• Title/Summary/Keyword: Armorphous Silicon

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The fabrication and characterization of composite $ZnS-SiO_2$ optical films (혼합 $ZnS-SiO_2$ 광학 박막의 제작 및 특성분석)

  • 성창민;이경진;류태욱;정종영;김석원;한성홍
    • Korean Journal of Optics and Photonics
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    • v.9 no.2
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    • pp.70-75
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    • 1998
  • The ZnS-SiO$_2$ composite films were fabricated by codeposition from two independent sources. The optical properties and microstructures of these composite films were investigated. The refractive indices of the composite films were compared those by Drude's fomula and showed a good agreement. it showed that microstructures of composite films are an armorphous. But microstructures of composite films with ion assisted deposition are changed from an armorphous to crystalline with increasing Zn mole fractions. We designed and fabricated a single layer antireflection coating on the crystalline silicon substrate using the refractive index of the composite films.

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A Study of Optimization a-Si:H(p) for n-type c-Si Heterojunction Solar Cell (N-Type c-Si 이종접합 태양전지 제작을 위한 a-Si:H(p) 가변 최적화)

  • Heo, Jong-Kyu;Yoon, Ki-Chan;Choi, Hyung-Wook;Lee, Young-Suk;Dao, Vinh Ai;Kim, Young-Kuk;Yi, Jun-Sin
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.77-79
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    • 2009
  • Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.

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Temperature dependent characteristics of HVTFT for ferroelectric display (강유전체 표시기용 고전압 비정질 실리콘 박막트렌지서트의 온도변화 특성)

  • 이우선;김남오;이경섭
    • Electrical & Electronic Materials
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    • v.9 no.6
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    • pp.558-563
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    • 1996
  • We fabricated high voltage hydrogenerated amorphous silicon thin film transistors (a Si:H HVTFT) and investigated its temperature dependent characteristics of from 303 K to 363 K. The results show that the drain current was decreased at low gate voltage and increased at high gate voltage exponentially. According to the increasing the thickness of a Si layer, drain current increased. Difference of drain current at 363 K was increasd at the lower gate voltage and decreased at the higher gate voltage. When the drain and gate voltage of 100 V applied, the drain current increased linearly with rise temperature.

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