• 제목/요약/키워드: Argon Gas

검색결과 509건 처리시간 0.027초

아르곤 가스를 효율적으로 사용하기 위한 GMA 용접 토치 구조 Part 1 : AMAG와 DMAG 토치가 아르곤 조성에 미치는 영향 (GMA Torch Configuration for Efficient Use of Argon Gas Part 1 : Effects of AMAG and DMAG Torches on Argon Composition)

  • 최상균;문명철;유중돈
    • Journal of Welding and Joining
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    • 제17권6호
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    • pp.38-45
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    • 1999
  • Shielding gas has significant effects on arc stability, metal transfer and weld quality in the gas metal arc welding (GMAW) process. The double gas-shielded MAG(DMAG) and auxiliary gas-shielded MAG (AMAG) torches are investigated for their capability to provide argon-rich gas mixture using small amount of argon gas through the inner and auxiliary nozzles, respectively. Argon composition with the DMAG torch is calculated numerically, and compared with the measured data using the gas chromatogrphy. Gas flow pattern of the DMAG torch is calculated to change from the laminar to turbulent flow when total gas flow rate becomes larger than 4.5 liter/min at room temperature. While argon-rich shielding gas was obtained using both the AMAG and DMAG torches, the AMAG torch provides higher argon composition than the DMAG torch, which demonstrates that argon gas can be utilized more efficiently with the AMAG torch.

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Spatial Distribution of Excited Argon Species in and Inductively Coupled Plasma

  • 최범석
    • Bulletin of the Korean Chemical Society
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    • 제19권11호
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    • pp.1172-1174
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    • 1998
  • Spatial(radial and height) distributions of excited argon species are measured for an inductively coupled plasma under five operating conditions: 1) no carrier gas, 2) carrier gas without aerosol, 3) carrier gas with desolvated aerosol, 4) carrier gas with aerosol, 5) carrier gas with aerosol and excess lithium. A complete RF power mapping of argon excited states is obtained. The excited states of argon for a typical analytical torch rapidly diffuse towards the center in the higher region of the plasma. The presence of excess lithium makes no significant change in the excited states of argon. The increase in the RF power increases the intensity of argon excited states uniformly across the radial coordinate.

아르곤 가스를 효율적으로 사용하기 위한 GMA 용접 토치 구조 Part 2 : AMAG와 DMAG 공정의 비교 (GMA Torch Configuration for Efficient Use of Argon Gas Part 2 : Comparison between AMAG DMAG Process)

  • 문명철;고성훈;유중돈
    • Journal of Welding and Joining
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    • 제17권6호
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    • pp.46-52
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    • 1999
  • The auxiliary gas-shielded MAG (AMAG) process, which was devised to provide an argon-rich shielding environment using small amount of argon gas, was investigated experimentally to figure out its effects on metal transfer and weld quality. Proper conditions for the AMAG process including the argon gas ratio, position and direction of the auxiliary nozzle were determined experimentally. Performance of the AMAG process was compared with that of the double gas-shielded MAG(DMAG) and MAG processes by monitoring the bead profile, current and voltage waveforms. The AMAG process was found to provide better bead profile, more stable arc and wider operating range of spray transfer mode compared with the DMAG process. In general, performance of the AMAG process using the argon ratio of 30% was comparable to that of the MAG process using 80% argon and 20% CO₂ gas.

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질소 이면보호가스 적용성에 관한 연구 (Effect of $N_2$ back shielding gas on the property change of GTA weldment)

  • 백광기;안병식
    • Journal of Welding and Joining
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    • 제5권4호
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    • pp.12-21
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    • 1987
  • To investigate the suitability of nitrogen gas as an internal purging gas, various properties of GTA welded joints of duplex, 316L stainless steel, Cu-Ni alloy pipe using nitrogen purging gas were evaluated with reference to onew purged with argon gas. Mechanical properties evaluated by the tensile, bending test, and hardness value of welded joints with nitrogen gas purging did not show any difference those with argon gas. General and local corrosion rates of each welded joint prepared by nitrogen gas purging also showed no difference with those prepared by argon gas. Based on the present test results it is confirmed that nitrogen is a suitable purging gas for GTA welding of stainless steels and nonferrous piping systems, which can be used at lower cost instead of argon.

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상압 플라즈마의 광 방출 스펙트럼 특성조사에 관한 연구 (The Study on Emission Spectrum Characteristics of Atmosphere Pressure Plasma)

  • 박성진
    • 조명전기설비학회논문지
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    • 제27권2호
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    • pp.77-83
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    • 2013
  • In this study, we aimed to determine the optical properties of the plasma used for the dry cleaning method. The optical properties of the atmospheric pressure plasma device were measured through the degree of ionization of hydrogen or nitrogen gas by ionized atmospheric gas. The degree of ionization of hydrogen or nitrogen is closely associated with surface modification. We observed through our experiments that argon gas, an atmospheric gas, caused an increase in the ionization of nitrogen gas, which has similar ionization energy. This type of increase in nitrogen gas ions is believed to affect surface modification. The results of our study show that the pressure of argon gas and the partial pressure of argon and nitrogen gases lead to different results. This important result shows that argon ions can affect the ionization of nitrogen gas.

