• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Applied Chemistry for Engineering
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• v.18 no.4
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• pp.356-360
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• 2007

Recently, dye sensitized solar cells (DSSCs) composed of nanoporous $TiO_2$, light-sensitive dyes, electrolytes, and counter electrode have been received much attention. Nanostructured particles with higher surface area for the higher adsorption of Ru (II) dye are required to increase the quantity of light absorption. Also, it has been reported that the key factor to achieve high energy conversion efficiency in the photoelectrode of DSSC is the heat treatment of $TiO_2$ paste with acid addition. In this work, we investigated the influence of acid treatment of $TiO_2$ solar cell on the photovoltaic performance of DSSC. The working electrodes fabricated in this work were characterized by X-ray photoelectron spectroscopy (XPS), extended X-ray absorption fine structure (EXAFS), field emission scanning electron microscope (FE-SEM), and atomic force microscope (AFM). In addition, the influence of nanostructured photoelectrode fabricated with the acid-treated paste on the energy conversion efficiency was investigated on the basis of photocurrent-potential curves. It was found that the influence of acid-treated paste on the photovoltaic efficiency was significant.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.301-311
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• 1994

The growth of amorphous and first crystalline phase, and phase sequence by solid state reaction were examined in Co/Si multilayer thin films by DSC and XRD. The experimental results were compared with the results expected by effective driving force models, PDF and effective heat of formation models.Amorphous phase growth was not observed in Co/Si system and it was consistent with the predicted result by effective driving force. It was observed that the first crystalline phase is CoSi. According to the PDF and effective heat of formation models, the first crystalline phases were CoSi and $CO_2Si$, respectively. The experiemental results were coincident with the PDF model considering structure factors. In case of the atomic concentration ratios of 2Co : 1Si and 1Co : 2Si, the phases sequences were $CoSi\to Co_2Si$ and $CoSi \to Co_2Si \to CoSi \to CoSi_2$, respectively and it was analysized through the effective heat of formation model. The formations of CoSi, $CO_2Si$ and $COSi_2$ in initial stage were controlled by nucleation and the activation energies for the nucleation of three phases were 1.71, 2.34 and 2.79eV.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.591-596
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• 2006

Topology and molecular ordering of NPD(4,4'-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl) thin films deposited under magnetic field with post-deposition annealing were investigated. NPD was deposited onto ITO glass substrates via thermal evaporation process in vacuum. It is of great importance for highly oriented organic/metal films to have improved device performances such as higher current density and luminance efficiency. AFM (Atomic Force Microscope) and XRD (X-Ray Diffraction) analyses were used to characterize the topology and structure of oriented NPD films. The multi-source meter was used to observe the current-voltage characteristics of the ITO (Indium-Tin Oxide) / NPD (4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl) / Al (Aluminum) device. While NPD thin films deposited under magnetic field were not molecularly well aligned according to the XRD results, the films after post-deposition annealing at $130^{\circ}C$ were well-oriented. AFM images show that NPD thin films deposited under magnetic field had a smoother surface than those deposited without magnetic field. The current-voltage performance of NPD thin films was improved due to the enhanced electron mobility in the well-aligned NPD films.

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.213-218
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• 2016

This study reviewed mineral composition on Scoria samples of this area, atomic value state of oxidized steel, and magnetic property in order to look into characteristics of scoria that was distributed in southern area of mountainous areas, Halla Mt. of Jeju Island. By XRD analysis, mineral composition was confirmed, and characteristics of iron compounds existed in samples were investigated through $M{\ddot{o}}ssbauer$ spectroscope. Composing minerals could be learnt as feldspar basalt from XRD analysis because composting minerals were composed of quartz and feldspar anorite mainly, and iron compounds were made up with olivine, pyroxene, ilmenite, hematite, and magnetite. By $M{\ddot{o}}ssbauer$ spectroscope analysis on these iron compounds. it consisted of hematite and magnetite which showed hyperfine magnetic field of sextet mostly, and also doublet by olivine, pyroxene, ilmenite could be seen as appearing together. As a result of comparing with samples of Jeju western area having been announced in previous research, I.S. and Q.S. values of olivine, $Fe^{2+}$, were 122 mm/s and 3.09~3.13 mm/s respectively, and a fact could be known that $Fe^{2+}$ olivine having similar structure each other was contained, and the ratio of $Fe^{3+}/Fe_{tot.}$. was 85.90~92.82 %. From these findings, it was able to be presumed that they belonged to samples having been formed on the land at the same period of time. As a result of investigating area ratio of tetrahedron (A site) and octahedron (B site) regarding magnetite in samples, it was turn out to be 0.22~0.55 less than 2.

