• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.328-332
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• 2010

The SLF(Short Line Fault) breaking capability test for high voltage class $SF_6$ GCB(Gas Circuit Breaker) was conducted. Simplified LC resonant circuit test facility was used for SLF breaking test. During test, Test current was measured by Rogwski coil and arc voltage was measured by voltage divider. Arc conductance was calculated by using these test results before 200ns at current zero. Critical arc conductance value at rated voltage 145kV class is about 2.3mS regardless of breaking current magnitude and arc conductance value at rated voltage 170kV class is about 2.6mS.

• Journal of Electrical Engineering and Technology
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• v.8 no.2
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• pp.354-358
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• 2013

This paper discusses the analysis of arc conductance in a gas circuit breaker (GCB) during current interruption process and the investigation method of the interruption capability. There are some limitations in the application of the computational fluid dynamics (CFD) for the implementation of an arc model around the current zero, despite the fact that it gives good results for the high-current phase arc. In this study, we improved the accuracy in the analysis of the interruption performance by attempting the method using CFD and a mathematical arc model. The arc conductance at 200 ns before current zero (G-200ns) is selected as the indicator to predict the current interruption of the Short Line Fault (SLF). Finally, the proposed method is verified by applying to the actual circuit breakers which have different interruption performances.

• Journal of the Korean Institute of Intelligent Systems
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• v.11 no.4
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• pp.325-330
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• 2001

It has been realized that the results of circuit level simulation of neural networks, used for optimization problems, arc much different from those of algorism level simulation. In other words, the outputs converges asymptotically as time elapes, however, the input convergence depends on the value of parasitic conductance connected between input node and ground. Also, this conductance affects system performance. This paper discusses the influence of input conductance on the convergece of the continuous Hopfield neural networks. The convergence has been analyzed for the input and output nodes of neurons. Also, the characteristics of equilibrium points has been analyzed depending on different values of the input conductance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.184-190
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• 2009

One of the purposes of arc control is to change its state to the diffuse state before current zero as soon as possible. This can provide optimal conditions for full extinction of arc by minimizing the quantity of residual plasma between contacts near current zero. TRV(transient recovery voltage) occurs at current zero at the same time with current interruption. If there is substantial residual plasma near current zero it can cause 'post arc current' by the interaction of its conductance with TRV. In this paper, arc control ability as a function of configuration of spiral type VI contacts was compared on the criteria of the time taken for arc to reach to the diffuse state.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.1
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• pp.18-23
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• 1991

Recently SLAMECKA suggested the mathematical dynamic arc model of the SF6 gas circuit breaker [1]. The author applied the above dynamic arc model to the E.H.V. transmission line and investigated the interrupting capability of the SF6 gas circuit breaker. In particular the Runge-Kutta-England numerical method suitable for the use in systems that involve nonlinear dynamic arc and traveling wave was used by converting the current source into the voltage source in the DOMMEL's method [2]. The successful computer resultls were obtained and it was found that the arc time constant and the second derivative of the arc conductance are closely related to the interrupting capability of the SF6 gas circuit breaker.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.488-493
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• 2009

Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical and electrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamber during the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by the purification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for the chemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film to be $\sim$50 nm. Optical absorption coefficient due to Beer-Lambert is estimated to be $7.1{\times}10^{-2}nm^{-1}$. The film thickness for 80% transparency is about 32 nm, and the sheet resistance is 242$\Omega$/sq. The authors also confirmed the relation between electrical conductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.1
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• pp.1-7
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• 2003

The pressure distributions in the test stand built for developing KSTAR NBI ion sources were obtained using a network system composed of conductance elements modeling the ion source, the neutralizer, and other beam line components. The allowable regime was defined on the coordinates of the gas supply rate to the ion source and the neutralizer, considering the proper conditions of the three critical parameters, the ion source pressure for good arc discharge, the pressure integral in the neutralizer for sufficient neutralization, and the chamber pressure for minimum neutral beam loss. The neutral beam evolution along the path from the ion source extraction grid to the calorimeter through the neutralizer, the bending magnet and the vacuum chamber was estimated for typical pressure distributions.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.209-209
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• 2000

Carbon nanotubes have been intensively investigated for its fundamental and technical importances. Structural diversities and the related diverse physical properties with large aspect ratios are fascinating, For instance carbon nanotubes are metal and semiconductors depending on its chirality and furthermore the band gap can be tailored by the diamters. Several issues on its fundamental properties have been discussed. We will review some fundamental problems for band structures, molecular quantum wires, homojunctions, single electron tunneling, and quantum conductance. Several issues related to syntheis of carbon nanotubes including arc discharge, chemical vapor deposition, laser ablation will be extentively discussed. We will further review the applicability of carbon nanotubes on resonator, nanobalance, FET-type transistor, field emission displays electrode for secondary battery and hydrogen storage.