were little. Detailed changes in the cell parameters of cation-exchanged mordenites were derived from whole profile fitting method using the GSAS suite program. Changes in the axial lengths and unit cell volume of cation substitution showed different relationship depending on ionic radius and charge number. In case of monovalent-cation substituted MOR, the length of a-axis increases whereas the length of b- and c-axis decrease by absorbed cation radius. In the case of divalent-cation exchanged MOR, the length of a-axis usually decreases while the length of b- and c-axis increases by cation radius. It was confirmed that unit cell volume of monovalent and divalent cation substituted MORs had an independent tendency by cation radius.

• Economic and Environmental Geology
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• v.50 no.2
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• pp.117-128
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• 2017

Occurrence characteristics and existing forms of U-Th containing minerals in KURT (KAERI Underground Research Tunnel) granite are investigated to understand long-term behavior of radionuclides in granite considered as a candidate rock for the geological disposal of high-level radioactive waste. KURT granite primarily consists of quartz, feldspar and mica. zircon, REE(Rare Earth Element)-containing monazite and bastnaesite are also identified. Besides, secondary minerals such as sericite, microcline and chlorite including quartz vein and calcite vein are observed. These minerals are presumed to be accompanied by a post-hydrothermal process. U-Th containing minerals are mainly observed at the boundaries of quartz, feldspar and mica, mostly less than $30{\mu}m$ in size. Quantitative analysis results using EPMA (Electron Probe Micro-Analyzer) show that 74.2 ~ 96.5% of the U-Th containing minerals consist of $UO_2$ (3.39 ~ 33.19 wt.%), $ThO_2$ (41.61 ~ 50.24 wt.%) and $SiO_2$ (15.43 ~ 18.60 wt.%). Chemical structure of the minerals calculated using EPMA quantitative analysis shows that the U-Th minerals are silicate minerals determined as thorite and uranothorite. The U-Th containing silicate minerals are formed by a magmatic and hydrothermal process. Therefore, KURT granite formed by a magmatic differentiation is accompanied by an alteration and replacement owing to a hydrothermal process. U-Th containing silicate minerals in KURT granite are estimated to be recrystallized by geochemical factors and parameters such as temperature, pressure and pH owing to the hydrothermal process. By repeated dissolution/precipitation during the recrystallization process, U-Th containing silicate minerals such as thorite and uranothorite are formed according to the variation in the concentrated amount of U and Th.

• Nuclear Engineering and Technology
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• v.22 no.4
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• pp.337-350
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• 1990

A post-irradiation annealing study was conducted with use of reactor pressure vessel(RPV) steel A533B Cl.1 base metal irradiated to a dose of 4.84$\times$10$^{18}$ n/$\textrm{cm}^2$ at about 38$0^{\circ}C$. Microhardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurs in the temperature range of 280-3O5$^{\circ}C$, Michrohardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurrs in the temperature range of 280-305$^{\circ}C$. The variations of Ip, Iw and R parameters indicated that the formation of vacancy clusters by vacancy agglomeration and the annihilation of monovacancies are the first recovery process. The second recovery process occurs in the range of 405-49$0^{\circ}C$ and positron annihilation parameters measured indicated that the dissolution of carbon atoms decorated around vacancy-type defects and possible precipitates, and the annihilation of monovacancies give rise to the second recovery process. It was further indicated that radiation anneal hardening (RAH) in the range of 305-405$^{\circ}C$ between the temperature ranges for the two processes occurs due to the formation of carbon-decorated vacancy clusters and precipitates. The activation energies, orders of reaction and other characteristics of recovery processes were determined by the Meechan-Brinkman method. The activation energy for the first recovery process was determined as 1.76 eV and that for the second recovery process as 2.00eV. These values are lower than those obtained by other workers. This difference may be attributed to the lower copper content of the RPV steel used in the present study. The order of reaction for the first recovery process was determined as 1.78, while that for the second recovery process as 1.67 Non-integer orders of reaction for recovery processes seem to be attributed to the fact that several mechanisms for the first order and the second order of reaction are compounded in one process. This result also supports for the above conclusions from measurements of PA parameters.

• Nuclear Engineering and Technology
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• v.28 no.2
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• pp.118-128
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• 1996