• Food Science of Animal Resources
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• v.37 no.1
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• pp.123-133
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• 2017

The development of a new manufacturing process, a two-step temperature treatment, to modulate the physicochemical properties of nanoparticles including the size is critical. This is because its physicochemical properties can be key factors affecting the cellular uptake and the bioavailability of bioactive compounds encapsulated in nanoparticles. The aims of this study were to produce (beta-lactoglobulin) ${\beta}-lg$ nanoparticles and to understand how two-step temperature treatment could affect the formation and physicochemical properties of ${\beta}-lg$ nanoparticles. The morphological and physicochemical properties of ${\beta}-lg$ nanoparticles were determined using atomic force microscopy and a particle size analyzer, respectively. Circular dichroism spectroscopy was used to investigate the secondary structure of ${\beta}-lg$. The surface hydrophobicity and free thiol groups of ${\beta}-lg$ were increased with a decrease in sub-ambient temperature and an increase in mild heat temperature. As sub-ambient temperature was decreased, a decrease in ${\alpha}-helical$ content and an increase in ${\beta}-sheet$ content were observed. The two-step temperature treatment firstly involved a sub-ambient temperature treatment from 5 to $20^{\circ}C$ for 30 min, followed secondly by a mild heat temperature treatment from 55 to $75^{\circ}C$ for 10 min. This resulted in the production of spherically-shaped particles with a size ranging from 61 to 214 nm. Two-way ANOVA exhibited the finding that both sub-ambient and mild heat temperature significantly (p<0.0001) affected the size of nanoparticles. Zeta-potential values of ${\beta}-lg$ nanoparticles were reduced with increasing mild heat temperature. In conclusion, two-step temperature treatment was shown to play an important role in the manufacturing process - both due to its inducement of the conformational changes of ${\beta}-lg$ during nanoparticle formation, and due to its modulation of the physicochemical properties of ${\beta}-lg$ nanoparticles.

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.3
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• pp.343-355
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• 2006

Statement of problem. The success of osseointegration can be enhanced with an implant that has improved surface characteristics. Anodic oxidation is one of the surface modifying method to achieve osseointegration. Voltage of anodic oxidation can change surface characteristics and cell activity Purpose. This study was performed to evaluate MG63 cell responses such as affinity, proliferation and to compare surface characteristics of anodic oxidized titanium in various voltage. Material and method. The disks for cell culture were fabricated from grade 3 commercially pure titanium,1 m in thickness and 12 mm in diameter. Surfaces of 4 different roughness were prepared. Group 1 had a machined surface, used as control. Group 2 was anodized under 220 V, group 3 was anodized under 300 V and group 4 was anodized under 320 V. The microtopography of specimens was observed by scanning electron microscope (JSM-840A, JEOL, Japan) and atomic force microscope(Autoprobe CP, Park Scientific Instrument, USA). The surface roughness was measured by confocal laser scanning microscope(Pascal, LSM5, Zeiss, Germany). The crystal structure of the titanium surface was analyzed with x-ray diffractometer(D8 advanced, Broker, Germany). MG63 osteoblast-like cells were cultured on these specimens. The cell morpholgy was observed by field emission electron microscope(Hitachi S-4700, Japan). The cell metabolic and proliferative activity was evaluated by MTT assay Results and conclusion. With in limitations of this in vitro study, the following conclusions were drawn. 1. In anodizing titanium surface, we could see pores which did not show in control group. In higher anodizing voltage, pore size was increased. 2. In anodizing titanium surface, we could see anatase. In higher anodizing voltage, thicker oxide layer increased crystallinity(anatase, anatase and rutile mixed). 3. MG63 cells showed more irregular, polarized and polygonal shape and developed more lamellipodi in anodizing group as voltage increased. 4. The activity of cells in MTT assay increased significantly in group 3 and 4 in comparison with group 1 and 2. However, there was no difference between group 3 and 4 at P<0.05. Proliferation of MG63 cells increased significantly in pore size($3-5.5{\mu}m$) of group 3 and 4 in comparison with in pore size($0.2-1{\mu}m$ ) of group 2.

• Nuclear Engineering and Technology
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• v.5 no.1
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• pp.44-54
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• 1973

In order to clarify an effective procedure of labelling organic chloro compounds by $^{38}$ Cl, phenyl chloro derivatives(7 kinds), chloro nitrobenzenes(6 kinds), chloro anisoles(2 kinds), chloro anilines(3 kinds), chloro toluenes(3 kinds), benzyl cholorides(4 kinds), and other comparing samples(3 kinds) were irradiated in the TRIGA Mark-II research reactor and the inorganic $^{38}$ Cl yields were compared with the irradiation times after extracting the inorganic portion with an aqueous solution of alkali. It was found that the relative change between the inorganic $^{38}$ Cl yield and the irradiadiation time depends a great deal on the state of the sample, and a solid sample gave a lower and steady inorganic yield. The inorganic $^{38}$ Cl yield was decreased in the order of phenyl chloro derivatives < chloro tol uene$^{38}$ Cl yield of homo functional compounds and the number of chlorine atoms on the benzene ring. Generally, poly chloro substituted derivatives could give a higher yield than those of less chloro substituted. The results were discussed and the feasibility of these results for labelling purpose was criticized.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.