물리증착법에 의해 제작한 마그네슘 박막의 형성기구와 내식특성 (Formation Mechanism and Corrosion-Resistance of Magnesium Film by Physical Vapour Deposition Process)

  • 이명훈
    • Journal of Advanced Marine Engineering and Technology
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    • 제18권2호
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    • pp.54-63
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    • 1994
  • Mg thin films were prepared on SPCC(cold-rolled steel) substrates by vasuum evapoaration and ion-plating. The influence of argon gas pressure and substrates bias voltage on the crystal orientation and morphology of the film was determined by using X-ray diffraction and scanning electron micrography (SEM), respectively. And the effect of crystal orientation and morphology of the Mg thin films on corrosion behavior was estimated by measuring the anodic polarization curves in deaerated 3% NaCl solution. The crystal orientation of the Mg films deposited at high argon gas pressure exhibited a (002) preferred orientation, regardless of the substrate bias voltage. Film morphology changed from a columnar to a granular structure with the increase of argon gas pressure. The morphology of the films depended not only on argon gas pressure but also bias voltage ; i.e., the effect of increasing bias voltage was similar to that of decreasing argon gas pressure. The influences of argon gas pressure and bias voltage were explained by applying the adsorption inhibitor theory and the sputter theory. And also, this showed that the corrosion resistance of the Mg thin films can be changed by controlling the crystal orientaton and morphology.

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분광학적 방법에 의한 Plasma Jet의 온도분석 측정 (Spectroscopic Measurement of Temperature Distribution in Some Plasma Jets)

  • 전춘생;박용관;임명선
    • 전기의세계
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    • 제26권2호
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    • pp.104-110
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    • 1977
  • This paper investigates temperature distribution of plasma jets which used argon gas, and nitrogen gas mixed with argon as working fluids in spectroscopic method, and studies correlations between them main results are as follows; 1) The temperature at the center of plasma jet increases with are current and gas flow, and decreases with magnetic flux density along the axial direction. 2) The changing rate of temperature of plasma jet in the radial direction decreases rapidly beyond 2mm from central axis. 3) Temperature drop rate of plasma jet in the central axis direction appears most apparant beyond 13mm above the nozzle exit. 4) When argon gas mixed with a small amount of nitrogen, plasma temperature increases at same are current compared with the case of argon gas only.

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Argon gas 병용처리가 신선편이 감자의 품질에 미치는 영향 (Effects of combined argon gas treatment on the quality of fresh-cut potatoes)

  • 손현주;문광덕
    • 한국식품저장유통학회지
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    • 제21권2호
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    • pp.163-169
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    • 2014
  • 본 연구에서는 argon 가스포장과 기존의 갈변저해물질 중 그 효과가 입증된 ascorbic acid와 저온 blanching 처리 등의 병용처리를 통해 신선편이 감자의 저장 중 품질에 미치는 효과에 대하여 조사하였다. 감자는 박피 후 cube 형태($1.5{\times}1.5{\times}1.5$ cm)로 절단하여 증류수에 1분간 세척 후 물기를 제거하여 argon 가스포장(AR), 1% ascorbic acid에 1분간 침지(AA), 1% ascorbic acid에 1분간 침지 후 argon 가스포장(AAR), $35^{\circ}C$에서 30분간 blanching처리(BA), $35^{\circ}C$ 에서 30분간 blanching처리 후 argon 가스포장(BAR), 아무 처리도 하지 않은 것을 대조구(Cont)로 하여 OPP film에 열접합 포장 후 $5^{\circ}C$에 저장하였다. Cont, AA, BA구의 $O_2$ 농도는 저장기간이 지남에 따라 감소하였으나, argon 가스 포장처리구인 AR, AAR, BAR구에서 $O_2$ 농도는 저장기간이 지남에 따라 조금씩 증가하였다. $CO_2$ 농도는 저장기간이 지남에 따라 모두 증가하였다. 색도 분석 결과 argon 가스포장한 AR, AAR, BAR구에서 Cont, AA, BL구에 비해 높은 $L^*$값과 낮은 갈변도 값을 나타내었으며, 총균수를 분석한 결과 Cont구에서 눈에 띄게 높은 총균수를 나타내었고, argon 가스포장처리구인 AR, AAR, BAR구에서 AA, BL구보다 비교적 낮은 총균수를 나타내어 argon 가스포장이 항갈변 뿐만 아니라 호기성미생물의 생육 저해에 효과가 있음을 알 수 있었다. Polyphenol oxidase(PPO) 활성은 Cont 구에서 눈에 띄게 높은 PPO 활성을 나타내었고 AR처리구에서 가장 낮은 PPO 활성을 나타내었다. DPPH 라디칼 소거능을 이용하여 항산화 활성을 분석해 본 결과 AA, AAR구에서 눈에 띄게 높은 항산화 활성을 나타내었으며, 나머지 구간에는 큰 차이가 없었다. 따라서 argon 가스포장과 병용처리는 신선편이 감자의 갈변 저해, PPO 활성 저해, 항균 효과 등 품질저하를 방지하는데 효과가 있는 것으로 사료된다.

질소와 아르곤 가스를 이용한 플라즈마의 전기적특성 연구 (The study of Electrical Characteristic of Plasma by Nitrogen and Argon)

  • 김동구;박기배;한상도;한상옥
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.323-326
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    • 1998
  • The current-voltage characteristic have been measured in a gas stabilized DC arc generated in a non-transferred arc plasma torch operating on a mixture of argon and nitrogen. Relation between voltage and current to these arcs has been examined by plasma power and current under different flow rates and gas mixture ratios. Firstly, the voltage and current of arc plasma used argon was measured and secondly, in argon-nitrogen mixed gas regime, the flow rate of nitrogen was increased slowly. When the flow rate of nitrogen was increased, electrode drop of potential was increased.

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IC소자용 질화 텅스텐 박막의 면저항 특성 (The Sheet Resistance Properties of Tungsten Nitride Thin films for Intergrated Circuit)

  • 이우선;정용호;김남오;정종상;유병수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.94-97
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    • 1997
  • We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

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