The lattice parameters of stoichiometric $UO_2$ and $U_{1-y}Er_{y}O_2$ in the range of y=0.01 to y =0.33 were determined with use of X-ray diffraction data. Oxygen potentials have been measured by means of a thermogravimetric method in the range of 1200~$1500^{\circ}C$ and $10^{-14}$ $\leq$ $Po_2$ $\leq$ $10^{-3}$ for pure $UO_2$ and $U_{1-y}Er_{y}O_{2{\pm}x}$ solid solutions with y=0.02, y=0.06 and y=0.20, respectively. Their oxygen partial pressures were maintained by controlling $CO_2$/CO mixture atmosphere, and the $Po_2$ values corresponding to x of $U_{1-y}Er_{y}O_{2{\pm}x}$ solid solutions were measured with an electrolyte oxygen sensor. The lattice parameter decreases linearly with an increase in the erbium content. The change of the lattice parameter can be expressed in a linear equation of y as a($\AA$) =5.4695-0.220y for 0 $\leq$y$\leq$0.33. The experimental coefficient of y -0.220 in $U_{1-y}Er_{y}O_2$ was an intermediate value between the calculated values -0.273 and -0.156 in the case of $U^{5+}$ and $U^{6+}$, respectively. The (equation omitted) has been found to undergo abrupt increase in the range of -360 to -270 kJ/mole for y=0.06 and -320 to -220 H/mole for y=0.20, respectively, in the temperature range of 1200-$1500^{\circ}C$. (equation omitted) increases with erbium content, but the effect of the dopant for x =0.01 is less significant than that for stoichiometry. The oxygen potentials for $UO_2$ and $U_{0.98}Er_{0.02}O_{2+x}$ can be approximately represented by the $U^{5+}$/$U^{4+}$ model but those for y$\geq$ 0.06 in $U_{1-y}Er_{y}O_{2{\pm}x}$ solid solutions cannot be interpreted by the mean uranium valence model.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Korean Journal of Food Science and Technology
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• v.36 no.5
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• pp.701-710
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• 2004

Uncertainty was quantified to evaluate calcium determination result in infant formula with AAS (Atomic Absorption Spectrometry) and ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry). Uncertainty sources in measurand, such as sample weight, final volume of sample, sample dilution and the instrumental result were identified and used as parameters for combined standard uncertainty based on the GUM (Guide to the expression of uncertainty in measurement) and Draft EURACHEM/CITAC Guide. Uncertainty components of each sources in measurand were identified as resolution, reproducibility and stability of chemical balance, standard material purity, standard material molecular weight, standard solution concentration, standard solution dilution factor, sample dilution factor, calibration curve, recovery, instrumental precision, reproducibility, and stability, Each uncertainty components were evaluated by uncertainty types and included to calculate combined uncertainty. The kinds of uncertainty sources and components in the analytical method by AAS and ICP-AES were same except sample dilution factor for AAS. The analytical results and combined standard uncertainties of calcium content were estimated within the certification range $(367{\pm}20\;mg/100g)$ of CRM (Certified Reference Material) and were not significantly different between method by AAS followed by ashing and method by ICP-AES followed by acid digestion as $359.52{\pm}23.61\;mg/100g\;and\;354.75{\pm}16.16\;mg/100g$, respectively. Identifying uncertainty sources related with precision, repeatability, stability, and maintaining proper instrumental conditions as well as personal proficiency was needed to reduce analytical error.

• Journal of Radiation Protection and Research
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• v.40 no.1
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• pp.1-9
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• 2015

Compton cameras overcome several limitations of conventional mechanical collimation based gamma imaging devices, such as pin-hole imaging devices, due to its electronic collimation based on coincidence logic. Especially large-scale Compton camera has wide field of view and high imaging sensitivity. Those merits suggest that a large-scale Compton camera might be applicable to monitoring nuclear materials in large facilities without necessity of portability. To that end, our research group have made an effort to design a large-scale Compton camera for safeguard application. Energy resolution or position resolution of large-area detectors vary with configuration style of the detectors. Those performances directly affect the image quality of the large-scale Compton camera. In the present study, a series of Geant4 Monte Carlo simulations were performed in order to examine the effect of those detector parameters. Performance of the designed large-scale Compton camera was also estimated for various monitoring condition with realistic modeling. The conclusion of the present study indicates that the energy resolution of the component detector is the limiting factor of imaging resolution rather than the position resolution. Also, the designed large-scale Compton camera provides the 16.3 cm image resolution in full width at half maximum (angular resolution: $9.26^{\circ}$) for the depleted uranium source considered in this study located at the 1 m from the system when the component detectors have 10% energy resolution and 7 mm position resolution.

• The Korean Journal of Pesticide Science
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• v.2 no.3
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• pp.64-69
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• 1998

New thirty derivatives of 5,6-dihydro-2-trifluoromethyl-1,4-oxathiin carboxanilide as substrate(S) were synthesized and their fungicidal activities in vivo against rice sheath blight(Rhizoctonia solani) and wheat leaf rust(Puccinia recondita) were examined. The structure activity relationships(SAR) between the activities($pI_{50}$) and a physicochemical parameters of substituents(X) at the phenylcarbamoyl group were analyzed using the adaptive regression analysis method. The 3-methoxy, 11, 3-isopropyloxy, 13 and 3-isopropyl substituent, 25 as X on the phenylcarbamoyl group exhibited the most highest fungicidal activity against the two fungi. The fungicidal potency of the (S) against Puccinia recondita was higher than Rhizoctonia solani. In case of Rhizoctonia solani, the molecular hydrophobicity(${\pi}>0$) and resonance effect(R<0) by meta-alkyl substitutents with electron donating were important factors in determining fungicidal activity. And the HOMO energy(HOMO>0), ABSQ, sum of absolute values of the atomic charges on each atom and specific polarizability(Sp.Pol<0) of (S) were significantly influential towards fungicidal activity against Puccinia recondita.. The interaction between (S) and receptor agonist from the based on SAR studies proceeds through charge-control reaction, and conditions to show higher activity has been also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.