• 전기학회논문지
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• 제59권2호
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• pp.328-332
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• 2010

The SLF(Short Line Fault) breaking capability test for high voltage class $SF_6$ GCB(Gas Circuit Breaker) was conducted. Simplified LC resonant circuit test facility was used for SLF breaking test. During test, Test current was measured by Rogwski coil and arc voltage was measured by voltage divider. Arc conductance was calculated by using these test results before 200ns at current zero. Critical arc conductance value at rated voltage 145kV class is about 2.3mS regardless of breaking current magnitude and arc conductance value at rated voltage 170kV class is about 2.6mS.

• Journal of Electrical Engineering and Technology
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• 제8권2호
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• pp.354-358
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• 2013

This paper discusses the analysis of arc conductance in a gas circuit breaker (GCB) during current interruption process and the investigation method of the interruption capability. There are some limitations in the application of the computational fluid dynamics (CFD) for the implementation of an arc model around the current zero, despite the fact that it gives good results for the high-current phase arc. In this study, we improved the accuracy in the analysis of the interruption performance by attempting the method using CFD and a mathematical arc model. The arc conductance at 200 ns before current zero (G-200ns) is selected as the indicator to predict the current interruption of the Short Line Fault (SLF). Finally, the proposed method is verified by applying to the actual circuit breakers which have different interruption performances.

• 한국지능시스템학회논문지
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• 제11권4호
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• pp.325-330
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• 2001

최적화문제에 사용되는 신경회로망을 회로레벨에서 시뮬레이션을 해보면, 알고리즘레벨에서 시뮬레이션한 결과와 많이 다름을 체험한다. 즉, 이런 신경회로망의 출력값들은 시간이 흐름에 따라 점근적으로 수렴하나, 입력단의 값들은 입력단에 부수적으로 연결되어 있는 컨덕턴스의 값에 따라 수렴여부도 달라지고, 또한 시스템의 성능도 변함을 안다. 이 논문에서는 입력단에 시스템의 안정도를 위해 부수적으로 연결된 컨덕턴스의 값에 따라 시스템의 수렴여부를 입력단과 출력단에서 분석하였으며, 에너지함수의 수렴점들이 이들 컨덕턴스의 값에 따라 성분이 변함을 분석하였다.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.184-190
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• 2009

One of the purposes of arc control is to change its state to the diffuse state before current zero as soon as possible. This can provide optimal conditions for full extinction of arc by minimizing the quantity of residual plasma between contacts near current zero. TRV(transient recovery voltage) occurs at current zero at the same time with current interruption. If there is substantial residual plasma near current zero it can cause 'post arc current' by the interaction of its conductance with TRV. In this paper, arc control ability as a function of configuration of spiral type VI contacts was compared on the criteria of the time taken for arc to reach to the diffuse state.

• 대한전기학회논문지
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• 제40권1호
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• pp.18-23
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• 1991

Recently SLAMECKA suggested the mathematical dynamic arc model of the SF6 gas circuit breaker [1]. The author applied the above dynamic arc model to the E.H.V. transmission line and investigated the interrupting capability of the SF6 gas circuit breaker. In particular the Runge-Kutta-England numerical method suitable for the use in systems that involve nonlinear dynamic arc and traveling wave was used by converting the current source into the voltage source in the DOMMEL's method [2]. The successful computer resultls were obtained and it was found that the arc time constant and the second derivative of the arc conductance are closely related to the interrupting capability of the SF6 gas circuit breaker.

• 한국재료학회지
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• 제19권9호
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• pp.488-493
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• 2009

Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical and electrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamber during the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by the purification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for the chemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film to be $\sim$50 nm. Optical absorption coefficient due to Beer-Lambert is estimated to be $7.1{\times}10^{-2}nm^{-1}$. The film thickness for 80% transparency is about 32 nm, and the sheet resistance is 242$\Omega$/sq. The authors also confirmed the relation between electrical conductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.

• Journal of Korean Vacuum Science & Technology
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• 제7권1호
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• pp.1-7
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• 2003

The pressure distributions in the test stand built for developing KSTAR NBI ion sources were obtained using a network system composed of conductance elements modeling the ion source, the neutralizer, and other beam line components. The allowable regime was defined on the coordinates of the gas supply rate to the ion source and the neutralizer, considering the proper conditions of the three critical parameters, the ion source pressure for good arc discharge, the pressure integral in the neutralizer for sufficient neutralization, and the chamber pressure for minimum neutral beam loss. The neutral beam evolution along the path from the ion source extraction grid to the calorimeter through the neutralizer, the bending magnet and the vacuum chamber was estimated for typical pressure distributions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.209-209
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• 2000

Carbon nanotubes have been intensively investigated for its fundamental and technical importances. Structural diversities and the related diverse physical properties with large aspect ratios are fascinating, For instance carbon nanotubes are metal and semiconductors depending on its chirality and furthermore the band gap can be tailored by the diamters. Several issues on its fundamental properties have been discussed. We will review some fundamental problems for band structures, molecular quantum wires, homojunctions, single electron tunneling, and quantum conductance. Several issues related to syntheis of carbon nanotubes including arc discharge, chemical vapor deposition, laser ablation will be extentively discussed. We will further review the applicability of carbon nanotubes on resonator, nanobalance, FET-type transistor, field emission displays electrode for secondary battery and hydrogen storage.