• 한국세라믹학회지
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• 제53권3호
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• pp.317-324
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• 2016

Continued miniaturization and increasingly exact requirements for thin film deposition in the semiconductor industry is driving the search for new effective, efficient, selective precursors and processes. The requirements of defect-free, conformal films, and precise thickness control have focused attention on atomic layer deposition (ALD). ALD precursors so far have been developed through a trial-and-error experimental approach, leveraging the expertise and tribal knowledge of individual research groups. Precursors can show significant variation in performance, depending on specific choice of co-reactant, deposition stage, and processing conditions. The chemical design space for reactive thin film precursors is enormous and there is urgent need for the development of computational approaches to help identify new ligand-metal architectures and functional co-reactants that deliver the required surface activity for next-generation thin-film deposition processes. In this paper we discuss quantum mechanical simulation (e.g. density functional theory, DFT) applied to ALD precursor reactivity and state-of-the-art automated screening approaches to assist experimental efforts leading toward optimized precursors for next-generation ALD processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.76.1-76.1
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• 2013

Atomic Layer Deposition (ALD) has remarkably developed in semiconductor and nano-structure applications since early 1990. Now, the advantages of ALD process are well-known as controlling atomic-level-thickness, manipulating atomic-level-composition control, and depositing impurity-free films uniformly. These unique properties may accelerate ALD related industries and applications in various functional thin film markets. On the other hand, one of big markets, Display industry, just starts to look at the potential to adopt ALD functional films in emerging display applications, such as transparent and flexible displays. Unlike conventional ALD process strategies (good quality films and stable precursors at high deposition processes), recently major display industries have suggested the following requirements: large area equipment, reasonable throughput, low temperature process, and cost-effective functional precursors. In this talk, it will be mentioned some demands of display industries for applying ALD processes and/or functional films, in terms of emerging display technologies. In fact, the AMOLED (active matrix organic light emitting diode) Television markets are just starting at early 2013. There are a few possibilities and needs to be developing for AMOLED, Flexible and transparent Display markets. Moreover, some basic results will be shown to specify ALD display applications, including transparent conduction oxide, oxide semiconductor, passivation and barrier films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.274-274
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• 2013

We fabricate encapsulation-layer of OLED panel from organic-inorganic hybrid thin film by atomic layer deposition (ALD) molecular layer deposition (MLD) using Al2O3 as ALD process and Adipoyl Chloride (AC) and 1,4-Butanediamine as MLD process. Ellipsometry was employed to verify self-limiting reaction of MLD. Linear relationship between number of cycle and thickness was obtained. By such investigation, we found that desirable organic thin film fabrication is possible by MLD surface reaction in monolayer scale. Purging was carried out after dosing of each precursor to eliminate physically adsorbed precursor with surface. We also confirmed roughness of the organic thin film by atomic force microscopy (AFM). We deposit AC and 1,4-Butanediamine at $70^{\circ}C$ and investigated surface roughness as a function of increasing thickness of organic thin film. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates super-lattice film can be possibly use as encapsulation in flexible devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2032-2037
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• 2007

Numerical analysis was conducted to investigate the atomic layer deposition(ALD) of silicon nitride using silane and ammonia as precursors. The present study simulated the surface reactions for as-deposited $Si_3N_4$ as well as the kinetics for the reactions of $SiH_4$ and $NH_3$on the semiconductor wafer. The present numerical results showed that the ALD process is dependent on the activation constant. It was also shown that the low activation constant leads to the self-limiting reaction required for the ALD process. The inlet and wafer temperatures were 473 K and 823 K, respectively. The system pressure is 2 Torr.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• 전기화학회지
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• 제22권2호
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• pp.60-68
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• 2019

이차 전지의 고전압 구동은 기존 셀 구조의 변화 없이도 고용량을 구현할 수 있는 유용한 접근 방법 중에 하나이나, 전극 표면에서의 극심한 부반응과 전극 활물질의 구조 붕괴 등과 같은 문제를 야기하게 된다. 본 연구에서는 니켈-망간-코발트 삼성분계(NCM) 활물질을 도입한 양극의 고전압 구동을 위해 원자층 증착법 (Atomic Layer Deposition, ALD)을 통해 전극판 표면에 $Al_2O_3$와 ZnO층으로 구성된 코팅 층을 형성하였다. 기존 ALD법으로 제조되는 박막에 비해 유사한 조건에서도 두꺼운 Al-doped ZnO (AZO)층을 최초로 형성하였고, 코팅된 AZO층의 두께를 달리한 NCM 기반의 양극판을 제조하였다. ALD 코팅된 양극이 도입된 코인셀을 제조하여 두껍게 형성된 코팅 층의 두께에 따른 고전압에서 충방전 거동을 확인하였다.

• 한국분말재료학회지
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• 제23권2호
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• pp.170-176
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• 2016

Lithium-ion batteries (LIBs) are rapidly improving in capacity and life cycle characteristics to meet the requirements of a wide range of applications, such as portable electronics, electric vehicles, and micro- or nanoelectro-mechanical systems. Recently, atomic layer deposition (ALD), one of the vapor deposition methods, has been explored to expand the capability of LIBs by producing near-atomically flat and uniform coatings on the shell of nanostructured electrodes and membranes for conventional LIBs. In this paper, we introduce various ALD coatings on the anode, cathode, and separator materials to protect them and improve their electrochemical and thermomechanical stability. In addition, we discuss the effects of ALD coatings on the three-dimensional structuring and conduction layer through activation of electrochemical reactions and facilitation of fluent charge collection.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.106-111
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• 2003

Tantalum nitride(TaN) films were deposited by atomic layer deposition(ALD) and plasma assisted atomic layer deposition(PAALD). The deposition of the TaN thin film has been performed using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia($NH_3$) as precursors at temperature of $250^{\circ}C$, where the temperature was proven to be ALD window for TaN deposition from our previous experiments. The PAALD deposited TaN film shows better physical properties than thermal ALD deposited TaN film, due to its higher density$(~11.59 g/\textrm{cm}^3$) and lower carbon(~ 3 atomic %) and oxygen(~ 4 atomic %) concentration of impurities.